Invention Application
- Patent Title: METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE
- Patent Title (中): 制造半导体结构的方法
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Application No.: US14074165Application Date: 2013-11-07
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Publication No.: US20150064850A1Publication Date: 2015-03-05
- Inventor: Chi-Tung Yeh , Chun-Tang Lin
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- Current Assignee: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- Current Assignee Address: TW Taichung
- Priority: TW102131767 20130904
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A method for fabricating a semiconductor structure is disclosed. First, an interposer is disposed on a carrier. The carrier has a base body and a bonding layer bonded to the base body. The interposer has opposite first and second sides and the first side has a plurality of conductive elements. The interposer is disposed on the carrier with the first side bonded to the bonding layer and the conductive elements embedded in the bonding layer. Then, at least a semiconductor element is disposed on the second side of the interposer. As such, the semiconductor element and the interposer form a semiconductor structure. Since the conductive elements are embedded in the bonding layer instead of the base body, the present invention eliminates the need to form concave portions in the base body for receiving the conductive elements. Therefore, the method of the present invention is applicable to interposers of different specifications.
Public/Granted literature
- US09147668B2 Method for fabricating semiconductor structure Public/Granted day:2015-09-29
Information query
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