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公开(公告)号：US20160342346A1
公开(公告)日：2016-11-24
申请号：US15160212
申请日：2016-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-beom Byun , Hu Zhao , Jong-gyu Park , Do-il Kong , Chung-hyun Ryu , Eok-soo Shim
Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.
Abstract translation: 控制非易失性存储装置的温度的方法包括：确定非易失性存储装置的温度是否大于控制接合温度，以及当非易失性存储装置的温度为非调制温度时调整数据I / O性能水平P， 易失性存储装置大于控制接合温度。 非易失性存储设备可以在非易失性存储设备被保护的范围内以最大性能水平操作。
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公开(公告)号：US09684345B2
公开(公告)日：2017-06-20
申请号：US14087095
申请日：2013-11-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-young Choi , Joon-young Oh , Hee-youb Kang , Jung-hoon Kim , Won-hwa Lee , Jae-beom Byun , Jong-yun Yun
CPC classification number: G06F1/187 , G06F1/203 , G11B2220/60 , G11C5/00 , G11C5/02 , G11C5/025 , H05K7/20445
Abstract: A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.
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公开(公告)号：US10120593B2
公开(公告)日：2018-11-06
申请号：US15160212
申请日：2016-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-beom Byun , Hu Zhao , Jong-gyu Park , Do-il Kong , Chung-hyun Ryu , Eok-soo Shim
Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.
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公开(公告)号：US20140146461A1
公开(公告)日：2014-05-29
申请号：US14087095
申请日：2013-11-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-young Choi , Joon-young Oh , Hee-youb Kang , Jung-hoon Kim , Won-hwa Lee , Jae-beom Byun , Jong-yun Yun
IPC: H05K7/20
CPC classification number: G06F1/187 , G06F1/203 , G11B2220/60 , G11C5/00 , G11C5/02 , G11C5/025 , H05K7/20445
Abstract: A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.
Abstract translation: 辅助存储器件包括：衬底和被配置为容纳衬底的至少一部分的壳体。 基板具有上下相对的表面，并且包括其第一半导体器件安装在上表面上的第一区域和第二半导体器件安装在上表面上的第二区域。 壳体包括覆盖第一区域的基板的上表面的第一子壳体和第一半导体器件。 第一子壳体不延伸以在第二区域覆盖基板的上表面。
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