公开(公告)号：US11864411B2

公开(公告)日：2024-01-02

申请号：US17092568

申请日：2020-11-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin Chung ,  Sanggun Choi ,  Yeoungkeol Woo ,  Myounggeun Cha ,  Eunjin Kwak

IPC: H10K50/844 ,  H01L29/786 ,  H10K71/00

CPC classification number: H10K50/844 ,  H01L29/786 ,  H10K71/00

Abstract: A display apparatus includes a first substrate, a main pixel circuit located on the first substrate and including a first semiconductor layer, an auxiliary pixel circuit located on the first substrate and including a second semiconductor layer, a buffer layer located between the first substrate and the first semiconductor layer and between the first substrate and the second semiconductor layer, and a barrier layer located between the first substrate and the buffer layer, including one material from among silicon nitride (SiNx), aluminum oxide (Al2O3), and zirconium oxide (Zr2O3), and having a density ranging from about 2 g/cm3 to about 6 g/cm3.

公开(公告)号：US20230090817A1

公开(公告)日：2023-03-23

申请号：US17743424

申请日：2022-05-12

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Joohee Jeon ,  Sanggun Choi

IPC: H01L27/32

Abstract: A display apparatus for displaying a high-resolution image and having a low occurrence rate of defects caused by a voltage drop. The display apparatus includes a substrate, a first conductive layer arranged on the substrate and including an auxiliary data line extending in a first direction, a first semiconductor layer arranged on the first conductive layer, a first gate layer arranged on the first semiconductor layer, a first connection electrode layer arranged on the first gate layer and including a first connection electrode electrically connected to the first semiconductor layer and the auxiliary data line, and a second connection electrode layer arranged on the first connection electrode layer and including a data line electrically connected to the first connection electrode.

公开(公告)号：US09417516B2

公开(公告)日：2016-08-16

申请号：US14794079

申请日：2015-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bongyeon Kim ,  Min Kang ,  Yong Son ,  Hyunjoo Lee ,  Myounggeun Cha ,  Jinho Ju

IPC: H01L21/00 ,  G03F1/26 ,  G03F7/20 ,  H01L21/02

CPC classification number: H01L21/0268 ,  G03F1/30 ,  G03F7/0043 ,  G03F7/20 ,  H01L21/02532 ,  H01L21/02678

Abstract: Provided is a method of manufacturing a display apparatus, the method including forming an amorphous silicon layer on a substrate; changing amorphous silicon in the amorphous silicon layer into crystalline silicon by irradiating the amorphous silicon with a laser beam emitted through a phase shift mask; and forming a display device, the phase shift mask including a base substrate; a barrier layer on the base substrate and including a plurality of transmissive portions which are spaced apart from each other in a first direction; and phase shift portions which alternately fill the plurality of transmissive portions in the first direction.

Abstract translation: 提供一种制造显示装置的方法，所述方法包括在基板上形成非晶硅层; 通过用通过相移掩模发射的激光束照射非晶硅，将非晶硅层中的非晶硅变成晶体硅; 以及形成显示装置，所述相移掩模包括基底基板; 在所述基底基板上的阻挡层，并且包括在第一方向上彼此间隔开的多个透射部; 以及在第一方向交替地填充多个透射部的相移部。

公开(公告)号：US20140191228A1

公开(公告)日：2014-07-10

申请号：US13893817

申请日：2013-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： SEOHONG JUNG ,  Sun Hee Lee ,  Seung-Hwan Cho ,  Myounggeun Cha ,  Yoonho Khang ,  Youngki Shin

IPC: H01L29/786

CPC classification number: H01L29/78621 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract translation: 薄膜晶体管包括设置在基底基板上的半导体层，其包括分别从半导体层的相对端延伸的氧化物半导体材料，源电极和漏电极，分别设置在半导体层之间的多个低载流子浓度区域 源电极和半导体层之间以及在漏极和半导体层之间，设置在半导体层上的栅极绝缘层和设置在栅极绝缘层上的栅电极。

公开(公告)号：US12185604B2

公开(公告)日：2024-12-31

申请号：US17743424

申请日：2022-05-12

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Joohee Jeon ,  Sanggun Choi

IPC: H01L27/32 ,  H10K59/124 ,  H10K59/131 ,  H10K59/13

Abstract: A display apparatus for displaying a high-resolution image and having a low occurrence rate of defects caused by a voltage drop. The display apparatus includes a substrate, a first conductive layer arranged on the substrate and including an auxiliary data line extending in a first direction, a first semiconductor layer arranged on the first conductive layer, a first gate layer arranged on the first semiconductor layer, a first connection electrode layer arranged on the first gate layer and including a first connection electrode electrically connected to the first semiconductor layer and the auxiliary data line, and a second connection electrode layer arranged on the first connection electrode layer and including a data line electrically connected to the first connection electrode.

公开(公告)号：US11423839B2

公开(公告)日：2022-08-23

申请号：US17264703

申请日：2019-03-29

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yongsu Lee

IPC: G09G3/3258 ,  G09G3/3233 ,  G09G3/3225

Abstract: A display device may include a substrate, an organic light emitting element on the substrate, a pixel circuit between the substrate and the organic light emitting element, electrically connected to the organic light emitting element, and including a first transistor and a second transistor, a first metal layer between the substrate and the pixel circuit, overlapping the first transistor, and configured to receive a first voltage, and a second metal layer between the substrate and the pixel circuit, overlapping the second transistor, and configured to receive a second voltage different from the first voltage.

公开(公告)号：US10755639B2

公开(公告)日：2020-08-25

申请号：US16381491

申请日：2019-04-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yong Su Lee

IPC: G09G3/3233

Abstract: A pixel unit of a display device including: an OLED; a first transistor including a first electrode connected to a first node, a second electrode connected to a second node, and a third electrode connected to a third node; a capacitor including a first electrode receiving a power voltage and a second electrode connected to the first node; a second transistor including a first electrode receiving a scan signal, a second electrode receiving a data voltage and a third electrode connected to the second node; a third transistor including a first electrode receiving the scan signal, a second electrode connected to the first node and a third electrode connected to the third node, wherein at least one of the first and third transistors includes a fourth electrode, the fourth electrode receives a compensation voltage when an operation temperature is above a preset temperature and is floated when the operation temperature is equal to or more than the preset temperature.

公开(公告)号：US09437624B2

公开(公告)日：2016-09-06

申请号：US14689927

申请日：2015-04-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Dongjo Kim ,  Yoonho Khang ,  Myounghwa Kim ,  Kyoungwon Lee

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1255 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

Abstract: A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Abstract translation: 薄膜晶体管（TFT）基板，包括TFT基板的平面显示装置，TFT基板的制造方法以及制造平面显示装置的方法，所述薄膜晶体管（TFT）基板包括基板; 在所述基板上的第一栅电极，所述第一栅极包括彼此间隔开的第一分支电极和第二分支电极; 在所述第一栅电极上并与所述第一栅电极绝缘的多晶硅层; 以及在所述多晶硅层上的第二栅电极，所述第二栅电极与所述多晶硅层绝缘并且覆盖所述第一和第二分支电极。

公开(公告)号：US20160148986A1

公开(公告)日：2016-05-26

申请号：US14919666

申请日：2015-10-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungwon Lee ,  Yoonho Khang ,  Myounggeun Cha ,  Youngki Shin ,  Woonghee Jeong

IPC: H01L27/32 ,  G09G3/32 ,  H01L51/00 ,  H01L29/786 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2300/0842 ,  H01L27/3265 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696

Abstract: A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

Abstract translation: 一种晶体管，包括在基底衬底上的多晶硅层，并且包括沟道区，第一离子掺杂区，第二离子掺杂区，沟道区在第一和第二离子掺杂区之间，沟道中的晶粒的平均尺寸 区域大于第一和第二离子掺杂区域中的晶粒的区域，与沟道区域绝缘并且与沟道区域重叠的第一栅极电极，与第一栅电极绝缘并与沟道区域重叠的第二栅极电极，绝缘层 在所述第二栅电极上，在所述绝缘层上并连接到所述第一离子掺杂区的源电极和所述绝缘层上的漏极连接到所述第二离子掺杂区。

公开(公告)号：US20210320278A1

公开(公告)日：2021-10-14

申请号：US17092568

申请日：2020-11-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yungbin Chung ,  Sanggun Choi ,  Yeoungkeol Woo ,  Myounggeun Cha ,  Eunjin Kwak

IPC: H01L51/52 ,  H01L51/56 ,  H01L29/786

Abstract: A display apparatus includes a first substrate, a main pixel circuit located on the first substrate and including a first semiconductor layer, an auxiliary pixel circuit located on the first substrate and including a second semiconductor layer, a buffer layer located between the first substrate and the first semiconductor layer and between the first substrate and the second semiconductor layer, and a barrier layer located between the first substrate and the buffer layer, including one material from among silicon nitride (SiNx), aluminum oxide (Al2O3), and zirconium oxide (Zr2O3), and having a density ranging from about 2 g/cm3 to about 6 g/cm3.