公开(公告)号：US20140029334A1

公开(公告)日：2014-01-30

申请号：US13561478

申请日：2012-07-30

Applicant: Romney R. Katti ,  Michael A. Smith

Inventor： Romney R. Katti ,  Michael A. Smith

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1697 ,  G11C29/04

Abstract: A magnetic field sensing system includes one or more magnetoresistive random access memory (MRAM) cells, and may be configured to determine one or more of a presence, a magnitude, and a polarity of an external magnetic field incident upon an MRAM cell. In some examples, a control module of the system controls a write current source, or another device, to provide a write current through a write line associated with the MRAM cell to induce a magnetic field proximate to the MRAM cell. The magnetic field may be less than a magnetic switching threshold of the MRAM cell. After initiating the provision of the write current through the write line, the control module may determine a magnetic state of the MRAM cell, and determine a presence of an external magnetic field incident upon the MRAM cell based at least in part on the magnetic state of the MRAM cell.

Abstract translation: 磁场感测系统包括一个或多个磁阻随机存取存储器（MRAM）单元，并且可以被配置为确定入射到MRAM单元上的外部磁场的存在，大小和极性中的一个或多个。 在一些示例中，系统的控制模块控制写入电流源或另一个器件，以通过与MRAM单元相关联的写入线提供写入电流，以引导靠近MRAM单元的磁场。 磁场可能小于MRAM单元的磁切换阈值。 在开始通过写入线提供写入电流之后，控制模块可以确定MRAM单元的磁状态，并且至少部分地基于MRAM单元的磁状态来确定入射到MRAM单元上的外部磁场的存在 MRAM单元。

公开(公告)号：US20130250663A1

公开(公告)日：2013-09-26

申请号：US13429761

申请日：2012-03-26

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/16

CPC classification number: H01L23/576 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/00

Abstract: A system may include circuitry and a magnetoresistive random access memory (MRAM) die including at least one MRAM cell. The circuitry may be configured to detect attempted tampering with the MRAM die and generate a signal based on the detected attempted tampering. The signal may be sufficient to damage or destroy at least one layer of the at least one MRAM cell or a fuse electrically connected to a read line of the at least one MRAM cell.

Abstract translation: 系统可以包括电路和包括至少一个MRAM单元的磁阻随机存取存储器（MRAM）管芯。 电路可以被配置为检测对MRAM管芯的尝试篡改，并且基于检测到的尝试篡改产生信号。 所述信号可能足以损坏或破坏所述至少一个MRAM单元的至少一层或电连接到所述至少一个MRAM单元的读取线的保险丝。

公开(公告)号：US08427197B2

公开(公告)日：2013-04-23

申请号：US13161070

申请日：2011-06-15

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: H03K17/16 ,  H03K19/003

CPC classification number: H03K19/16

Abstract: This disclosure is directed to techniques for generating a reference current based on a combinational logic function that is to be performed by a magnetic logic device. A comparator circuit may compare an amplitude of a read current that flows through the magnetic logic device and the reference current to generate a logic output value that corresponds to the logic output value when combinational logic function is applied to the input values. By selecting appropriate amplitudes for the reference current the magnetic logic device may be caused to implement different combinational logic functions.

Abstract translation: 本公开涉及用于基于将由磁逻辑器件执行的组合逻辑功能来产生参考电流的技术。 比较器电路可以比较流过磁逻辑器件的读取电流的幅度和参考电流，以便当将组合逻辑功能应用于输入值时产生对应于逻辑输出值的逻辑输出值。 通过为参考电流选择适当的幅度，可以使磁逻辑器件实现不同的组合逻辑功能。

公开(公告)号：US08358149B2

公开(公告)日：2013-01-22

申请号：US12916119

申请日：2010-10-29

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: H03K19/173

CPC classification number: H03K19/16 ,  G11C11/161 ,  H03K19/195

Abstract: This disclosure is directed to a magnetic logic device for implementing a combinational logic function. The magnetic logic device may include a chain of at least two magnetoresistive devices electrically coupled in series comprising a first terminal located at a first end of the chain and a second terminal located at a second end of the chain. The magnetic logic device may further include a voltage source configured to apply a voltage between the first terminal and the second terminal of the chain of at least two magnetoresistive devices electrically coupled in series. The magnetic logic device may further include a logic output generator configured to generate a logic output value for a logic function based on a magnitude of a current produced at the second terminal of the chain in response to the applied voltage.

Abstract translation: 本公开涉及用于实现组合逻辑功能的磁逻辑器件。 磁逻辑器件可以包括串联电耦合的至少两个磁阻器件的链，包括位于链的第一端的第一端子和位于链的第二端的第二端子。 磁逻辑器件还可以包括电压源，其被配置为在串联电耦合的至少两个磁阻器件的链的第一端子和第二端子之间施加电压。 磁逻辑器件还可以包括逻辑输出发生器，其被配置为基于响应于所施加的电压在链的第二端产生的电流的大小来产生逻辑功能的逻辑输出值。

公开(公告)号：US20120242416A1

公开(公告)日：2012-09-27

申请号：US13070249

申请日：2011-03-23

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: H01S1/00 ,  H01F41/14 ,  H01F41/22 ,  H01F1/01

CPC classification number: H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

Abstract: A magnetic device is provided in one example that comprises a free layer having a magnetic anisotropy. The magnetic anisotropy is at least partially non-uniform. The magnetic device further comprises an antiferromagnetic layer adjacent to and weakly exchange coupled with the free layer, wherein the weak exchange coupling reduces the non-uniformity of the magnetic anisotropy of the free layer.

Abstract translation: 在包括具有磁各向异性的自由层的一个实例中提供磁性装置。 磁各向异性至少部分不均匀。 磁性装置还包括与自由层相邻并且弱交换的反铁磁层，其中弱交换耦合减小了自由层的磁各向异性的不均匀性。

公开(公告)号：US20120105103A1

公开(公告)日：2012-05-03

申请号：US12916174

申请日：2010-10-29

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: H03K19/173

CPC classification number: H03K19/16 ,  H03K19/168

Abstract: This disclosure is directed to a magnetic logic device for implementing a combinational logic function. The magnetic logic device may include a network of at least two magnetoresistive devices electrically coupled in parallel. The magnetic logic device may further include a voltage source configured to apply a voltage between a first terminal and a second terminal of the network of at least two magnetoresistive devices electrically coupled in parallel. The magnetic logic device may further include a logic output generator configured to generate a logic output value for a logic function based on a magnitude of a current produced at the second terminal of the network in response to the applied voltages.

Abstract translation: 本公开涉及用于实现组合逻辑功能的磁逻辑器件。 磁逻辑器件可以包括并联电耦合的至少两个磁阻器件的网络。 磁逻辑器件还可以包括被配置为在电耦合并联的至少两个磁阻器件的网络的第一端子和第二端子之间施加电压的电压源。 磁逻辑器件还可包括逻辑输出发生器，该逻辑输出发生器被配置为响应于所施加的电压，基于在网络的第二终端处产生的电流的幅度来产生用于逻辑功能的逻辑输出值。

公开(公告)号：US20110316129A1

公开(公告)日：2011-12-29

申请号：US12861442

申请日：2010-08-23

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: H01L23/58

CPC classification number: H05K9/0075 ,  H01L23/552 ,  H01L24/49 ,  H01L2224/49109 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/15156 ,  H01L2924/16195 ,  H05K9/0088 ,  H01L2224/45099

Abstract: A magnetic shield is presented. The shield may be used to protect a microelectronic device from stray magnetic fields. The shield includes at least two layers. A first layer includes a magnetic material that may be used to block DC magnetic fields. A second layer includes a conductive material that may be used to block AC magnetic fields. Depending on the type of material that the first and second layers include, a third layer may be inserted in between the first and second layers. The third layer may include a non-conductive material that may be used to ensure that separate eddy current regions form in the first and second layers.

Abstract translation: 提供磁屏蔽。 屏蔽可用于保护微电子器件免受杂散磁场的影响。 屏蔽层至少包括两层。 第一层包括可用于阻挡直流磁场的磁性材料。 第二层包括可用于阻挡交流磁场的导电材料。 根据第一和第二层包括的材料的类型，第三层可以插入在第一层和第二层之间。 第三层可以包括非导电材料，其可用于确保在第一层和第二层中形成单独的涡流区。

公开(公告)号：US07539047B2

公开(公告)日：2009-05-26

申请号：US11745903

申请日：2007-05-08

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: G11C11/00

CPC classification number: G11C11/5607 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: An improved MRAM cell may include a first, second, and third contact, a first MTJ between the first and second contact, and a MTJ between the second and third contact. The MRAM cell is nonconductive between the first and second MTJ. The first MTJ may include a first free layer with a first switching field, and the second MTJ may include a second free layer with a second switching field. If the first switching field is substantially higher than the second switching field, the first MTJ may be a reference element for the second MTJ. If the first switching field is adequately higher than the second switching field, the first and second MTJ may each contain a data bit. If the first switching field is substantially similar to the second switching field, the first and second MTJs may contain identical data bits connected in series.

Abstract translation: 改进的MRAM单元可以包括第一，第二和第三触点，第一和第二触点之间的第一MTJ以及第二和第三触点之间的MTJ。 MRAM单元在第一和第二MTJ之间是非导通的。 第一MTJ可以包括具有第一开关场的第一自由层，并且第二MTJ可以包括具有第二开关场的第二自由层。 如果第一开关场基本上高于第二开关场，则第一MTJ可以是第二MTJ的参考元件。 如果第一开关场足够高于第二开关场，则第一和第二MTJ可以各自包含数据位。 如果第一开关场基本上类似于第二开关场，则第一和第二MTJ可以包含串联连接的相同的数据位。

公开(公告)号：US07425456B2

公开(公告)日：2008-09-16

申请号：US11209120

申请日：2005-08-22

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: H01L43/00 ,  G11B5/33

CPC classification number: G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/39 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08

Abstract: A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage layer. The antiferromagnetic layer couples magnetically in a controlled manner to the magnetic storage layer such that the magnetic storage layer has uniform and/or directional magnetization. Additionally or alternatively, an antiferromagnetic layer may be formed in proximity to the magnetic sense layer. The antiferromagnetic layer in proximity to the magnetic sense layer couples magnetically in a controlled manner to the magnetic sense layer such that the magnetic sense layer has uniform and/or directional magnetization.

Abstract translation: 巨磁阻存储器件包括磁感测层，磁存储层，磁感应层和磁存储层之间的非磁性间隔层，以及在磁存储层附近形成的反铁磁层。 反铁磁层以受控的方式磁耦合到磁存储层，使得磁存储层具有均匀和/或定向磁化。 附加地或替代地，反铁磁层可以形成在磁感应层附近。 靠近磁感测层的反铁磁层以受控的方式磁耦合到磁感应层，使得磁感应层具有均匀和/或定向磁化。

公开(公告)号：US20070278628A1

公开(公告)日：2007-12-06

申请号：US11445874

申请日：2006-06-02

Applicant: Romney R. Katti

Inventor： Romney R. Katti

IPC: H01L23/552

CPC classification number: H05K9/0075 ,  H01L23/552 ,  H01L24/49 ,  H01L2224/49109 ,  H01L2924/00014 ,  H01L2924/0102 ,  H01L2924/15156 ,  H01L2924/16195 ,  H05K9/0088 ,  H01L2224/45099

Abstract: A magnetic shield is presented. The shield may be used to protect a microelectronic device from stray magnetic fields. The shield includes at least two layers. A first layer includes a magnetic material that may be used to block DC magnetic fields. A second layer includes a conductive material that may be used to block AC magnetic fields. Depending on the type of material that the first and second layers include, a third layer may be inserted in between the first and second layers. The third layer may include a non-conductive material that may be used to ensure that separate eddy current regions form in the first and second layers.

Abstract translation: 提供磁屏蔽。 屏蔽可用于保护微电子器件免受杂散磁场的影响。 屏蔽层至少包括两层。 第一层包括可用于阻挡直流磁场的磁性材料。 第二层包括可用于阻挡交流磁场的导电材料。 根据第一和第二层包括的材料的类型，第三层可以插入在第一层和第二层之间。 第三层可以包括非导电材料，其可用于确保在第一层和第二层中形成单独的涡流区。