Invention Grant
- Patent Title: Integrated circuit device and method of manufacturing the same
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Application No.: US16916366Application Date: 2020-06-30
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Publication No.: US11437382B2Publication Date: 2022-09-06
- Inventor: Hyunji Song , Jaehoon Kim , Kwangho Park , Yonghoon Son , Gyeonghee Lee , Seungjae Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2019-0143655 20191111
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
An integrated circuit device includes a plurality of semiconductor layers stacked on a substrate to overlap each other in a vertical direction and longitudinally extending along a first horizontal direction. The plurality of semiconductor layers may have different thicknesses in the vertical direction.
Public/Granted literature
- US20210143156A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-05-13
Information query
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