公开(公告)号：US20140146461A1

公开(公告)日：2014-05-29

申请号：US14087095

申请日：2013-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-young Choi ,  Joon-young Oh ,  Hee-youb Kang ,  Jung-hoon Kim ,  Won-hwa Lee ,  Jae-beom Byun ,  Jong-yun Yun

IPC: H05K7/20

CPC classification number: G06F1/187 ,  G06F1/203 ,  G11B2220/60 ,  G11C5/00 ,  G11C5/02 ,  G11C5/025 ,  H05K7/20445

Abstract: A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.

Abstract translation: 辅助存储器件包括：衬底和被配置为容纳衬底的至少一部分的壳体。 基板具有上下相对的表面，并且包括其第一半导体器件安装在上表面上的第一区域和第二半导体器件安装在上表面上的第二区域。 壳体包括覆盖第一区域的基板的上表面的第一子壳体和第一半导体器件。 第一子壳体不延伸以在第二区域覆盖基板的上表面。

公开(公告)号：US09684345B2

公开(公告)日：2017-06-20

申请号：US14087095

申请日：2013-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-young Choi ,  Joon-young Oh ,  Hee-youb Kang ,  Jung-hoon Kim ,  Won-hwa Lee ,  Jae-beom Byun ,  Jong-yun Yun

IPC: G11C5/00 ,  G06F1/18 ,  G11C5/02 ,  H05K7/20 ,  G06F1/20

CPC classification number: G06F1/187 ,  G06F1/203 ,  G11B2220/60 ,  G11C5/00 ,  G11C5/02 ,  G11C5/025 ,  H05K7/20445

Abstract: A secondary memory device includes: a substrate and a housing configured to accommodate at least a part of the substrate. The substrate has upper and lower opposed surfaces and includes a first region in which a first semiconductor device is mounted on the upper surface and a second region in which a second semiconductor device is mounted on the upper surface. The housing includes a first sub-housing covering the upper surface of the substrate at the first region and the first semiconductor device. The first sub-housing does not extend to cover the upper surface of the substrate at the second region.