公开(公告)号：US20150287836A1

公开(公告)日：2015-10-08

申请号：US14743387

申请日：2015-06-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun-Jung Lee ,  Sung-Haeng Cho ,  Woo-Geun Lee ,  Jang-Hoon Ha ,  Hee-Jun Byeon ,  Ji-Yun Hong ,  Ji-Soo Oh

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

Abstract translation: 薄膜晶体管（TFT）包括衬底，在衬底上设置有在半导体层上彼此间隔开的第一源电极和第一漏电极的半导体层，设置在第一源极之间的半导体层中的沟道区 所述第一漏电极，设置在所述沟道区上的防蚀层，所述第一源电极和所述第一漏电极以及与所述第一源极接触的第二源电极，以及与所述第一漏极接触的第二漏极 电极。

公开(公告)号：US09018623B2

公开(公告)日：2015-04-28

申请号：US13674360

申请日：2012-11-12

Applicant: Samsung Display Co., Ltd.

Inventor： Duk-Sung Kim ,  Sung-Haeng Cho

IPC: H01L33/58 ,  H01L33/18 ,  H01L33/00 ,  H01L27/12

CPC classification number: H01L33/0041 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/18 ,  H01L33/58

Abstract: An array substrate includes a thin film transistor which includes a gate electrode electrically connected to a gate line, a source electrode electrically connected to a data line, a drain electrode and an active layer, a first electrode electrically connected to the drain electrode and disposed at a pixel area, and a second electrode covering an upper and a side surface of the source electrode. The second electrode is spaced apart from the first electrode.

Abstract translation: 阵列基板包括：薄膜晶体管，其包括电连接到栅极线的栅电极，与数据线电连接的源电极，漏电极和有源层;电连接到漏电极的第一电极， 像素区域和覆盖源电极的上表面和侧表面的第二电极。 第二电极与第一电极间隔开。

公开(公告)号：US09647136B2

公开(公告)日：2017-05-09

申请号：US14743387

申请日：2015-06-18

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun-Jung Lee ,  Sung-Haeng Cho ,  Woo-Geun Lee ,  Jang-Hoon Ha ,  Hee-Jun Byeon ,  Ji-Yun Hong ,  Ji-Soo Oh

IPC: H01L29/786 ,  H01L27/15 ,  H01L33/08 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

公开(公告)号：US20140001463A1

公开(公告)日：2014-01-02

申请号：US13674360

申请日：2012-11-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Duk-Sung KIM ,  Sung-Haeng Cho

IPC: H01L33/00 ,  H01L33/58 ,  H01L33/18

CPC classification number: H01L33/0041 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/18 ,  H01L33/58

Abstract: An array substrate includes a thin film transistor which includes a gate electrode electrically connected to a gate line, a source electrode electrically connected to a data line, a drain electrode and an active layer, a first electrode electrically connected to the drain electrode and disposed at a pixel area, and a second electrode covering an upper and a side surface of the source electrode. The second electrode is spaced apart from the first electrode.

Abstract translation: 阵列基板包括：薄膜晶体管，其包括电连接到栅极线的栅电极，与数据线电连接的源电极，漏电极和有源层;电连接到漏电极的第一电极， 像素区域和覆盖源电极的上表面和侧表面的第二电极。 第二电极与第一电极间隔开。

公开(公告)号：US09117917B2

公开(公告)日：2015-08-25

申请号：US13650528

申请日：2012-10-12

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun-Jung Lee ,  Sung-Haeng Cho ,  Woo-Geun Lee ,  Jang-Hoon Ha ,  Hee-Jun Byeon ,  Ji-Yun Hong ,  Ji-Soo Oh

IPC: H01L27/15 ,  H01L29/786

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

Abstract translation: 薄膜晶体管（TFT）包括衬底，在衬底上设置有在半导体层上彼此间隔开的第一源电极和第一漏电极的半导体层，设置在第一源极之间的半导体层中的沟道区 所述第一漏电极，设置在所述沟道区上的防蚀层，所述第一源电极和所述第一漏电极以及与所述第一源极接触的第二源电极，以及与所述第一漏极接触的第二漏极 电极。

公开(公告)号：US09070718B2

公开(公告)日：2015-06-30

申请号：US13900072

申请日：2013-05-22

Applicant: Samsung Display Co., Ltd.

Inventor： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  G02F1/1345

CPC classification number: H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

Abstract translation: 薄膜晶体管，显示装置及其制造方法。 薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。 半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。 第一结晶度高于第二结晶度。