公开(公告)号：US10217816B2

公开(公告)日：2019-02-26

申请号：US15296077

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar Bhuwalka ,  Seong-Je Kim ,  Jong-Chol Kim ,  Hyun-Woo Kim

IPC: B82Y10/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L27/088 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US11515391B2

公开(公告)日：2022-11-29

申请号：US17070221

申请日：2020-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar Bhuwalka ,  Seong-Je Kim ,  Jong-Chol Kim ,  Hyun-Woo Kim

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/10 ,  H01L29/786 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US10311187B2

公开(公告)日：2019-06-04

申请号：US15287354

申请日：2016-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Wook Jeon ,  Hyo-Eun Park ,  Keun-Ho Lee ,  Ui-Hui Kwon ,  Jong-Chol Kim

IPC: G06F17/50 ,  H04L12/24

Abstract: A simulation method includes receiving a netlist describing a plurality of devices, performing an arithmetic operation by using values of random telegraph signal (RTS) noise factors respectively corresponding to the plurality of devices, generating an RTS model corresponding to each of the devices, based on a result of the arithmetic operation, and generating a netlist in which the RTS model is reflected.