公开(公告)号：US20200083219A1

公开(公告)日：2020-03-12

申请号：US16358118

申请日：2019-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/308 ,  H01L29/66

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US11923362B2

公开(公告)日：2024-03-05

申请号：US18314569

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US11676964B2

公开(公告)日：2023-06-13

申请号：US17886530

申请日：2022-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-Won Kim ,  Jung-gil Yang

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US10930649B2

公开(公告)日：2021-02-23

申请号：US16358118

申请日：2019-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US10566331B1

公开(公告)日：2020-02-18

申请号：US16257913

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-gil Yang ,  Sang-su Kim ,  Sun-wook Kim ,  Geum-jong Bae ,  Seung-min Song ,  Soo-jin Jeong

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L21/8238 ,  H01L21/02

Abstract: A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.

公开(公告)号：US09412816B2

公开(公告)日：2016-08-09

申请号：US14605041

申请日：2015-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-gil Yang ,  Sang-su Kim ,  Tae-yong Kwon

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/0673 ,  H01L29/42392 ,  H01L29/66431 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device comprises at least two nanowire patterns over a substrate, wherein the at least two nanowire patterns have increasingly narrower widths as they extend away from the substrate and have different channel impurity concentrations. A gate electrode surrounds at least a part of the at least two nanowire patterns. A gate dielectric film is disposed between the at least two nanowire patterns and the gate electrode.

Abstract translation: 半导体器件在衬底上包括至少两个纳米线图案，其中当它们远离衬底延伸并且具有不同的沟道杂质浓度时，至少两个纳米线图案具有越来越窄的宽度。 栅电极围绕至少两个纳米线图案的至少一部分。 栅电介质膜设置在至少两个纳米线图案和栅电极之间。

公开(公告)号：US20230282642A1

公开(公告)日：2023-09-07

申请号：US18314569

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Myung-gil KANG ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

CPC classification number: H01L27/0886 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/7851 ,  H01L21/823431 ,  H01L29/66795 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/3086 ,  H01L29/66545 ,  H01L21/823468

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US20220384432A1

公开(公告)日：2022-12-01

申请号：US17886530

申请日：2022-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US11444081B2

公开(公告)日：2022-09-13

申请号：US17150712

申请日：2021-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.