公开(公告)号：US20200168720A1

公开(公告)日：2020-05-28

申请号：US16552150

申请日：2019-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-young Kwak ,  Ji-ye Kim ,  Jung-hwan Chun ,  Min-chan Gwak ,  Dong-hyun Roh ,  Jin-wook Lee ,  Sang-jin Hyun

IPC: H01L29/66 ,  H01L27/11 ,  H01L27/092 ,  H01L29/45 ,  H01L29/78 ,  H01L21/8238

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

公开(公告)号：US11955531B2

公开(公告)日：2024-04-09

申请号：US18174902

申请日：2023-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-young Kwak ,  Ji-ye Kim ,  Jung-hwan Chun ,  Min-chan Gwak ,  Dong-hyun Roh ,  Jin-wook Lee ,  Sang-jin Hyun

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H10B10/00

CPC classification number: H01L29/66515 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/45 ,  H01L29/66795 ,  H01L29/7851 ,  H10B10/12

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

公开(公告)号：US11626503B2

公开(公告)日：2023-04-11

申请号：US17393217

申请日：2021-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-young Kwak ,  Ji-ye Kim ,  Jung-hwan Chun ,  Min-chan Gwak ,  Dong-hyun Roh ,  Jin-wook Lee ,  Sang-jin Hyun

IPC: H01L29/08 ,  H01L29/66 ,  H01L27/11 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/45

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

公开(公告)号：US11114544B2

公开(公告)日：2021-09-07

申请号：US16552150

申请日：2019-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-young Kwak ,  Ji-ye Kim ,  Jung-hwan Chun ,  Min-chan Gwak ,  Dong-hyun Roh ,  Jin-wook Lee ,  Sang-jin Hyun

IPC: H01L29/08 ,  H01L29/66 ,  H01L27/11 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/45

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.