公开(公告)号：US20240412407A1

公开(公告)日：2024-12-12

申请号：US18437115

申请日：2024-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghee Cho ,  Yunje Cho ,  Kwangrak Kim ,  Jonghyeok Park

IPC: G06T7/73 ,  G06T7/00 ,  G06T7/246 ,  G06T7/60 ,  H01J37/09 ,  H01J37/10 ,  H01J37/153 ,  H01J37/22 ,  H01L21/68

Abstract: A semiconductor manufacturing device includes an electron beam source emitting; a plurality of condenser lenses disposed between a stage on which an object including structures is seated and the electron beam source; an objective lens disposed between the plurality of condenser lenses and the stage; an aperture disposed between the plurality of condenser lenses; and a controller configured to acquire a plurality of original images according to a working distance between the objective lens and the object, acquire a pattern image indicating the structures from the plurality of original images, a plurality of kernel images indicating distribution of an electron beam on the object, and a plurality of position vectors indicating a relative position of the structures in the plurality of kernel images, and adjust a position of the aperture based on a motion vector indicating movement of the plurality of position vectors according to the working distance.

公开(公告)号：US09793000B2

公开(公告)日：2017-10-17

申请号：US14736683

申请日：2015-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwoon Park ,  Junghee Cho ,  Su-Jin Kim

IPC: G11C16/06 ,  G11C16/34 ,  G11C16/10

CPC classification number: G11C16/349 ,  G11C16/10

Abstract: A nonvolatile memory includes a memory cell array including a plurality of memory cells, a pad configured to be connected to a data input/output line, and an input/output circuit configured to receive data to be programmed in the memory cell array and to transmit data read from the memory cell array. The nonvolatile memory further includes a switch configured to couple and decouple the pad and the input/output circuit responsive to a switch control signal and a control circuit configured to generate the switch control signal responsive to a chip enable signal. Data storage devices and methods using such nonvolatile memories are also described.

公开(公告)号：US20150380090A1

公开(公告)日：2015-12-31

申请号：US14736683

申请日：2015-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwoon Park ,  Junghee Cho ,  Su-Jin Kim

IPC: G11C16/08

CPC classification number: G11C16/349 ,  G11C16/10

Abstract: A nonvolatile memory includes a memory cell array including a plurality of memory cells, a pad configured to be connected to a data input/output line, and an input/output circuit configured to receive data to be programmed in the memory cell array and to transmit data read from the memory cell array. The nonvolatile memory further includes a switch configured to couple and decouple the pad and the input/output circuit responsive to a switch control signal and a control circuit configured to generate the switch control signal responsive to a chip enable signal. Data storage devices and methods using such nonvolatile memories are also described.

Abstract translation: 非易失性存储器包括包括多个存储单元的存储单元阵列，被配置为连接到数据输入/输出线的衬垫以及被配置为接收要在存储器单元阵列中被编程的数据并且发送的输入/输出电路 从存储单元阵列读取的数据。 非易失性存储器还包括开关，其被配置为响应于开关控制信号耦合和去耦合焊盘和输入/输出电路，以及控制电路，被配置为响应芯片使能信号产生开关控制信号。 还描述了使用这种非易失性存储器的数据存储装置和方法。