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公开(公告)号：US10456939B2
公开(公告)日：2019-10-29
申请号：US15869966
申请日：2018-01-12
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyung-Hoe Heo , Seung-Jun Lee
Abstract: A cell cutting device that cuts a mother substrate for display devices includes a fixing unit configured to move in a state where the mother substrate for display devices is fixed on the fixing unit, a cutter configured to perform a cutting process on the mother substrate for display devices and the cutter faces a surface of the mother substrate during the cutting process, a cutter driving unit driving the cutter in a state where the cutter is fixed thereon, and a buffer member arranged on another surface of the mother substrate to correspond to the cutter. The other surface is opposite the surface facing the cutter.
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Patent Agency Ranking
2.发明授权Carrier substrate removing apparatus, display apparatus manufacturing system, and method of manufacturing the display apparatus 有权载体基板去除装置，显示装置制造系统以及制造该显示装置的方法公开(公告)号：US09010398B2
公开(公告)日：2015-04-21
申请号：US13786391
申请日：2013-03-05
Applicant: Samsung Display Co., Ltd.
Inventor： Jin-Keon Kweon , Kyung-Hoe Heo , Ki-Taek Kim
CPC classification number: B32B43/006 , B32B2457/20 , G02F1/1303 , G02F1/133305 , G02F2202/28 , H01L51/003 , H01L51/56 , Y10T156/1132 , Y10T156/1158 , Y10T156/19 , Y10T156/1917 , Y10T156/1944
Abstract: A carrier substrate removing apparatus configured to separate a flexible substrate bonded to a carrier substrate includes a carrier substrate holding unit configured to hold the carrier substrate separated from the flexible substrate; an inclined separation unit configured, with the carrier substrate holding unit, to separate the flexible substrate from the carrier substrate and to transport the flexible substrate at an angle; and a transmittance measuring unit configured to measure a transmittance of the separated carrier substrate.
Abstract translation: 配置为分离接合到载体基板的柔性基板的载体基板去除装置包括：载体基板保持单元，其构造成保持与柔性基板分离的载体基板; 配置有载体基板保持单元的倾斜分离单元，用于将柔性基板与载体基板分离并以一定角度输送柔性基板; 以及透射率测量单元，被配置为测量分离的载体衬底的透射率。
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3.发明申请CARRIER SUBSTRATE REMOVING APPARATUS, DISPLAY APPARATUS MANUFACTURING SYSTEM, AND METHOD OF MANUFACTURING THE DISPLAY APPARATUS 有权载体基板去除装置，显示装置制造系统以及制造显示装置的方法公开(公告)号：US20140138032A1
公开(公告)日：2014-05-22
申请号：US13786391
申请日：2013-03-05
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jin-Keon Kweon , Kyung-Hoe Heo , Ki-Taek Kim
IPC: B32B43/00
CPC classification number: B32B43/006 , B32B2457/20 , G02F1/1303 , G02F1/133305 , G02F2202/28 , H01L51/003 , H01L51/56 , Y10T156/1132 , Y10T156/1158 , Y10T156/19 , Y10T156/1917 , Y10T156/1944
Abstract: A carrier substrate removing apparatus configured to separate a flexible substrate bonded to a carrier substrate includes a carrier substrate holding unit configured to hold the carrier substrate separated from the flexible substrate; an inclined separation unit configured, with the carrier substrate holding unit, to separate the flexible substrate from the carrier substrate and to transport the flexible substrate at an angle; and a transmittance measuring unit configured to measure a transmittance of the separated carrier substrate.
Abstract translation: 配置为分离接合到载体基板的柔性基板的载体基板去除装置包括：载体基板保持单元，其构造成保持与柔性基板分离的载体基板; 配置有载体基板保持单元的倾斜分离单元，用于将柔性基板与载体基板分离并以一定角度输送柔性基板; 以及透射率测量单元，被配置为测量分离的载体衬底的透射率。
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公开(公告)号：US09464991B2
公开(公告)日：2016-10-11
申请号：US14094051
申请日：2013-12-02
Applicant: Samsung Display Co., Ltd.
Inventor： Alexander Voronov , Suk-Ho Lee , Jae-Seung Yoo , Kyung-Hoe Heo , Gyoo-Wan Han
CPC classification number: G01N21/6489 , G01N21/9501
Abstract: A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2.
Abstract translation: 一种用于检查多晶硅层的方法包括：向多晶硅层辐射激发光; 并且检测由激发光产生的光致发光信号，其中激发光的平均功率具有1W / cm 2至10W / cm 2的范围，并且激发光的峰值功率具有100W / cm 2至1000W的范围 / cm2。
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5.发明授权Method of measuring a silicon thin film, method of detecting defects in a silicon thin film, and silicon thin film defect detection device 有权测量硅薄膜的方法，硅薄膜中的缺陷检测方法以及硅薄膜缺陷检测装置公开(公告)号：US09140742B2
公开(公告)日：2015-09-22
申请号：US13766271
申请日：2013-02-13
Applicant: Samsung Display Co., Ltd.
Inventor： Alexander Voronov , Seok-Ho Lee , Ji-Hunny Jung , Kyung-Hoe Heo , Gyoo-Wan Han
IPC: G01R31/02 , G01R31/26 , G01R31/265
CPC classification number: G01R31/26 , G01R31/2648 , G01R31/265
Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.
Abstract translation: 提供了一种测量硅薄膜的导电性的方法。 通过该方法，电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上，当激发光源模块被关闭时，使用电容传感器测量空气隙的尺寸， 通过打开激发光源模块（其中激发光为紫外光），在硅薄膜样品上照射激发光，使用电容式传感器测量硅薄膜样品的电导率变化，并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。
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6.发明申请METHOD OF MEASURING A SILICON THIN FILM, METHOD OF DETECTING DEFECTS IN A SILICON THIN FILM, AND SILICON THIN FILM DEFECT DETECTION DEVICE 有权测量硅薄膜的方法，检测硅薄膜中的缺陷的方法和硅薄膜缺陷检测装置公开(公告)号：US20130265078A1
公开(公告)日：2013-10-10
申请号：US13766271
申请日：2013-02-13
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Alexander Voronov , Seok-Ho Lee , Ji-Hunny Jung , Kyung-Hoe Heo , Gyoo-Wan Han
IPC: G01R31/26
CPC classification number: G01R31/26 , G01R31/2648 , G01R31/265
Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.
Abstract translation: 提供了一种测量硅薄膜的导电性的方法。 通过该方法，电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上，当激发光源模块被关闭时，使用电容传感器测量空气隙的尺寸， 通过打开激发光源模块（其中激发光为紫外光），在硅薄膜样品上照射激发光，使用电容式传感器测量硅薄膜样品的电导率变化，并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。
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