公开(公告)号：US09837272B2

公开(公告)日：2017-12-05

申请号：US15092263

申请日：2016-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-Min Park ,  Su-Min Kim ,  Hyo-Jin Yun ,  Hyun-Woo Kim ,  Kyoung-Seon Kim ,  Hai-Sub Na ,  Min-Ju Park ,  So-Ra Han

IPC: H01L21/302 ,  H01L21/461 ,  H01B13/00 ,  B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  H01L21/033 ,  H01L21/322 ,  H01L21/426 ,  H01L21/425 ,  H01L21/311 ,  H01L27/108

CPC classification number: H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3223 ,  H01L21/425 ,  H01L21/426 ,  H01L27/10855 ,  H01L27/10888

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.