公开(公告)号：US20250155810A1

公开(公告)日：2025-05-15

申请号：US18929891

申请日：2024-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiyup KIM ,  Beomgoo KANG ,  Songse YI ,  Dabin KIM ,  Woojae JANG

IPC: G03F7/039 ,  C08F212/14 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027

Abstract: A photosensitive polymer may include repeating units represented by Formula 1 and may have a polydispersity index (PDI) of 1.1 or less.
In Formula 1, R1, R2, R3, R4, R5, R6, R7, and R8 each independently may be a hydrogen atom, a C1-C3 linear or branched alkyl group, a substituted or unsubstituted C2-C3 linear or branched alkenyl group, a substituted or unsubstituted C2-C3 linear or branched alkynyl group, a substituted or unsubstituted C1-C3 alkoxy group, or a halogen element; A may be an acid-labile group having an acid desorption rate lower than that of a trialkylsilyl group; and m and n each may be an integer of 1 or more.

公开(公告)号：US20240282377A1

公开(公告)日：2024-08-22

申请号：US18441331

申请日：2024-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chaehyeon LIM ,  Woojae JANG ,  Sejun PARK ,  Yujeong SEO ,  Jaeduk LEE

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/32

CPC classification number: G11C16/08 ,  G11C16/0433 ,  G11C16/32

Abstract: Provided is an operating method of a nonvolatile memory device including a plurality of cell strings, each cell string of the plurality of cell strings including a plurality of memory cells, connected between a bit line and a common source line, and vertical holes penetrating a plurality of word lines stacked in a direction perpendicular to a substrate, the operating method including applying a word line voltage to the plurality of word lines, classifying the plurality of word lines into a plurality of regions, each region of the plurality of regions including at least one of the word lines, and recovering voltages of the plurality of word lines by recovering voltages of word lines arranged in a central region among the plurality of regions before recovering voltages of word lines in other regions of the plurality of regions.

公开(公告)号：US20240258347A1

公开(公告)日：2024-08-01

申请号：US18524723

申请日：2023-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungjun PARK ,  Jieun KIM ,  Woojae JANG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14645 ,  H01L27/14621

Abstract: An image sensor may include a first semiconductor chip including a pixel area and a peripheral area, the pixel area including a plurality of pixels, and a second semiconductor chip coupled to a lower surface of the first semiconductor chip, the second semiconductor chip including a plurality of logic elements, the pixel area including a plurality of color filters and a fence in the pixel area, the plurality of color filters corresponding to the plurality of pixels, the fence having a grid pattern, and each of the color filters of the plurality of color filters separated from each other by the fence, the peripheral area including a shield area and a shield outer area, the shield area surrounding the pixel area, and a fence insulating layer included in the shield outer area, the fence insulating layer including a same material as the fence.

公开(公告)号：US20240161842A1

公开(公告)日：2024-05-16

申请号：US18338857

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonam KIM ,  Sejun PARK ,  Kangin SHIN ,  Changhwan SHIN ,  Hyeji LEE ,  Woojae JANG

IPC: G11C16/34 ,  G11C16/10

CPC classification number: G11C16/3459 ,  G11C16/102

Abstract: Provided is a memory device with improved threshold voltage distribution and an operating method of the memory device. The memory device includes a memory cell array including a plurality of memory cells, a voltage generator configured to generate a program voltage and a verification voltage applied to the plurality of memory cells during a data write operation, and a control logic configured to control multiple program loops to program the memory cells to multiple program states during the data write operation and configured to determine whether programming passes or fails in the multiple program loops, wherein the control logic controls the program loops to verify one or more (n+1)-th memory cells to be programmed to an (n+1)-th program state by using a verify condition for verifying an n-th program state in at least one of the multiple program loops (n is an integer greater than or equal to 1).

公开(公告)号：US20230307062A1

公开(公告)日：2023-09-28

申请号：US18326606

申请日：2023-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyeong GWAK ,  Raeyoung LEE ,  Jinkyu KANG ,  Sejun PARK ,  Changhwan SHIN ,  Jaeduk LEE ,  Woojae JANG

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/34 ,  G11C7/10 ,  G11C16/24 ,  G11C16/08

CPC classification number: G11C16/16 ,  G11C16/26 ,  G11C16/349 ,  G11C7/1087 ,  G11C16/24 ,  G11C7/106 ,  G11C16/08

Abstract: An operating method of a storage device includes reading a wear-out pattern of a memory block when a controller determines the memory block is a re-use memory block of a non-volatile memory device; selecting an operation mode corresponding to the read wear-out pattern using the controller; and transmitting the selected operation mode to the non-volatile memory device using the controller.