Invention Grant
- Patent Title: Magnetoresistance effect device
-
Application No.: US16204502Application Date: 2018-11-29
-
Publication No.: US10559412B2Publication Date: 2020-02-11
- Inventor: Akimasa Kaizu , Naomichi Degawa , Tetsuya Roppongi
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2017-235229 20171207; JP2018-150429 20180809
- Main IPC: H01F10/32
- IPC: H01F10/32 ; H01L43/02 ; H03H11/04 ; H03B15/00 ; H03H11/16 ; H03F15/00 ; H01L27/22 ; H03H2/00 ; G01R33/09 ; H01L43/10

Abstract:
At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.
Public/Granted literature
- US20190180901A1 MAGNETORESISTANCE EFFECT DEVICE Public/Granted day:2019-06-13
Information query