DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE DISPLAY APPARATUS

    公开(公告)号:US20250089425A1

    公开(公告)日:2025-03-13

    申请号:US18883770

    申请日:2024-09-12

    Abstract: Provided is a display apparatus including a display substrate, a first pad and a second pad, a first electrode on the first pad, a multilayer semiconductor layer including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer on the first electrode, an insulating layer on the display substrate and adjacent to the first pad, the first electrode, and the multilayer semiconductor layer, a height of the insulating layer being lower than an upper surface of the multilayer semiconductor layer, and a second electrode on an upper surface of the multilayer semiconductor layer, an exposed lateral surface of the multilayer semiconductor layer, and a surface of the insulating layer, the second electrode connecting the second-type semiconductor layer and the second pad, an angle between the exposed lateral surface of the multilayer semiconductor layer and an upper surface of the insulating layer is 90 degrees or more.

    Dispenser for micro LED suspension and method of transferring micro LED

    公开(公告)号:US12165890B2

    公开(公告)日:2024-12-10

    申请号:US17469390

    申请日:2021-09-08

    Abstract: Provided is a dispenser for a solution including a reservoir configured to hold a suspension of micro light-emitting diodes (LEDs) suspended in a solvent; a stirrer configured to stir the suspension in the reservoir; a discharge path including a first valve configured to control outflow of the suspension from the reservoir; a filling path including a second valve configured to control inflow of the suspension into the reservoir; a hydraulic path including a third valve configured to control a pressure inside the reservoir; and a washing path connected to the first valve and configured to input a washing fluid for washing the discharge path into the discharge path, wherein the first valve includes a multi-way valve configured to selectively connect the discharge path to one of the reservoir and the washing path.

    Hybrid element and method of fabricating the same

    公开(公告)号:US12087754B2

    公开(公告)日:2024-09-10

    申请号:US17667241

    申请日:2022-02-08

    CPC classification number: H01L25/50 H01L25/167 H01L27/15

    Abstract: Provided is a method of fabricating a hybrid element, the method including forming a plurality of first elements on a first substrate, separating a plurality of second elements grown on a second substrate from the second substrate, a material of the second substrate being different from a material of the first substrate, and transferring the plurality of second elements, separated from the second substrate, onto the first substrate, wherein, in the transferring, the plurality of second elements are spaced apart from each other by a fluidic self-assembly method, and wherein each of the plurality of second elements includes a shuttle layer grown on the second substrate, an element layer grown on the shuttle layer, and an electrode layer on the element layer.

    Semiconductor device
    6.
    发明授权

    公开(公告)号:US11626377B2

    公开(公告)日:2023-04-11

    申请号:US17361588

    申请日:2021-06-29

    Abstract: A semiconductor device includes a semiconductor substrate including a chip region and an edge region around the chip region, a lower insulating layer on the semiconductor substrate, a chip pad on the lower insulating layer on the chip region, an upper insulating layer provided on the lower insulating layer to cover the chip pad, the upper and different insulating layers including different materials, and a redistribution chip pad on the chip region and connected to the chip pad. The upper insulating layer includes a first portion on the chip region having a first thickness, a second portion on the edge region having a second thickness, and a third portion on the edge region, the third portion extending from the second portion, spaced from the first portion, and having a decreasing thickness away from the second portion. The second thickness is smaller than the first thickness.

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