Invention Grant
- Patent Title: Nonvolatile memories having data input/output switches for reducing parasitic capacitance of bus channel
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Application No.: US14736683Application Date: 2015-06-11
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Publication No.: US09793000B2Publication Date: 2017-10-17
- Inventor: Jiwoon Park , Junghee Cho , Su-Jin Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2014-0079064 20140626
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/34 ; G11C16/10

Abstract:
A nonvolatile memory includes a memory cell array including a plurality of memory cells, a pad configured to be connected to a data input/output line, and an input/output circuit configured to receive data to be programmed in the memory cell array and to transmit data read from the memory cell array. The nonvolatile memory further includes a switch configured to couple and decouple the pad and the input/output circuit responsive to a switch control signal and a control circuit configured to generate the switch control signal responsive to a chip enable signal. Data storage devices and methods using such nonvolatile memories are also described.
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