Abstract:
A method of manufacturing a glass includes forming a first etch protection layer on a first surface of a glass substrate, and forming a second etch protection layer on a second surface of the glass substrate; removing a part of the first protection layer and a part of the second protection layer by applying a laser pulse penetrating the glass substrate from above the first surface of the glass substrate; forming a cut part in the glass substrate by etching the glass substrate using an etching solution; and removing the first etch protection layer and the second etch protection layer. The second surface is opposite to the first surface.
Abstract:
A laser processing apparatus according to an exemplary embodiment includes: a light source generating a laser beam; and a light converging unit converging the laser beam to a focal point on an object to be processed, wherein the light converging unit includes a first optical element including a through hole penetrating the first optical element; a second optical element including a first region reflecting the laser beam and a second region transmitting the laser beam; and a third optical element including a focusing lens as a convex lens, a lower surface of the first optical element is a concave mirror, and an upper surface of the second optical element is convex and a lower surface thereof is concave.
Abstract:
A method of manufacturing a deposition mask includes: a splitting process in which a laser beam irradiated from a light source is split into a plurality of laser beams; a scanning process in which the plurality of laser beams are simultaneously scanned onto the mask substrate; and a tuning process in which irradiation states of the plurality of laser beams are finely changed to correspond to shapes of the plurality of pattern holes while the plurality of laser beams are scanned.
Abstract:
A method of forming an organic light emitting pattern of an organic electro-luminescence display according to an exemplary embodiment of the present invention includes preparing a display substrate in which a region where a first organic light emitting material is to be formed is defined, preparing a temporal transfer substrate (TTS) that is a transfer subject on which the first organic light emitting material is to be transferred, forming the first organic light emitting material on the temporal transfer substrate, applying heat to a portion other than a first region of the temporal transfer substrate to remove the first organic light emitting material formed on the portion other than the first region, disposing the temporal transfer substrate and the display substrate to closely face each other, and applying heat to the temporal transfer substrate to transfer the organic light emitting material on the display substrate.
Abstract:
An apparatus for monitoring deposition rate, an apparatus including the same, for depositing an organic layer, a method of monitoring deposition rate, and a method of manufacturing an organic light emitting display apparatus using the same, are provided. The deposition rate monitoring apparatus for measuring deposition rate of a deposition material discharged from a deposition source, includes: a light source for irradiating light having a wavelength within a photoexcitation bandwidth of the deposition material; a first optical system for irradiating the light emitted from the light source toward the discharged deposition material; a second optical system for collecting the light emitted from the deposition material; and a first light sensor for detecting the amount of the light which is emitted from the deposition material and collected in the second optical system.
Abstract:
A method for detecting a defect of a barrier film includes preparing a device including an electrode and a barrier film covering the electrode, allowing a charged medium to contact a surface of the barrier film, and measuring a change in a flow of current between the charged medium and the electrode.
Abstract:
A method of manufacturing a deposition mask includes: a splitting process in which a laser beam irradiated from a light source is split into a plurality of laser beams; a scanning process in which the plurality of laser beams are simultaneously scanned onto the mask substrate; and a tuning process in which irradiation states of the plurality of laser beams are finely changed to correspond to shapes of the plurality of pattern holes while the plurality of laser beams are scanned.
Abstract:
A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2.
Abstract translation:一种用于检查多晶硅层的方法包括:向多晶硅层辐射激发光; 并且检测由激发光产生的光致发光信号,其中激发光的平均功率具有1W / cm 2至10W / cm 2的范围,并且激发光的峰值功率具有100W / cm 2至1000W的范围 / cm2。
Abstract:
A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.
Abstract:
A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.