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17 条记录 (耗时 0.018 秒)

    Method for producing electricity using inductive electromagnetic force of power generation coil
    1.
    发明授权
    Method for producing electricity using inductive electromagnetic force of power generation coil 有权

    公开(公告)号：US11515082B2

    公开(公告)日：2022-11-29

    申请号：US16607090

    申请日：2018-04-25

    申请人： Sun Mi Park

    发明人： Sun Mi Park

    IPC分类号： H01F27/38 ,  H01F3/10 ,  H01F30/06

    摘要： The present invention is directed to a method for producing induced electricity which prevents a collision by guiding induced electromagnetic force generated from a power generation coil as electricity is produced in the power generation coil to a predetermined location deviating from the path of power generation magnetic force which proceeds to be interlinked with the power generation coil to thus prevent power generation resistance from occurring and also produces electricity by interlinking the induced electromagnetic force with the power generation coil. The present invention is also directed to a “method for producing electricity using the induced electromagnetic force of a power generation coil” which uses an energy source for the production of electricity without conversion, so that there are no loss of energy during an energy conversion process and maintenance and management are easy, thereby reducing costs.

    Cooperative reception diversity apparatus and method based on signal point rearrangement or superposition modulation in relay system
    2.
    发明授权
    Cooperative reception diversity apparatus and method based on signal point rearrangement or superposition modulation in relay system 失效
    基于中继系统信号点重排或叠加调制的协同接收分集装置及方法

    公开(公告)号：US08577284B2

    公开(公告)日：2013-11-05

    申请号：US12921905

    申请日：2008-12-31

    申请人： Bangwon Seo ,  Heesoo Lee ,  Jae Young Ahn ,  Chung Gu Kang ,  Hyun Seok Ryu ,  Sun Mi Park

    发明人： Bangwon Seo ,  Heesoo Lee ,  Jae Young Ahn ,  Chung Gu Kang ,  Hyun Seok Ryu ,  Sun Mi Park

    IPC分类号： H04B7/15 ,  H04B3/36 ,  H04B7/14

    CPC分类号： H04B7/022 ,  H04B7/026 ,  H04B7/15592 ,  H04L1/0045 ,  H04L2001/0097

    摘要： A method and apparatus for method for providing cooperative reception diversity based on signal point rearrangement and superposition modulation performed at a relay station is discussed. A first technique performs superposition modulation at a relay station and a second technique employs signal point rearrangement at a relay station. The superposition modulation is a different type of superposition modulation than that employed by the transmitter of the signal. Similarly, the signal point rearrangement is a different type of signal point rearrangement than that employed by the transmitter of the signal. As a result of the superposition modulation or signal point rearrangement performed by the relay station, the reliability of a signal received by a reception unit at the destination receiver is improved.

    摘要翻译： 讨论了一种基于在中继站执行的信号点重排和叠加调制提供协同接收分集的方法和装置。 第一技术在中继站进行叠加调制，第二技术在中继站采用信号点重排。 叠加调制是与信号发射机采用的叠加调制不同的叠加调制方式。 类似地，信号点重排是与信号的发射机采用的不同类型的信号点重排。 作为由中继站执行的叠加调制或信号点重排的结果，改善了由目的地接收机处的接收单元接收的信号的可靠性。

    Nonvolatile memory device and method of manufacturing the same
    3.
    发明授权
    Nonvolatile memory device and method of manufacturing the same 失效
    非易失性存储器件及其制造方法

    公开(公告)号：US08362619B2

    公开(公告)日：2013-01-29

    申请号：US12773259

    申请日：2010-05-04

    申请人： Sun Mi Park

    发明人： Sun Mi Park

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76897 ,  H01L21/76816 ,  H01L27/11524 ,  H01L29/66636 ,  H01L29/66659

    摘要： A nonvolatile memory device comprises a semiconductor substrate comprising alternating, parallel active regions and isolation regions; first and second selection lines intersecting the active regions and the isolation regions; first junctions formed in the active regions between the first and second selection lines; spacers formed on sidewalls of the first and second selection lines; second junctions deeper than the first junctions formed in the first junctions, respectively; contact plugs coupled to one side of the respective second junctions; and dummy plugs coupled second sides of the respective second junctions.

    摘要翻译： 非易失性存储器件包括半导体衬底，其包括交替的，平行的有源区和隔离区; 第一和第二选择线与有源区和隔离区相交; 在第一和第二选择线之间的有源区域中形成的第一结; 间隔物形成在第一和第二选择线的侧壁上; 分别比在第一交汇点形成的第一交汇点更深的第二交汇点; 耦合到相应的第二结的一侧的接触插塞; 并且虚拟插头耦合在相应的第二结的第二侧。

    Semiconductor Device
    4.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20120294082A1

    公开(公告)日：2012-11-22

    申请号：US13545389

    申请日：2012-07-10

    申请人： Sun Mi Park

    发明人： Sun Mi Park

    IPC分类号： G11C11/34

    CPC分类号： G11C16/08 ,  G11C16/16 ,  H01L27/11526 ,  H01L27/11534 ,  H01L29/402 ,  H01L29/41775 ,  H01L29/66659 ,  H01L29/78

    摘要： A semiconductor device comprises a transistor comprising a gate, a source, a drain, and a gate insulating layer, and an auxiliary line formed over the drain and electrically insulated from the drain. During a turn-off operation of the transistor, voltage to increase a resistance of the drain is supplied to the auxiliary line.

    摘要翻译： 半导体器件包括晶体管，其包括栅极，源极，漏极和栅极绝缘层，以及形成在漏极上并与漏极电绝缘的辅助线。 在晶体管的关断操作期间，向辅助线路提供用于增加漏极电阻的电压。

    METHOD OF MANUFACTURING FLASH MEMORY DEVICE
    5.
    发明申请
    METHOD OF MANUFACTURING FLASH MEMORY DEVICE 失效
    制造闪存存储器件的方法

    公开(公告)号：US20070207580A1

    公开(公告)日：2007-09-06

    申请号：US11618702

    申请日：2006-12-29

    申请人： Sun Mi Park ,  Yoo Nam Jeon ,  Nam Kyeong Kim ,  Se Jun Kim

    发明人： Sun Mi Park ,  Yoo Nam Jeon ,  Nam Kyeong Kim ,  Se Jun Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L27/115 ,  H01L21/76849 ,  H01L21/76877 ,  H01L27/11521

    摘要： A method of manufacturing a flash memory device includes etching an insulating layer provided over a substrate to form a contact hole to define a contact hole exposing a junction region formed on the substrate. The contact hole is filled with a first conductive material, the first conductive material contacting the junction region and extending above an upper surface of the contact hole. The first conductive material is etched to partly fill the contact hole, so that the first conductive material fills a lower portion of the contact hole, wherein an upper portion of the contact hole remains not filled due to the etching of the first conductive material, wherein the etched first conductive material defines a contact plug. A first dielectric layer and a second dielectric layer are formed over the contact plug, thereby filling the upper portion of the contact hole. Part of the first and second dielectric layers is etched to expose the contact plug and the upper portion of the contact hole. A second conductive material is formed on the contact plug and filling the upper portion of the contact hole to form a bit line.

    摘要翻译： 制造闪速存储器件的方法包括蚀刻设置在衬底上的绝缘层以形成接触孔，以限定暴露形成在衬底上的接合区域的接触孔。 接触孔填充有第一导电材料，第一导电材料接触接合区并在接触孔的上表面上方延伸。 第一导电材料被蚀刻以部分地填充接触孔，使得第一导电材料填充接触孔的下部，其中接触孔的上部部分由于蚀刻第一导电材料而保持未填充，其中 蚀刻的第一导电材料限定接触插塞。 第一电介质层和第二电介质层形成在接触插塞上，从而填充接触孔的上部。 蚀刻第一和第二电介质层的一部分以暴露接触插塞和接触孔的上部。 第二导电材料形成在接触插塞上并填充接触孔的上部以形成位线。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08338883B2

    公开(公告)日：2012-12-25

    申请号：US12872888

    申请日：2010-08-31

    申请人： Sun Mi Park

    发明人： Sun Mi Park

    IPC分类号： H01L29/792

    CPC分类号： G11C16/08 ,  G11C16/16 ,  H01L27/11526 ,  H01L27/11534 ,  H01L29/402 ,  H01L29/41775 ,  H01L29/66659 ,  H01L29/78

    摘要： A semiconductor device comprises a transistor comprising a gate, a source, a drain, and a gate insulating layer, and an auxiliary line formed over the drain and electrically insulated from the drain. During a turn-off operation of the transistor, voltage to increase a resistance of the drain is supplied to the auxiliary line.

    摘要翻译： 半导体器件包括晶体管，其包括栅极，源极，漏极和栅极绝缘层，以及形成在漏极上并与漏极电绝缘的辅助线。 在晶体管的关断操作期间，向辅助线路提供用于增加漏极电阻的电压。

    Semiconductor Device
    10.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20110051516A1

    公开(公告)日：2011-03-03

    申请号：US12872888

    申请日：2010-08-31

    申请人： Sun Mi Park

    发明人： Sun Mi Park

    IPC分类号： G11C16/04 ,  H01L29/792

    CPC分类号： G11C16/08 ,  G11C16/16 ,  H01L27/11526 ,  H01L27/11534 ,  H01L29/402 ,  H01L29/41775 ,  H01L29/66659 ,  H01L29/78

    摘要： A semiconductor device comprises a transistor comprising a gate, a source, a drain, and a gate insulating layer, and an auxiliary line formed over the drain and electrically insulated from the drain. During a turn-off operation of the transistor, voltage to increase a resistance of the drain is supplied to the auxiliary line.

    摘要翻译： 半导体器件包括晶体管，其包括栅极，源极，漏极和栅极绝缘层，以及形成在漏极上并与漏极电绝缘的辅助线。 在晶体管的关断操作期间，向辅助线路提供用于增加漏极电阻的电压。