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公开(公告)号：US6055255A
公开(公告)日：2000-04-25
申请号：US790815
申请日：1997-01-30
CPC分类号： H01S5/2231 , H01S5/0601 , H01S5/0658 , H01S5/2219
摘要： A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.
摘要翻译： 半导体激光器件包括：第一导电类型的半导体衬底; 包括至少第一导电类型的第一包层，有源层和第二导电类型的第二包层的层状结构。 层状结构设置在半导体基板上。 半导体激光装置还包括：形成在层状结构上的具有条纹凹部的电流阻挡结构; 以及第二导电类型的第三包覆层，以覆盖条纹凹部和电流阻挡结构。 电流阻挡结构至少包括具有禁带宽度的可饱和吸收层，其基本上等于有源层的禁带宽度。
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公开(公告)号：US6023484A
公开(公告)日：2000-02-08
申请号：US694594
申请日：1996-08-09
CPC分类号： H01S5/2231 , H01S5/2206 , H01S5/3054
摘要： The semiconductor laser device of the invention includes: an n-type semiconductor and a semiconductor multi-layer structure formed on the n-type semiconductor. The semiconductor multi-layer structure includes: an active layer; an n-type first cladding layer and a p-type second cladding layer which are disposed so as to sandwich the active layer therebetween; an n-type current/light confinement layer having a stripe-shaped groove portion for injecting a current into a selected region of the active layer; and a p-type third cladding layer formed so as to bury the stripe-shaped groove portion of the n-type current/light confinement layer. In the semiconductor laser device, the current/light confinement layer contains Si as a dopant and the n-type first cladding layer contains substantially no Si as a dopant.
摘要翻译： 本发明的半导体激光器件包括n型半导体和形成在n型半导体上的半导体多层结构。 半导体多层结构包括：有源层; n型第一包层和p型第二包覆层，以将活性层夹在其间; n型电流/光限制层，其具有用于将电流注入到所述有源层的选定区域中的条形槽部; 以及形成为埋入n型电流/光限制层的条形槽部的p型第三覆层。 在半导体激光装置中，电流/光限制层含有Si作为掺杂剂，n型第一包层基本上不含Si作为掺杂剂。
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3.发明授权Optical information reproduction apparatus having a semiconductor laser device light source 失效具有半导体激光装置光源的光信息再生装置
公开(公告)号：US5909425A
公开(公告)日：1999-06-01
申请号：US844278
申请日：1997-04-18
CPC分类号： G11B7/127 , H01S5/0658
摘要： An optical information reproduction apparatus includes a semiconductor laser device as a light source which provides oscillation as periodic pulse waves upon application of a DC current. The semiconductor laser device is disposed so that an optical distance L from a light-emitting point of the semiconductor laser device to a recording surface of an optical recording medium satisfies the following relationship: TP TP+(2L/C), where T is a period of pulse waves which are output from the semiconductor laser device in absence of a returning light from the optical recording medium; TP is a pulse width of the respective pulse waves which is defined as a width of a portion of the respective pulse waves, the portion having intensities which correspond to 10% or more of the peak intensity of the respective pulse waves; and C is a speed of light through air.
摘要翻译： 光信息再现装置包括作为在施加直流电流时作为周期性脉冲波提供振荡的光源的半导体激光装置。 半导体激光器件被设置为使得从半导体激光器件的发光点到光记录介质的记录表面的光学距离L满足以下关系：TP <（4L / C）和T> TP +（2L / C），其中T是在不存在来自光记录介质的返回光的情况下从半导体激光器件输出的脉冲周期; TP是各个脉波的脉冲宽度，其被定义为各个脉冲波的一部分的宽度，该部分的强度对应于各个脉冲波的峰值强度的10％以上; C是通过空气的光速。
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公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.
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公开(公告)号：US08897686B2
公开(公告)日：2014-11-25
申请号：US13612284
申请日：2012-09-12
IPC分类号： G03G15/20
CPC分类号： G03G15/2053 , G03G2215/2029
摘要： A fixing device includes a heat assembly including an endless belt, a heat source, an attachment member having an attachment surface and first and second side surfaces, and a slide sheet having first and second end portions that are respectively fixed to a first fixing portion at the first side surface and a second fixing portion at the second side surface, the slide sheet having a larger length from the first end portion to the second end portion than a length of a path of the attachment member extending from the first fixing portion to the second fixing portion through the first side surface, the attachment surface, and the second side surface; and a pressure roller that presses the outer surface of the endless belt to the attachment surface.
摘要翻译： 一种固定装置，包括一个包括环形带，热源，具有附接表面的附接构件和第一和第二侧表面的热组件，以及具有分别固定到第一固定部分上的第一和第二端部的滑动片 所述第一侧表面和所述第二固定部分在所述第二侧表面处，所述滑动片具有从所述第一端部到所述第二端部的长度大于所述附接构件从所述第一固定部延伸到所述第二固定部的路径的长度 通过第一侧表面，附接表面和第二侧表面的第二固定部分; 以及将环形带的外表面按压到附接表面的压力辊。
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公开(公告)号：US08491335B2
公开(公告)日：2013-07-23
申请号：US13259881
申请日：2010-03-23
IPC分类号： H01R13/52
CPC分类号： H01R13/5208 , H01R13/506 , H01R13/58 , H01R2201/26
摘要： There is provided a waterproof connector in which swing of electric wires inside a rear holder can be prevented, and insertion of the rear holder into a connector body can be easily performed with a small force. The waterproof connector includes a connector body 2 having a terminal containing room 21 in which a terminal metal fitting 9 of an electric wire 7 is contained, a waterproof plug 3 which is fitted to the electric wire 7 at a wire withdrawing side 23 of the connector body 2 and assembled to the wire withdrawing side 23 of the connector body 2, and a rear holder 5 which is mounted on the wire withdrawing side 23 of the connector body 2 thereby to prevent drop of the waterproof plug 3 from the connector body 2. The rear holder includes a pair of half bodies which are separated as a first holder body 51 and a second holder body 52, wire containing recesses 53, 54 which contain respective semi-circular portions of the electric wire are respectively formed in the first holder body 51 and the second holder body 52, and the first holder body 51 and the second holder body 52 are individually mounted on the wire withdrawing side 23 of the connector body 2 to be combined together.
摘要翻译： 提供了一种防水连接器，其中可以防止后保持器内的电线的摆动，并且能够以较小的力容易地进行后保持器插入连接器主体中。 防水连接器包括具有端子容纳室21的连接器主体2，其中容纳有电线7的端子金属配件9;防水插头3，其在连接器的拔线侧23处装配到电线7 主体2并组装到连接器主体2的引线侧23，以及安装在连接器主体2的拔线侧23上的后保持器5，从而防止防水插头3从连接器主体2掉落。 后保持器包括一对半体，其被分离为第一保持器主体51和第二保持器主体52，包含凹槽53,54的电线的各自的半圆形部分的电线分别形成在第一保持器主体中 51和第二保持器主体52以及第一保持器主体51和第二保持器主体52分别安装在连接器主体2的引线抽出侧23上以组合在一起。
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公开(公告)号：US08430696B2
公开(公告)日：2013-04-30
申请号：US12991458
申请日：2009-08-21
IPC分类号： H01R13/40
CPC分类号： H01R13/4367 , H01R13/426 , H01R13/5205 , H01R13/521
摘要： A connector includes: a terminal fitting which includes a wire connecting portion and an electric contact portion disposed coaxially with the wire connecting portion; a connector housing for fitting to a mating connector; a rear holder which is fitted at an end portion of the connector housing; a terminal accommodating chamber which is provided in the connector housing. The terminal accommodating chamber includes a first accommodating portion for accommodating the wire connecting portion, a second accommodating portion which is continuous with the first accommodating portion to accommodate the electric contact portion, and a stepped surface formed between the first and second accommodating portions. The connector also includes a flange portion which projects from an outer peripheral surface of the wire connecting portion so as to contact the stepped surface, and a sleeve member provided between the flange portion and the rear holder.
摘要翻译： 连接器包括：端子接头，其包括电线连接部分和与电线连接部分同轴设置的电接触部分; 用于配合到配合连接器的连接器壳体; 一个后座，其安装在连接器壳体的端部; 设置在连接器壳体中的端子容纳室。 端子容纳室包括用于容纳电线连接部分的第一容纳部分，与第一容纳部分连续以容纳电接触部分的第二容纳部分，以及形成在第一和第二容纳部分之间的台阶表面。 连接器还包括从电线连接部分的外周表面突出以接触台阶表面的凸缘部分和设置在凸缘部分和后保持器之间的套筒部件。
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公开(公告)号：US08336834B2
公开(公告)日：2012-12-25
申请号：US13000584
申请日：2009-06-19
IPC分类号： F16L3/08
CPC分类号： F16L3/1222 , F16L33/03 , H02G3/30 , Y10T24/1457
摘要： Provided is an electrical wire fixing member that can be assembled in a simple manner with the reduced number of parts, and is capable of obtaining a sufficient lap amount, which can further reduce the number of parts. In an electrical wire fixing band 1 that secures an electrical wire 20, the first flange 3 is provided at a tip of the one end 2a of the body 2 in a shape of a ring, with both ends overlapping with each other along the circumference of the body. A second flange 4 is provided at the other end 2b. A protruding piece 5 is provided in a direction where the other end 2b becomes more distant from the one end 2a. A locking piece 6 is provided closer to the one end than the tip of the other end 2b is.
摘要翻译： 本发明提供一种电线固定构件，其能够以简单的方式组装，并且能够获得足够的搭接量，从而可以进一步减少零件数量。 在固定电线20的电线固定带1中，第一凸缘3设置在主体2的一端2a的尖端处的环形状，两端彼此沿着圆周方向重叠 身体。 第二凸缘4设置在另一端2b处。 在另一端2b变得远离一端2a的方向上设置有突出片5。 锁定片6设置成比另一端2b的前端更靠近一端。
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公开(公告)号：US20120266948A1
公开(公告)日：2012-10-25
申请号：US13523323
申请日：2012-06-14
申请人： Kazuya Murata , Mitsuhiro Matsumoto
发明人： Kazuya Murata , Mitsuhiro Matsumoto
IPC分类号： H01L31/077 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/077 , Y02E10/50
摘要： In order to increase photoelectric conversion efficiency in a photoelectric conversion device, there is disclosed a photoelectric converter containing a photoelectric conversion unit in which a p-type layer (40) containing a p-type dopant, an i-type layer (42) that is a microcrystalline silicon layer that is an electricity-generating layer, and an n-type layer (44) containing an n-type dopant are layered, wherein the p-type layer (40) is caused to have a layered structure comprising a first p-type layer (40a) that is a microcrystalline silicon layer, and a second p-type layer (40b) containing at least one of an amorphous silicon carbide p-type layer and an amorphous silicon p-type layer disclosed between the microcrystalline silicon p-type layer (40a) and the i-type layer (42). The second p-type layer (40b) is provided with an oxide layer on the side of the i-type layer (42).
摘要翻译： 为了提高光电转换元件的光电转换效率，公开了一种光电转换器，其包含光电转换单元，其中包含p型掺杂剂的p型层（40），i型层（42）， 是作为发电层的微晶硅层，并且层叠含有n型掺杂剂的n型层（44），其中使p型层（40）具有层状结构，其包括第一 作为微晶硅层的p型层（40a）和包含微晶硅之间公开的非晶质碳化硅p型层和非晶硅p型层中的至少一种的第二p型层（40b） p型层（40a）和i型层（42）。 第二p型层（40b）在i型层（42）侧设置有氧化物层。
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公开(公告)号：US20120145239A1
公开(公告)日：2012-06-14
申请号：US13391570
申请日：2010-11-24
申请人： Toshie Kunii , Mitsuhiro Matsumoto
发明人： Toshie Kunii , Mitsuhiro Matsumoto
IPC分类号： H01L31/036 , H01L31/0352
CPC分类号： H01L31/03685 , C23C16/24 , C23C16/52 , H01L21/02422 , H01L21/0243 , H01L21/02491 , H01L21/02532 , H01L21/02573 , H01L21/02595 , H01L21/0262 , H01L31/03762 , H01L31/075 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device is provided wherein variance of photoelectric conversion efficiency within a panel plane is reduced. A method of manufacturing a photoelectric conversion device having a microcrystalline silicon photoelectric conversion unit (104) which has a layered structure including a p-type layer (40), an i-type layer (42) including a microcrystalline silicon layer which serves as a power generating layer, and an n-type layer (44) is provided, the method comprising a step of forming the i-type layer (42), wherein a first i-type layer (42a) is formed and a second i-type layer (42b) is formed over the first i-type layer (42a) under a condition that a crystallization percentage is higher than that of the first i-type layer (42a) and an in-plane distribution of the crystallization percentage is lower than that of the first i-type layer.
摘要翻译： 提供一种光电转换装置，其中面板平面内的光电转换效率的变化减小。 一种制造具有微晶硅光电转换单元（104）的光电转换装置的方法，该微结晶硅光电转换单元具有包括p型层（40），i型层（42）的层状结构，该i型层包括微晶硅层 提供发电层和n型层（44），所述方法包括形成i型层（42）的步骤，其中形成第一i型层（42a）和形成第二i型层 在第一i型层（42a）上形成层（42b），其结晶比例高于第一i型层（42a）的结晶百分率，并且结晶化率的面内分布低于 第一个i型层的。
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