公开(公告)号：US11854979B2

公开(公告)日：2023-12-26

申请号：US17379000

申请日：2021-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Eun Lee ,  Min Joo Lee ,  Wan Don Kim ,  Hyeon Jin Shin ,  Hyun Bae Lee ,  Hyun Seok Lim

IPC: H01L23/532 ,  H10B12/00 ,  H01L21/768

CPC classification number: H01L23/53252 ,  H01L23/53276 ,  H10B12/0335 ,  H10B12/315 ,  H10B12/482 ,  H01L21/76885

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an element isolation layer, the element isolation layer defining an active region, a plurality of word lines traversing the active region in a first direction, and a plurality of bit line structures on the substrate and connected to the active region, the plurality of bit line structures extending in a second direction different from the first direction. Each of the plurality of bit line structures includes a ruthenium line wiring including a bottom surface and a top surface opposite to the bottom surface, a lower graphene layer in contact with the bottom surface of the ruthenium line wiring and extending along the bottom surface of the ruthenium line wiring, and a wiring line capping layer extending along the top surface of the ruthenium line wiring.

公开(公告)号：US20160035676A1

公开(公告)日：2016-02-04

申请号：US14681313

申请日：2015-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun Im ,  Hyun Park ,  Soongun Lee ,  Chang Seok Lee ,  Sangwon Kim ,  Seongjun Park ,  Hyeon Jin Shin ,  Hanjin Lim

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/3213 ,  H01L29/06 ,  H01L27/108 ,  H01L21/02

CPC classification number: H01L23/53276 ,  H01L21/02527 ,  H01L21/32139 ,  H01L21/768 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53266 ,  H01L23/53271 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/0642 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern.

Abstract translation: 半导体器件可以包括：衬底，其包括由器件隔离层限定的有源区，有源区中的源极/漏极区，在与有源区平行的第一方向上延伸的并且沿与第一方向交叉的第二方向布置的字线; 在第二方向上延伸并与位于字线之间的有源区的一部分交叉的位线图形，以及覆盖位线图案的至少一部分的石墨烯图案。

公开(公告)号：US09337149B2

公开(公告)日：2016-05-10

申请号：US14681313

申请日：2015-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun Im ,  Hyun Park ,  Soongun Lee ,  Chang Seok Lee ,  Sangwon Kim ,  Seongjun Park ,  Hyeon Jin Shin ,  Hanjin Lim

IPC: H01L27/02 ,  H01L23/532 ,  H01L27/108 ,  H01L23/528 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/06 ,  H01L21/768

CPC classification number: H01L23/53276 ,  H01L21/02527 ,  H01L21/32139 ,  H01L21/768 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53266 ,  H01L23/53271 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/0642 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern.

Abstract translation: 半导体器件可以包括：衬底，其包括由器件隔离层限定的有源区，有源区中的源极/漏极区，在与有源区平行的第一方向上延伸的并且沿与第一方向交叉的第二方向布置的字线; 在第二方向上延伸并与位于字线之间的有源区的一部分交叉的位线图形，以及覆盖位线图案的至少一部分的石墨烯图案。