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公开(公告)号：US10120593B2
公开(公告)日：2018-11-06
申请号：US15160212
申请日：2016-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-beom Byun , Hu Zhao , Jong-gyu Park , Do-il Kong , Chung-hyun Ryu , Eok-soo Shim
Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.
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公开(公告)号：US12094803B2
公开(公告)日：2024-09-17
申请号：US17454119
申请日：2021-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungchul Hur , Duksoo Kim , Hu Zhao , Bumjun Kim
IPC: H01L23/00 , H01L23/467 , H01L25/065 , H01L25/18 , H05K1/14 , H05K7/20 , H05K1/18 , H05K5/00
CPC classification number: H01L23/467 , H01L25/0652 , H01L25/18 , H05K1/144 , H05K7/20163 , H05K7/20736 , H05K1/148 , H05K1/18 , H05K5/0047 , H05K5/0069 , H05K2201/10159
Abstract: A solid state drive apparatus includes a casing including a top plate, a bottom plate, a first sidewall, and a second sidewall. A first substrate is disposed inside the casing. At least one first semiconductor chip is mounted on the first substrate. A second substrate is disposed inside the casing. At least one second semiconductor chip is mounted on the second substrate. A heat dissipation structure is disposed between the first substrate and the second substrate and includes a lower heat dissipation panel contacting the at least one first semiconductor chip. An upper heat dissipation panel contacts the at least one second semiconductor chip. An air passage is provided between the lower heat dissipation panel and the upper heat dissipation panel and extends from the first sidewall of the casing to the second sidewall.
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公开(公告)号：US20240266248A1
公开(公告)日：2024-08-08
申请号：US18526697
申请日：2023-12-01
Applicant: SAMSUNG ELECTRONICS CO.,LTD.
Inventor： Byunghan KO , Doil Kong , Hu Zhao
IPC: H01L23/373 , H01L23/00 , H01L23/31 , H01L23/498 , H01L23/538 , H01L25/10 , H10B80/00
CPC classification number: H01L23/3736 , H01L23/3107 , H01L23/49822 , H01L23/5383 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/105 , H10B80/00 , H01L2224/16235 , H01L2224/32225 , H01L2224/73253 , H01L2924/1438
Abstract: The present disclosure provides semiconductor packages including dummy packages. In some embodiments, the semiconductor package includes a solid-state drive (SSD) device including a printed circuit board including a memory region, a plurality of memory packages disposed on the memory region, and at least one dummy package disposed on the memory region. The at least one dummy package is electrically coupled with the printed circuit board. The at least one dummy package includes a first pad constituting a heat path through which heat of the printed circuit board is dissipated.
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公开(公告)号：US20160342346A1
公开(公告)日：2016-11-24
申请号：US15160212
申请日：2016-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-beom Byun , Hu Zhao , Jong-gyu Park , Do-il Kong , Chung-hyun Ryu , Eok-soo Shim
Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.
Abstract translation: 控制非易失性存储装置的温度的方法包括：确定非易失性存储装置的温度是否大于控制接合温度，以及当非易失性存储装置的温度为非调制温度时调整数据I / O性能水平P， 易失性存储装置大于控制接合温度。 非易失性存储设备可以在非易失性存储设备被保护的范围内以最大性能水平操作。
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