公开(公告)号：US20140191386A1

公开(公告)日：2014-07-10

申请号：US13894716

申请日：2013-05-15

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Mei-Chin Lee ,  Wang-Ting Chen ,  Chi-Tung Yeh ,  Chun-Tang Lin ,  Yi-Che Lai

IPC: H01L21/48 ,  H01L23/373

CPC classification number: H01L23/3738 ,  H01L23/367 ,  H01L23/42 ,  H01L23/49833 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00

Abstract: A semiconductor package is provided. The semiconductor package includes a substrate; a semiconductor element having opposite active and inactive surfaces and disposed on the substrate via the active surface thereof, wherein the inactive surface of the semiconductor element is roughened; a thermally conductive layer bonded to the inactive surface of the semiconductor element; and a heat sink disposed on the thermally conductive layer. The roughened inactive surface facilitates the bonding between the semiconductor element and the thermally conductive layer so as to eliminate the need to perform a gold coating process and the use of a flux and consequently reduce the formation of voids in the thermally conductive layer.

Abstract translation: 提供半导体封装。 半导体封装包括衬底; 半导体元件具有相反的有源和非活性表面，并经由其活性表面设置在衬底上，其中半导体元件的非活性表面被粗糙化; 接合到半导体元件的非活性表面的导热层; 以及布置在导热层上的散热器。 粗糙化的非活性表面促进了半导体元件和导热层之间的结合，从而消除了执行镀金工艺和使用焊剂的需要，从而减少导热层中空隙的形成。

公开(公告)号：US09147668B2

公开(公告)日：2015-09-29

申请号：US14074165

申请日：2013-11-07

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Chi-Tung Yeh ,  Chun-Tang Lin

IPC: H01L23/00

CPC classification number: H01L24/82 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/01 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L24/94 ,  H01L24/95 ,  H01L24/97 ,  H01L24/98 ,  H01L2221/68318 ,  H01L2221/68331 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81801 ,  H01L2224/83005 ,  H01L2224/831 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83

Abstract: A method for fabricating a semiconductor structure is disclosed. First, an interposer is disposed on a carrier. The carrier has a base body and a bonding layer bonded to the base body. The interposer has opposite first and second sides and the first side has a plurality of conductive elements. The interposer is disposed on the carrier with the first side bonded to the bonding layer and the conductive elements embedded in the bonding layer. Then, at least a semiconductor element is disposed on the second side of the interposer. As such, the semiconductor element and the interposer form a semiconductor structure. Since the conductive elements are embedded in the bonding layer instead of the base body, the present invention eliminates the need to form concave portions in the base body for receiving the conductive elements. Therefore, the method of the present invention is applicable to interposers of different specifications.

Abstract translation: 公开了一种制造半导体结构的方法。 首先，将载体放置在载体上。 载体具有结合到基体的基体和结合层。 插入器具有相对的第一和第二侧，并且第一侧具有多个导电元件。 插入器设置在载体上，其第一面接合到接合层，并且导电元件嵌入在接合层中。 然后，至少一个半导体元件设置在插入件的第二侧上。 因此，半导体元件和插入件形成半导体结构。 由于导电元件被嵌入接合层而不是基体中，所以本发明不需要在基体中形成用于接收导电元件的凹部。 因此，本发明的方法可应用于不同规格的插入件。

公开(公告)号：US20150064850A1

公开(公告)日：2015-03-05

申请号：US14074165

申请日：2013-11-07

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Chi-Tung Yeh ,  Chun-Tang Lin

IPC: H01L23/00

CPC classification number: H01L24/82 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/01 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L24/94 ,  H01L24/95 ,  H01L24/97 ,  H01L24/98 ,  H01L2221/68318 ,  H01L2221/68331 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81801 ,  H01L2224/83005 ,  H01L2224/831 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83

Abstract: A method for fabricating a semiconductor structure is disclosed. First, an interposer is disposed on a carrier. The carrier has a base body and a bonding layer bonded to the base body. The interposer has opposite first and second sides and the first side has a plurality of conductive elements. The interposer is disposed on the carrier with the first side bonded to the bonding layer and the conductive elements embedded in the bonding layer. Then, at least a semiconductor element is disposed on the second side of the interposer. As such, the semiconductor element and the interposer form a semiconductor structure. Since the conductive elements are embedded in the bonding layer instead of the base body, the present invention eliminates the need to form concave portions in the base body for receiving the conductive elements. Therefore, the method of the present invention is applicable to interposers of different specifications.

Abstract translation: 公开了一种制造半导体结构的方法。 首先，将载体放置在载体上。 载体具有结合到基体的基体和结合层。 插入器具有相对的第一和第二侧，并且第一侧具有多个导电元件。 插入器设置在载体上，其第一面接合到接合层，并且导电元件嵌入在接合层中。 然后，至少一个半导体元件设置在插入件的第二侧上。 因此，半导体元件和插入件形成半导体结构。 由于导电元件被嵌入接合层而不是基体中，所以本发明不需要在基体中形成用于接收导电元件的凹部。 因此，本发明的方法可应用于不同规格的插入件。