公开(公告)号：US10120593B2

公开(公告)日：2018-11-06

申请号：US15160212

申请日：2016-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-beom Byun ,  Hu Zhao ,  Jong-gyu Park ,  Do-il Kong ,  Chung-hyun Ryu ,  Eok-soo Shim

IPC: G06F12/00 ,  G06F3/06 ,  G11C5/04 ,  G11C7/04

Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.

公开(公告)号：US20160342346A1

公开(公告)日：2016-11-24

申请号：US15160212

申请日：2016-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-beom Byun ,  Hu Zhao ,  Jong-gyu Park ,  Do-il Kong ,  Chung-hyun Ryu ,  Eok-soo Shim

IPC: G06F3/06 ,  G06F17/13 ,  G11C5/04

CPC classification number: G11C5/04 ,  G11C7/04

Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.

Abstract translation: 控制非易失性存储装置的温度的方法包括：确定非易失性存储装置的温度是否大于控制接合温度，以及当非易失性存储装置的温度为非调制温度时调整数据I / O性能水平P， 易失性存储装置大于控制接合温度。 非易失性存储设备可以在非易失性存储设备被保护的范围内以最大性能水平操作。