Abstract:
An organic light emitting display device includes a substrate, a first insulating layer, a extension of a drain electrode, a second insulating layer, a first electrode, an emission layer, and a second electrode. The substrate has a display region and a transparent region. The first insulating layer is disposed on the substrate. The extension of drain electrode is disposed on the first insulating layer. The second insulating layer is disposed on the extension of a drain electrode such that an edge portion of the extension of a drain electrode is free from overlap with the second insulating layer. The first electrode is disposed on the second insulating layer and in contact with the edge portion of the extension of a drain electrode. The emission layer is disposed on the first electrode. The second electrode is disposed on the emission layer.
Abstract:
An organic light emitting display device includes a substrate, an active layer on the substrate, a first insulating layer on the substrate and the active layer, a gate electrode on the first insulating layer, a second insulating layer on and patterned to expose the first insulating layer, a source and a drain electrode on the second insulating layer and in contact with the active layer via contact holes in the second and the first insulating layers, a first electrode on the first insulating layer such that the first electrode is in contact with the source or the drain electrode, and including a transparent conductive layer and a transflective conductive layer, a third insulating layer on the second insulating layer, and patterned to expose the first electrode, an organic thin film layer on the exposed first electrode, and a second electrode on the organic thin film layer.
Abstract:
A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.
Abstract:
An organic light emitting display device includes a plurality of pixel regions on a substrate, each having a sub-pixel region, a transmissive region and a peripheral region, a plurality of sub-pixel circuits in the sub-pixel region that control the sub-pixel region, a planarization layer that covers the sub-pixel circuits, a first electrode disposed on the planarization layer in the sub-pixel region, a second electrode disposed on the first electrode, and a plurality of wirings disposed at different levels over the substrate in the peripheral region. The wirings are arranged in at least double level configuration and include first wirings that extend in a first direction over the substrate, and second wirings that extend over the substrate in a second direction substantially perpendicular to the first direction.
Abstract:
An organic light emitting display device may have a pixel region and a transparent region, and may include a substrate, at least one semiconductor device disposed on the substrate in the pixel region, an organic light emitting structure disposed on the at least one semiconductor device, and a capacitor disposed on the substrate in the transparent region. The capacitor may have a sufficient capacitance without substantially reducing a transmittance of the organic light emitting display device. Additionally, the transparent region of the organic light emitting display device may serve as a mirror in accordance with the material included in a lower electrode of the capacitor and/or an upper electrode of the capacitor.
Abstract:
An organic light emitting display device includes a first substrate, a plurality of common lines, an optical member, and a second substrate. The first substrate includes a pixel region and a transparent region. The light emitting structure is disposed on the first substrate of the pixel region. The common lines are disposed adjacent to a boundary of the pixel region and the transparent region. The optical member prevents a light diffraction generated adjacent to the common lines. The second substrate is disposed on the light emitting structure and the optical member.
Abstract:
A transparent display device according to example embodiments includes a substrate having a pixel area and a transmission area, a pixel circuit on the pixel area of the substrate, an insulation structure on the substrate to cover the pixel circuit, a first electrode on the pixel area of the substrate, the first electrode being at least partially penetrated the insulation structure and electrically connected to the pixel circuit, a display layer on the first electrode, a second electrode facing the first electrode and covering the display layer, and an anti-diffraction layer on the substrate, the anti-diffraction layer at least partially overlapping the transmission area and including a plurality of nano wires.
Abstract:
An organic light emitting display device includes a substrate, a light emitting structure, and a reflective metal layer. The substrate includes a pixel region and a peripheral region. The light emitting structure is disposed on the substrate. The reflective metal layer is disposed between the substrate and the light emitting structure. The reflective metal layer includes a plurality of nanowires and a plurality of openings that is defined by the nanowires.
Abstract:
A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.