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公开(公告)号：US11681219B2
公开(公告)日：2023-06-20
申请号：US16991281
申请日：2020-08-12
发明人： Yechan Kim , Su Min Kim , Ju-Young Kim , Jinjoo Kim , Hyunwoo Kim , Juhyeon Park , Hyunji Song , Songse Yi , Suk Koo Hong
IPC分类号： G03F7/004 , C08L35/00 , C07C381/12 , C08L25/06
CPC分类号： G03F7/0045 , C07C381/12 , C08L25/06 , C08L35/00
摘要： A resist composition including a polymer; and a compound represented by Formula 1,
in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,-
公开(公告)号：US12127396B2
公开(公告)日：2024-10-22
申请号：US17874512
申请日：2022-07-27
发明人： Hyunji Song , Jaehoon Kim , Kwangho Park , Yonghoon Son , Gyeonghee Lee , Seungjae Jung
IPC分类号： H10B12/00
CPC分类号： H10B12/373 , H10B12/0387
摘要： An integrated circuit device includes a plurality of semiconductor layers stacked on a substrate to overlap each other in a vertical direction and longitudinally extending along a first horizontal direction. The plurality of semiconductor layers may have different thicknesses in the vertical direction.
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公开(公告)号：US11751379B2
公开(公告)日：2023-09-05
申请号：US17731611
申请日：2022-04-28
发明人： Jae Hoon Kim , Kwang-Ho Park , Yong-Hoon Son , Hyunji Song , Gyeonghee Lee , Seungjae Jung
IPC分类号： G11C5/06 , H10B12/00 , G11C11/4097
CPC分类号： H10B12/30 , G11C11/4097
摘要： A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.
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公开(公告)号：US11462554B2
公开(公告)日：2022-10-04
申请号：US16857507
申请日：2020-04-24
发明人： Yong-Hoon Son , Jae Hoon Kim , Kwang-ho Park , Hyunji Song , Gyeonghee Lee , Seungjae Jung
IPC分类号： H01L27/11565 , H01L27/11573 , H01L27/1157 , H01L23/528 , H01L23/522 , H01L27/11582
摘要： A semiconductor memory device is disclosed. The device includes a peripheral circuit structure on a substrate, a semiconductor layer on the peripheral circuit structure, an electrode structure on the semiconductor layer, the electrode structure including electrodes stacked on the semiconductor layer, a vertical channel structure penetrating the electrode structure and being connected to the semiconductor layer, a separation structure penetrating the electrode structure, extending in a first direction, and horizontally dividing the electrode of the electrode structure into a pair of electrodes, an interlayered insulating layer covering the electrode structure, and a through contact penetrating the interlayered insulating layer and being electrically connected to the peripheral circuit structure.
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公开(公告)号：US11348924B2
公开(公告)日：2022-05-31
申请号：US16923572
申请日：2020-07-08
发明人： Jae Hoon Kim , Kwang-Ho Park , Yong-Hoon Son , Hyunji Song , Gyeonghee Lee , Seungjae Jung
IPC分类号： G11C5/06 , H01L27/108 , G11C11/4097
摘要： A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.
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公开(公告)号：US11662662B2
公开(公告)日：2023-05-30
申请号：US16994957
申请日：2020-08-17
发明人： Hyunji Song , Sukkoo Hong , Sumin Kim , Yechan Kim , Juyoung Kim , Jinjoo Kim , Hyunwoo Kim , Juhyeon Park , Songse Yi
IPC分类号： G03F7/004 , G03F7/039 , C07D213/68 , C07D263/32 , C07D233/64 , C07D277/26
CPC分类号： G03F7/0045 , C07D213/68 , C07D233/64 , C07D263/32 , C07D277/26 , G03F7/0392
摘要： A photo-decomposable compound, a photoresist composition, and a method of manufacturing an IC device, the compound generating acid upon exposure and acts as a quenching base that neutralizes acid in an unexposed state and being represented by Formula 1:
wherein, in Formula 1, Ra is a C5 to C40 substituted or unsubstituted cyclic hydrocarbon group including at least one nitrogen atom, Ya is a C1 to C20 divalent linear or cyclic hydrocarbon group, n is an integer of 1 to 5, and A+ is a counter ion.-
公开(公告)号：US11442274B2
公开(公告)日：2022-09-13
申请号：US17059374
申请日：2019-03-22
发明人： Hyunji Song , Wootaek Song , Taekyung Lee
IPC分类号： G02B27/01 , G06F3/0346 , A63F13/21 , A63F13/525
摘要： An electronic device according to various embodiments of the present disclosure includes one or more cameras having a designated field of view, a display, a communication circuitry and a processor wherein the processor is configured to identify an external electronic device among one or more external objects included in the designated field of view using the camera, display a graphic object corresponding to the external electronic device on the display based on first location information of the external electronic device identified based at least on the image information obtained using the camera, and when the external electronic device is out of the designated field of view, display the graphic object on the display based on second location information of the external electronic device identified using the camera before the external electronic device is out of the designated field of view and information related to the movement of the external electronic device received from the external electronic via the communication circuitry after the external electronic device is out of the designated field of view.
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公开(公告)号：US11437382B2
公开(公告)日：2022-09-06
申请号：US16916366
申请日：2020-06-30
发明人： Hyunji Song , Jaehoon Kim , Kwangho Park , Yonghoon Son , Gyeonghee Lee , Seungjae Jung
IPC分类号： H01L27/108
摘要： An integrated circuit device includes a plurality of semiconductor layers stacked on a substrate to overlap each other in a vertical direction and longitudinally extending along a first horizontal direction. The plurality of semiconductor layers may have different thicknesses in the vertical direction.
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