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    Machine learning-based approach to demographic attribute inference using time-sensitive features
    1.
    发明授权
    Machine learning-based approach to demographic attribute inference using time-sensitive features 有权

    公开(公告)号：US11451875B2

    公开(公告)日：2022-09-20

    申请号：US16359684

    申请日：2019-03-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Woo Kim

    IPC: H04N21/482 ,  G06N20/00 ,  H04N21/475

    Abstract: A system and method for predicting user demographics based on a user's television, or media, viewing habits using machine learning algorithms is provided. A method of predicting a user's demographics comprises acquiring training data including one or more household data, person identification data, program title data, or watch time data. The method includes assessing a set of features. In addition, the method includes training one or more models based on the training data and set of features. The method includes acquiring viewing history data associated with at least one user. The method further includes determining one or more attributes associated with the at least one user based on inputting the viewing history data into the one or more models.

    Method of forming photoresist pattern and method of fabricating semiconductor device using the same
    2.
    发明授权
    Method of forming photoresist pattern and method of fabricating semiconductor device using the same 有权

    公开(公告)号：US10438810B2

    公开(公告)日：2019-10-08

    申请号：US15243128

    申请日：2016-08-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Cha-Won Koh ,  Cheol-Hong Park ,  Hyun-Woo Kim ,  Jin-Kyu Han

    IPC: H01L21/308 ,  B81C1/00 ,  H01L21/02

    Abstract: Example embodiments relate to a method of forming a photoresist pattern and a method of fabricating a semiconductor device using the same. The method of fabricating a semiconductor device comprises forming a mask layer on a substrate, forming a photoresist pattern on the mask layer, the photoresist pattern having pattern portions at a first height and recess portions, applying a first liquid onto the photoresist pattern, filling the recess portions with a pattern filler at a second height, the pattern filler having an higher etch rate than the etch rate of the pattern portions to the same etchant, removing the first liquid, etching the pattern filler after removing the first liquid, etching the mask layer via the photoresist pattern to form a mask pattern, and etching the substrate via the mask pattern to form a fine pattern.

    Methods of forming a pattern of a semiconductor device
    9.
    发明授权
    Methods of forming a pattern of a semiconductor device 有权
    形成半导体器件的图案的方法

    公开(公告)号：US09520289B2

    公开(公告)日：2016-12-13

    申请号：US14519813

    申请日：2014-10-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin Park ,  Cha-Won Koh ,  Hyun-Woo Kim

    IPC: G03F7/38 ,  H01L21/027 ,  G03F7/26 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/02

    CPC classification number: H01L21/0273 ,  G03F7/26 ,  G03F7/38 ,  H01L21/02164 ,  H01L21/02277 ,  H01L21/0337 ,  H01L21/31058

    Abstract: In a method of forming a pattern of a semiconductor device, a hard mask layer is formed on a substrate. A photoresist film is coated on the hard mask layer. The photoresist film is exposed and developed to form a first photoresist pattern. A smoothing process is performed on the first photoresist pattern to form a second photoresist pattern having a roughness property lower from that of the first photoresist pattern. In the smoothing process, a surface of the first photoresist pattern is treated with an organic solvent. An ALD layer is formed on a surface of the second photoresist pattern. The ALD layer is anisotropically etched to form an ALD layer pattern on a sidewall of the second photoresist pattern. The hard mask layer is etched using the second photoresist pattern and the ALD layer pattern as an etching mask to form a hard mask pattern.

    Abstract translation: 在形成半导体器件的图案的方法中，在衬底上形成硬掩模层。 将光致抗蚀剂膜涂覆在硬掩模层上。 光致抗蚀剂膜被曝光和显影以形成第一光致抗蚀剂图案。 在第一光致抗蚀剂图案上进行平滑化处理以形成具有比第一光致抗蚀剂图案低的粗糙度特性的第二光致抗蚀剂图案。 在平滑处理中，用有机溶剂处理第一光致抗蚀剂图案的表面。 在第二光致抗蚀剂图案的表面上形成ALD层。 ALD层被各向异性蚀刻以在第二光致抗蚀剂图案的侧壁上形成ALD层图案。 使用第二光致抗蚀剂图案和ALD层图案作为蚀刻掩模蚀刻硬掩模层以形成硬掩模图案。

    Resist top-coat composition and patterning process
    10.
    发明授权
    Resist top-coat composition and patterning process 有权
    抗顶层涂层组合和图案化工艺

    公开(公告)号：US09507262B2

    公开(公告)日：2016-11-29

    申请号：US14622291

    申请日：2015-02-13

    Applicant: Shin-Etsu Chemical Co., Ltd. ,  Samsung Electronics Co., Ltd.

    Inventor： Jun Hatakeyama ,  Hyun-Woo Kim

    IPC: G03F7/09 ,  G03F7/20 ,  G03F7/11

    CPC classification number: G03F7/091 ,  G03F7/11 ,  G03F7/2041

    Abstract: There are provided a top coat composition and a patterning process using that composition, which reduce the effect of contaminants in the surrounding atmosphere on the resist film in absorbing OOB light and in reducing film loss of the resist pattern and bridging between patterns, and also enhances the sensitivity of the resist film and suppresses the emission of outgas from the resist film. The resist top coat composition of the present invention is formed on a photoresist film formed on a wafer, and is used in a patterning process performed by lithography in which, after exposure, developing is performed. The resist top coat composition contains a polymer as a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group shown by the following general formula (1), a C6-C10 ether compound, and a C7-C12 hydrocarbon compound, and wherein m is 1 or 2, and p is in the range of 0

    Abstract translation: 提供了一种使用该组合物的面漆组合物和图案化工艺，其在吸收OOB光时降低了在抗蚀剂膜上的污染物在抗蚀剂膜上的影响并降低了抗蚀剂图案的膜损耗和图案之间的桥接，并且还增强了 抗蚀剂膜的灵敏度并抑制从抗蚀剂膜发出的气体。 本发明的抗蚀面漆组合物形成在形成在晶片上的光致抗蚀剂膜上，用于通过光刻进行的图案化处理，其中曝光后进行显影。 抗蚀剂面漆组合物含有作为基础树脂的聚合物，其具有由以下通式（1）表示的具有1,1,1,3,3,3-六氟-2-丙醇的苯乙烯的重复单元p，a C6-C10醚化合物和C7-C12烃化合物，其中m为1或2，p在0

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