公开(公告)号：US20230017244A1

公开(公告)日：2023-01-19

申请号：US17552756

申请日：2021-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin SHIN ,  Alum JUNG ,  Changseok LEE

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  C23C16/02

Abstract: A method of forming nanocrystalline graphene according to an embodiment may include: arranging a substrate having a pattern in a reaction chamber; injecting a reaction gas into the reaction chamber, where the reaction gas includes a carbon source gas, an inert gas, and a hydrogen gas that are mixed; generating a plasma of the reaction gas in the reaction chamber; and directly growing the nanocrystalline graphene on a surface of the pattern using the plasma of the reaction gas at a process temperature. The pattern may include a first material and the substrate may include a second material different from the first material.

公开(公告)号：US20190031906A1

公开(公告)日：2019-01-31

申请号：US15925034

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Minsu SEOL ,  Hyeonjin SHIN ,  Dongwook LEE ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: C09D165/00 ,  C01B32/184 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/311 ,  H01L21/027

CPC classification number: C09D165/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/184 ,  C08G61/02 ,  C08G2261/3424 ,  G03F7/094 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144 ,  Y10S977/734 ,  Y10S977/774 ,  Y10S977/842

Abstract: Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250° C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.

公开(公告)号：US20230238329A1

公开(公告)日：2023-07-27

申请号：US18158233

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Joungeun YOO ,  Eunkyu LEE ,  Changseok LEE ,  Alum JUNG

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53276 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242

Abstract: An interconnect structure may include a dielectric layer including a trench, a conductive wiring including graphene filling an inside of the trench, and a liner layer in contact with at least one surface of the conductive wiring and including a metal.

公开(公告)号：US20200039827A1

公开(公告)日：2020-02-06

申请号：US16233513

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum JUNG ,  Keunwook Shin ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Hyunseok Lim ,  Seunggeol Nam ,  Hyunjae Song ,  Yeonchoo Cho

IPC: C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.

公开(公告)号：US20190019675A1

公开(公告)日：2019-01-17

申请号：US15874226

申请日：2018-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook LEE ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Hyeonjin SHIN ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: H01L21/033 ,  H01L21/311 ,  C01B32/194

Abstract: Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M-O—C bond or an M-C bond, where M is a metal element, O is oxygen, and C is carbon.

公开(公告)号：US20230207312A1

公开(公告)日：2023-06-29

申请号：US18179565

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN ,  Changhyun KIM ,  Keunwook SHIN ,  Changseok LEE ,  Alum JUNG

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L21/02447 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/165 ,  H01L21/02499 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02381

Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.

公开(公告)号：US20200286732A1

公开(公告)日：2020-09-10

申请号：US16807702

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Janghee LEE ,  Seunggeol NAM ,  Hyeonjin SHIN ,  Hyunseok LIM ,  Alum JUNG ,  Kyung-Eun BYUN ,  Jeonil LEE ,  Yeonchoo CHO

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: Provided are a method of pre-treating a substrate and a method of directly forming graphene by using the method of pre-treating the substrate. In the method of pre-treating the substrate in the method of directly forming graphene, according to an embodiment, the substrate is pre-treated by using a pre-treatment gas including at least a carbon source and hydrogen. The method of directly forming graphene includes a process of pre-treating a substrate and a process of directly growing graphene on the substrate that is pre-treated. The process of pre-treating the substrate is performed according to the method of pre-treating the substrate.

公开(公告)号：US20180062543A1

公开(公告)日：2018-03-01

申请号：US15412557

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum JUNG ,  Hyeonjin SHIN ,  Jae-Young KIM ,  Kyung-Eun BYUN

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: Disclosed are triboelectric generators using surface plasmon resonance. A triboelectric generator includes first and second electrodes spaced apart from each other, first and second electrification layers provided on the first and second electrodes, respectively, and a light source provided to irradiate light onto the second electrification layer. Herein, the second electrification layer includes a metallic material configured to generate surface plasmon resonance due to light of a desired wavelength, and the light source irradiates the light of the desired wavelength configured to generate the surface plasmon resonance, onto the second electrification layer.

公开(公告)号：US20180024668A1

公开(公告)日：2018-01-25

申请号：US15403491

申请日：2017-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Jae-Young KIM ,  Hyeonjin SHIN ,  Alum JUNG

IPC: G06F3/044 ,  G02F1/167 ,  G02F1/01 ,  H02N1/04

CPC classification number: G06F3/044 ,  G02F1/0136 ,  G02F1/167 ,  G06F3/041 ,  H02N1/04

Abstract: Example embodiments relate to a triboelectric device including first and second electrodes that are spaced apart from each other, a charging layer provided on the first electrode, a display layer, which is provided between the first and second electrodes, configured to implement an image according to a change in an electric field between the first and second electrodes, and a charging member charged with an opposite polarity to the polarity of the charging layer by contacting the charging layer, wherein the triboelectric device is configured to implement the image according to the change in the electric field between the first and second electrodes in a contact area of the charging member and the charging layer.

公开(公告)号：US20250120150A1

公开(公告)日：2025-04-10

申请号：US18674359

申请日：2024-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baekwon PARK ,  Minseok YOO ,  Alum JUNG ,  Minsu SEOL ,  Hyungjun YOUN

IPC: H01L29/18 ,  H01L21/02 ,  H01L29/786

Abstract: A thin film structure according to various example embodiments includes a first buffer layer, a transition metal dichalcogenide layer on the first buffer layer, and a second buffer layer on the transition metal dichalcogenide layer, wherein the second buffer layer includes same chalcogen element as a chalcogen element included in the transition metal dichalcogenide layer.