公开(公告)号：US09142461B2

公开(公告)日：2015-09-22

申请号：US14289076

申请日：2014-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho Do ,  Hajin Lim ,  WeonHong Kim ,  Kyungil Hong ,  Moonkyun Song

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28

CPC classification number: H01L21/823462 ,  H01L21/26506 ,  H01L21/28185 ,  H01L21/2822 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: A substrate including an NMOS transistor region and a PMOS transistor region is prepared. A silicon-germanium layer is formed on the PMOS transistor region. Nitrogen atoms are injected in an upper portion of the silicon-germanium layer. A first gate dielectric layer is formed on the NMOS transistor region and the PMOS transistor region. The nitrogen atoms are injected into the upper portion of the silicon-germanium layer before forming the first gate dielectric layer.

Abstract translation: 准备包括NMOS晶体管区域和PMOS晶体管区域的衬底。 在PMOS晶体管区域上形成硅 - 锗层。 氮原子注入硅 - 锗层的上部。 在NMOS晶体管区域和PMOS晶体管区域上形成第一栅极电介质层。 在形成第一栅极电介质层之前，将氮原子注入硅 - 锗层的上部。

公开(公告)号：US08912611B2

公开(公告)日：2014-12-16

申请号：US14190346

申请日：2014-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： WeonHong Kim ,  Dae-Kwon Joo ,  Hajin Lim ,  Jinho Do ,  Kyungil Hong ,  Moonkyun Song

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/28 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/512 ,  H01L21/28202 ,  H01L21/28255 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/1054 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

Abstract: A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer.

Abstract translation: 制造半导体器件的方法包括在半导体层上形成下界面层，下界面层为氮化物层，在下界面层上形成中间界面层，中间界面层为氧化物层，形成 中间界面层上的高k电介质层。 高k电介质层的介电常数高于下界面层和中间界面层的介电常数。