Abstract:
A pixel circuit includes an OLED, a first transistor including a gate electrode connected to a first node and an electrode connected to a third node, a capacitor including a first electrode for receiving a power supply voltage and a second electrode connected to the first node, a third transistor including a gate electrode for receiving a first gate signal, a first electrode connected to the first node, and a second electrode connected to the third node, a fourth transistor including a gate electrode for receiving a second gate signal, a first electrode connected to the first node, and a second electrode and a second gate electrode for receiving a first initialization voltage, and a seventh transistor including a gate electrode for receiving a third gate signal, a first electrode for receiving a second initialization voltage, and a second electrode connected to an anode electrode of the OLED.
Abstract:
A transparent display device according to example embodiments includes a substrate having a pixel area and a transmission area, a pixel circuit on the pixel area of the substrate, an insulation structure on the substrate to cover the pixel circuit, a first electrode on the pixel area of the substrate, the first electrode being at least partially penetrated the insulation structure and electrically connected to the pixel circuit, a display layer on the first electrode, a second electrode facing the first electrode and covering the display layer, and an anti-diffraction layer on the substrate, the anti-diffraction layer at least partially overlapping the transmission area and including a plurality of nano wires.
Abstract:
An organic light emitting display device includes a substrate, a light emitting structure, and a reflective metal layer. The substrate includes a pixel region and a peripheral region. The light emitting structure is disposed on the substrate. The reflective metal layer is disposed between the substrate and the light emitting structure. The reflective metal layer includes a plurality of nanowires and a plurality of openings that is defined by the nanowires.
Abstract:
A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.
Abstract:
An organic light emitting display device may have a pixel region and a transparent region, and may include a substrate, at least one semiconductor device disposed on the substrate in the pixel region, an organic light emitting structure disposed on the at least one semiconductor device, and a capacitor disposed on the substrate in the transparent region. The capacitor may have a sufficient capacitance without substantially reducing a transmittance of the organic light emitting display device. Additionally, the transparent region of the organic light emitting display device may serve as a mirror in accordance with the material included in a lower electrode of the capacitor and/or an upper electrode of the capacitor.
Abstract:
A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.
Abstract:
A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material.
Abstract:
A method of driving a display panel includes compensating first pixel data corresponding to a first pixel of a plurality of pixels in the display panel based on at least one of a first decision, a second decision, or a third decision and generating a first data voltage corresponding to the compensated first pixel data. The first data voltage is applied to the first pixel through a data line. The first decision includes determining, based on a position of the first pixel, whether compensation for the first pixel data is required. The second decision includes determining, based on previous subpixel data and present subpixel data for the first pixel, whether the compensation for the first pixel data is required. The third decision includes determining whether the first pixel data complies with a compensation avoidance condition.
Abstract:
A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.
Abstract:
A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.