公开(公告)号：US20190256978A1

公开(公告)日：2019-08-22

申请号：US16404223

申请日：2019-05-06

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk LEE ,  Suk-Won JUNG ,  Myung-Soo HUH ,  Mi-Ra AN

IPC: C23C16/46 ,  H01J37/32 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52 ,  C23C16/509

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

公开(公告)号：US20170218508A1

公开(公告)日：2017-08-03

申请号：US15492941

申请日：2017-04-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Jeong-Ho YI ,  Sang-Hyuk HONG ,  Yong-Suk LEE

IPC: C23C16/04 ,  H01L51/00 ,  C23C16/52 ,  C23C16/50 ,  C23C16/44 ,  H01L51/56 ,  C23C16/458

CPC classification number: C23C16/042 ,  C23C16/4405 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/681 ,  H01L21/682 ,  H01L21/68735 ,  H01L21/68742 ,  H01L27/3244 ,  H01L51/0012 ,  H01L51/56

Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.

公开(公告)号：US20160376698A1

公开(公告)日：2016-12-29

申请号：US15261629

申请日：2016-09-09

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Suk LEE ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Jeong-Ho YI ,  Mi-Ra AN

IPC: C23C14/54

CPC classification number: C23C14/543 ,  B05D1/60 ,  C23C14/12 ,  C23C14/246 ,  C23C14/544 ,  C23C16/4481

Abstract: A monomer vaporizing device and a method of controlling the same are disclosed. The monomer vaporizing device includes: a first vaporizer and a second vaporizer that receive a purge gas and vaporize a first monomer and a second monomer, respectively; a first flow pipe and a second flow pipe that are connected to the respective vaporizers and allow the first monomer and the second monomer, vaporized by the respective vaporizers, to flow therethrough; a transition tube that is connected to the first flow pipe and the second flow pipe and supplies at least one of the first monomer and the second monomer to a deposition chamber; and a control valve apparatus that regulates monomer flow into the deposition chamber. The device facilitates smooth and uninterrupted application of monomer to the interior of a deposition chamber.

Abstract translation: 公开了一种单体蒸发装置及其控制方法。 单体蒸发装置包括：第一蒸发器和第二蒸发器，其分别接收吹扫气体并蒸发第一单体和第二单体; 第一流管和第二流管，其连接到相应的蒸发器并允许由各蒸发器蒸发的第一单体和第二单体流过其中; 过渡管，其连接到所述第一流管和所述第二流管，并且将至少一个所述第一单体和所述第二单体供应到沉积室; 以及调节单体流入沉积室的控制阀装置。 该装置有助于将单体平滑且不间断地应用于沉积室的内部。

公开(公告)号：US20140174360A1

公开(公告)日：2014-06-26

申请号：US14020848

申请日：2013-09-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Jin-Kwang KIM ,  In-Kyo KIM ,  Choel-Min JANG

IPC: H01L51/56

CPC classification number: H01L51/56 ,  C23C16/452 ,  H01J37/32357

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

Abstract translation: 一种用于在基板上形成沉积层的气相沉积装置，所述气相沉积装置包括：供给单元，被配置为接收第一源气体，与供给单元连接的反应空间，反应空间中的等离子体发生器，第一注入单元 被配置为将沉积源材料注入到所述基板，所述沉积源材料包括所述第一源气体和所述反应空间中的细丝单元，所述灯丝单元连接到电源。

公开(公告)号：US20180342708A1

公开(公告)日：2018-11-29

申请号：US16045909

申请日：2018-07-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Jin-Kwang KIM ,  In-Kyo KIM ,  Choel-Min JANG

IPC: H01L51/56 ,  H01J37/32 ,  C23C16/452

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

公开(公告)号：US20150084012A1

公开(公告)日：2015-03-26

申请号：US14291045

申请日：2014-05-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin-Kwang KIM ,  Jae-Hyun KIM ,  Hang-Ki RO ,  Chang-Woo SHIM ,  Suk-Won JUNG ,  Sun-Taek JEONG ,  Myung-Soo HUH

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5256

Abstract: An organic light emitting display apparatus includes a substrate, a display unit on the substrate, a dispersion layer on the display unit, and a thin film encapsulation layer sealing the display unit and the dispersion layer. The dispersion layer has a diffusion coefficient in a horizontal direction that is greater than a diffusion coefficient in a vertical direction.

Abstract translation: 有机发光显示装置包括基板，基板上的显示单元，显示单元上的分散层，以及密封显示单元和分散层的薄膜封装层。 分散层在水平方向上的扩散系数大于垂直方向上的扩散系数。

公开(公告)号：US20150031167A1

公开(公告)日：2015-01-29

申请号：US14269175

申请日：2014-05-04

Applicant: Samsung Display Co., Ltd.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Sung-Chul KIM ,  Sang-Hyuk HONG ,  Choel-Min JANG

IPC: H01L51/52 ,  H01L21/02 ,  H01L21/285 ,  H01L51/56

CPC classification number: H01L21/28506 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02274 ,  H01L51/001 ,  H01L51/56

Abstract: A deposition apparatus for performing a deposition process on a substrate includes: an injection unit including a plasma generating member which receives a raw material gas and converts the raw material gas to a deposition source material in a radical form; and a plasma processor disposed adjacent to the injection unit and facing a side of the injection unit, wherein the plasma processor performs a plasma process in a direction facing the substrate.

Abstract translation: 用于在基板上进行沉积处理的沉积装置包括：注入单元，其包括等离子体产生元件，该等离子体产生元件接纳原料气体，并将原料气体以基本形式转化为沉积源材料; 以及等离子体处理器，其与所述注入单元相邻并且面向所述注入单元的一侧，其中所述等离子体处理器在面向所述基板的方向上执行等离子体处理。

公开(公告)号：US20160322574A1

公开(公告)日：2016-11-03

申请号：US15205815

申请日：2016-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin-Kwang KIM ,  Seung-Yong SONG ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Choel-Min JANG ,  Jae-Hyun KIM ,  Sung-Chul KIM

IPC: H01L51/00 ,  C23C16/50 ,  C23C16/455 ,  C23C16/44 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L51/0021 ,  C23C14/24 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/50 ,  H01B13/30 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

Abstract: A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

Abstract translation: 一种气相沉积装置，其中通过移动基板进行沉积工艺，所述气相沉积设备包括向基板注入至少一种原料气体的供应单元和对应于供应设置的阻塞气体流产生单元 并且产生阻挡原料气体流动的气流。

公开(公告)号：US20160164034A1

公开(公告)日：2016-06-09

申请号：US15046024

申请日：2016-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Myung-Soo HUH ,  Jae-Hyun KIM ,  Jin-Kwang KIM ,  Cheol-Lae ROH ,  Suk-Won JUNG ,  Cheol-Min JANG

IPC: H01L51/52

CPC classification number: H01L51/5256 ,  H01L51/5253

Abstract: An organic light-emitting apparatus including: a substrate; an organic light-emitting device disposed on the substrate and including a first electrode, a second electrode, and an intermediate layer disposed between the first electrode and the second electrode; and an encapsulation layer provided to cover the organic light-emitting device. The encapsulation layer includes a first inorganic layer including a first fracture point, and a first fracture control layer provided on the first inorganic layer to seal the first fracture point.

公开(公告)号：US20150050421A1

公开(公告)日：2015-02-19

申请号：US14296029

申请日：2014-06-04

Applicant: Samsung Display Co., Ltd.

Inventor： Choel-Min JANG ,  Sung-Hun KEY ,  In-Kyo KIM ,  Suk-Won JUNG ,  Myung-Soo HUH

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45574 ,  C23C16/45551 ,  C23C16/458

Abstract: A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer.

Abstract translation: 沉积层的方法包括使用至少一个源气体喷嘴和至少一个反应气体喷嘴将源气体和反应气体喷射到设置在基座单元上的基板上，以形成第一源气体区域和第一反应气体 区域，分别使基座单元沿着第一方向移动对应于源气体喷嘴的宽度的距离或反应气体喷嘴的宽度，并将源气体和反应气体喷射到第一方向上 反应气体区域和第一源气体区域分别使用源气体喷嘴和反应气体喷嘴形成第一单层。