LASER PROCESSING APPARATUS
    2.
    发明申请

    公开(公告)号:US20200180069A1

    公开(公告)日:2020-06-11

    申请号:US16657222

    申请日:2019-10-18

    Abstract: A laser processing apparatus according to an exemplary embodiment includes: a light source generating a laser beam; and a light converging unit converging the laser beam to a focal point on an object to be processed, wherein the light converging unit includes a first optical element including a through hole penetrating the first optical element; a second optical element including a first region reflecting the laser beam and a second region transmitting the laser beam; and a third optical element including a focusing lens as a convex lens, a lower surface of the first optical element is a concave mirror, and an upper surface of the second optical element is convex and a lower surface thereof is concave.

    Method of forming organic light emitting pattern and apparatus for forming organic light emitting pattern of organic electro-luminescence display using sublimation type thermal transfer method
    4.
    发明授权
    Method of forming organic light emitting pattern and apparatus for forming organic light emitting pattern of organic electro-luminescence display using sublimation type thermal transfer method 有权
    使用升华型热转印法形成有机发光图案的方法和形成有机电致发光显示用有机发光图案的装置

    公开(公告)号:US09065054B2

    公开(公告)日:2015-06-23

    申请号:US14225143

    申请日:2014-03-25

    CPC classification number: H01L51/0013

    Abstract: A method of forming an organic light emitting pattern of an organic electro-luminescence display according to an exemplary embodiment of the present invention includes preparing a display substrate in which a region where a first organic light emitting material is to be formed is defined, preparing a temporal transfer substrate (TTS) that is a transfer subject on which the first organic light emitting material is to be transferred, forming the first organic light emitting material on the temporal transfer substrate, applying heat to a portion other than a first region of the temporal transfer substrate to remove the first organic light emitting material formed on the portion other than the first region, disposing the temporal transfer substrate and the display substrate to closely face each other, and applying heat to the temporal transfer substrate to transfer the organic light emitting material on the display substrate.

    Abstract translation: 根据本发明的示例性实施例的形成有机电致发光显示器的有机发光图案的方法包括制备其中要形成第一有机发光材料的区域的显示基板,制备 时间转移衬底(TTS),其是要转移第一有机发光材料的转移对象,在时间转移衬底上形成第一有机发光材料,向除了第一有机发光材料的第一区域以外的部分施加热量 转移基板以除去形成在第一区域之外的部分上的第一有机发光材料,将时间转移基板和显示基板彼此紧密相对地设置,并且向时间转移基板施加热量以转移有机发光材料 在显示基板上。

    APPARATUS FOR MONITORING DEPOSITION RATE, APPARATUS PROVIDED WITH THE SAME FOR DEPOSITING ORGANIC LAYER, METHOD OF MONITORING DEPOSITION RATE, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE SAME
    5.
    发明申请
    APPARATUS FOR MONITORING DEPOSITION RATE, APPARATUS PROVIDED WITH THE SAME FOR DEPOSITING ORGANIC LAYER, METHOD OF MONITORING DEPOSITION RATE, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE SAME 有权
    用于监测沉积速率的装置,用于沉积有机层的装置,监测沉积速率的方法,以及使用该方法制造有机发光显示装置的方法

    公开(公告)号:US20140377890A1

    公开(公告)日:2014-12-25

    申请号:US14079522

    申请日:2013-11-13

    CPC classification number: G01N21/6489 C23C14/24 C23C14/547 C23C14/568

    Abstract: An apparatus for monitoring deposition rate, an apparatus including the same, for depositing an organic layer, a method of monitoring deposition rate, and a method of manufacturing an organic light emitting display apparatus using the same, are provided. The deposition rate monitoring apparatus for measuring deposition rate of a deposition material discharged from a deposition source, includes: a light source for irradiating light having a wavelength within a photoexcitation bandwidth of the deposition material; a first optical system for irradiating the light emitted from the light source toward the discharged deposition material; a second optical system for collecting the light emitted from the deposition material; and a first light sensor for detecting the amount of the light which is emitted from the deposition material and collected in the second optical system.

    Abstract translation: 提供了一种用于监测沉积速率的装置,包括其的装置,用于沉积有机层,监测沉积速率的方法,以及制造使用其的有机发光显示装置的方法。 用于测量从沉积源排出的沉积材料的沉积速率的沉积速率监测装置包括:用于照射具有在沉积材料的光激发带宽内的波长的光的光源; 第一光学系统,用于将从光源发射的光朝向排出的沉积材料照射; 用于收集从沉积材料发射的光的第二光学系统; 以及第一光传感器,用于检测从沉积材料发射并收集在第二光学系统中的光量。

    BARRIER FILM DEFECT DETECTING METHOD AND APPARATUS
    6.
    发明申请
    BARRIER FILM DEFECT DETECTING METHOD AND APPARATUS 有权
    障碍物膜缺陷检测方法和装置

    公开(公告)号:US20140232419A1

    公开(公告)日:2014-08-21

    申请号:US14019476

    申请日:2013-09-05

    CPC classification number: G01N27/20 G01N19/08 G01N21/88 G01N23/18 G01N27/02

    Abstract: A method for detecting a defect of a barrier film includes preparing a device including an electrode and a barrier film covering the electrode, allowing a charged medium to contact a surface of the barrier film, and measuring a change in a flow of current between the charged medium and the electrode.

    Abstract translation: 用于检测阻挡膜的缺陷的方法包括制备包括电极和覆盖电极的阻挡膜的器件,允许带电介质接触阻挡膜的表面,并测量电荷流动之间的电流流动的变化 介质和电极。

    Method for inspecting polysilicon layer
    8.
    发明授权
    Method for inspecting polysilicon layer 有权
    多晶硅层检查方法

    公开(公告)号:US09464991B2

    公开(公告)日:2016-10-11

    申请号:US14094051

    申请日:2013-12-02

    CPC classification number: G01N21/6489 G01N21/9501

    Abstract: A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2.

    Abstract translation: 一种用于检查多晶硅层的方法包括:向多晶硅层辐射激发光; 并且检测由激发光产生的光致发光信号,其中激发光的平均功率具有1W / cm 2至10W / cm 2的范围,并且激发光的峰值功率具有100W / cm 2至1000W的范围 / cm2。

    Method of measuring a silicon thin film, method of detecting defects in a silicon thin film, and silicon thin film defect detection device
    9.
    发明授权
    Method of measuring a silicon thin film, method of detecting defects in a silicon thin film, and silicon thin film defect detection device 有权
    测量硅薄膜的方法,硅薄膜中的缺陷检测方法以及硅薄膜缺陷检测装置

    公开(公告)号:US09140742B2

    公开(公告)日:2015-09-22

    申请号:US13766271

    申请日:2013-02-13

    CPC classification number: G01R31/26 G01R31/2648 G01R31/265

    Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

    Abstract translation: 提供了一种测量硅薄膜的导电性的方法。 通过该方法,电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上,当激发光源模块被关闭时,使用电容传感器测量空气隙的尺寸, 通过打开激发光源模块(其中激发光为紫外光),在硅薄膜样品上照射激发光,使用电容式传感器测量硅薄膜样品的电导率变化,并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。

    METHOD OF MEASURING A SILICON THIN FILM, METHOD OF DETECTING DEFECTS IN A SILICON THIN FILM, AND SILICON THIN FILM DEFECT DETECTION DEVICE
    10.
    发明申请
    METHOD OF MEASURING A SILICON THIN FILM, METHOD OF DETECTING DEFECTS IN A SILICON THIN FILM, AND SILICON THIN FILM DEFECT DETECTION DEVICE 有权
    测量硅薄膜的方法,检测硅薄膜中的缺陷的方法和硅薄膜缺陷检测装置

    公开(公告)号:US20130265078A1

    公开(公告)日:2013-10-10

    申请号:US13766271

    申请日:2013-02-13

    CPC classification number: G01R31/26 G01R31/2648 G01R31/265

    Abstract: A method of measuring conductivity of a silicon thin film is provided. By the method, a capacitive sensor is positioned over a silicon thin film sample with an air-gap between the sensor and the sample, a size of the air-gap is measured using the capacitive sensor while an excitation light source module is turned off, an excitation light is illuminated on the silicon thin film sample by turning on the excitation light source module, where the excitation light is an ultraviolet light, a conductivity change of the silicon thin film sample is measured using the capacitive sensor, and a measurement error due to a deviation of the air-gap is eliminated by normalizing the conductivity change based on a measurement result of the size of the air-gap.

    Abstract translation: 提供了一种测量硅薄膜的导电性的方法。 通过该方法,电容传感器位于传感器和样品之间的气隙的硅薄膜样品之上,当激发光源模块被关闭时,使用电容传感器测量空气隙的尺寸, 通过打开激发光源模块(其中激发光为紫外光),在硅薄膜样品上照射激发光,使用电容式传感器测量硅薄膜样品的电导率变化,并测量误差 通过基于空气隙的尺寸的测量结果对电导率变化进行归一化来消除气隙的偏差。

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