STACKED GRATINGS FOR OPTICAL EMITTERS
    1.
    发明公开

    公开(公告)号:US20240014633A1

    公开(公告)日:2024-01-11

    申请号:US17935790

    申请日:2022-09-27

    CPC classification number: H01S5/18361 H01S5/18313 H01S2304/04

    Abstract: Some implementations described herein may provide an optical device. The optical device may include an optical emitter and an optical element aligned to the optical emitter. The optical element may include an oxidation aperture, one or more distributed Bragg reflectors (DBRs) disposed on the oxidation aperture, and a stacked periodic grating structure disposed on the one or more DBRs. The stacked periodic grating structure may include a set of layers. The set of layers may include alternating layers of a first material and a second material. The stacked periodic grating structure may have a selected period, depth, and fill factor that are selected to achieve greater than a threshold level of optical field confinement in a transverse direction of an optical field emitted by the optical emitter.

    VERTICAL CAVITY SURFACE EMITTING LASER WITH ENHANCED MODULATION BANDWIDTH

    公开(公告)号:US20240136794A1

    公开(公告)日:2024-04-25

    申请号:US18067296

    申请日:2022-12-16

    CPC classification number: H01S5/18327 H01S5/18369

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate having a first side and a second side, a first mirror disposed to the first side of the substrate, a second mirror disposed to the first side of the substrate and defining a first optical cavity between the first mirror and the second mirror, an active region between the first mirror and the second mirror, and a third mirror defining a second optical cavity. The VCSEL may be configured to generate a primary optical mode and a secondary optical mode under direct modulation. The second optical cavity may be configured to resonate the secondary optical mode.

    MATRIX ADDRESSABLE VERTICAL CAVITY SURFACE EMITTING LASER ARRAY

    公开(公告)号:US20220344909A1

    公开(公告)日:2022-10-27

    申请号:US17538592

    申请日:2021-11-30

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) array may include a substrate. In some implementations, the VCSEL array may include a set of cathodes disposed on the substrate in a first direction, wherein a cathode, of the set of cathodes, is defined by a serpentine shape. In some implementations, the VCSEL array may include a set of anodes disposed on the substrate in a second direction, wherein an anode, of the set of anodes, is defined by the serpentine shape.

    STRAIN POLARIZED VERTICAL CAVITY SURFACE EMITTING LASER

    公开(公告)号:US20230344198A1

    公开(公告)日:2023-10-26

    申请号:US17809948

    申请日:2022-06-30

    CPC classification number: H01S5/18355 H01S5/18375

    Abstract: In some implementations, an emitter device includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include a first mirror, a second mirror, and an active layer between the first mirror and the second mirror. The epitaxial layers may include at least one oxidation layer including a first oxidized region and a second oxidized region separate from the first oxidized region. The first oxidized region and the second oxidized region may be configured to provide a strain on the epitaxial layers that is radially asymmetric. The epitaxial layers may include a set of oxidation trenches in the set of epitaxial layers to expose the at least one oxidation layer.

    MODE-DISCRIMINATING EMITTER DEVICE WITH AN ACTIVE EMITTER AND A PASSIVE EMITTER

    公开(公告)号:US20230238778A1

    公开(公告)日:2023-07-27

    申请号:US17654655

    申请日:2022-03-14

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

    VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH CURRENT-BLOCKING REFLECTOR

    公开(公告)号:US20250125586A1

    公开(公告)日:2025-04-17

    申请号:US18536467

    申请日:2023-12-12

    Abstract: An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.

    PLATED TRENCH FOR PARASITIC CAPACITANCE CONTROL OF VERTICAL CAVITY SURFACE EMITTING LASER DEVICES

    公开(公告)号:US20240348014A1

    公开(公告)日:2024-10-17

    申请号:US18336546

    申请日:2023-06-16

    CPC classification number: H01S5/18311 H01S5/042 H01S5/18322 H01S5/18347

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) minor; a second DBR minor arranged on the first DBR mirror; an active layer arranged between the first DBR mirror and the second DBR mirror; and an oxidation layer arranged between the active layer and the second DBR mirror. The oxidation layer comprises an oxide aperture formed through the oxidation layer. A plurality of segmented oxidation trenches are arranged around an area in which the oxide aperture is formed and extend into the stacked structure to expose the oxidation layer for oxidation that forms the oxide aperture. A plurality of plating islands are spatially separated from each other. Each plating island vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer.

    VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH DUAL WAVELENGTH BANDS

    公开(公告)号:US20250007247A1

    公开(公告)日:2025-01-02

    申请号:US18478677

    申请日:2023-09-29

    Inventor: Yeyu ZHU Jun YANG

    Abstract: A dual-emission-wavelength vertical-cavity surface-emitting laser (VCSEL) device includes a substrate layer; a first distributed Bragg reflector (DBR) arranged on the substrate layer and being based on a first wavelength, a second DBR arranged on the first DBR and being based on a second wavelength that is different from the first wavelength, a third DBR arranged on the second DBR and being based on a third wavelength that is different from the first and the second wavelengths; a first active layer configured to generate a first laser light at a first emission wavelength and being arranged between the first DBR and the second DBR; and a second active layer configured to generate a second laser light at a second emission wavelength that is different from the first emission wavelength and being arranged between the second DBR and the third DBR.

    MATRIX ADDRESSABLE VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY

    公开(公告)号:US20240283218A1

    公开(公告)日:2024-08-22

    申请号:US18315400

    申请日:2023-05-10

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) array may include a substrate, a wafer bonding layer over the substrate, and a first metal layer on or within the wafer bonding layer. The first metal layer may include a plurality of first electrodes. The VCSEL array may include an epitaxial region over the first metal layer and the wafer bonding layer. The epitaxial region may be bonded to the wafer bonding layer. The VCSEL array may include a second metal layer over the epitaxial region. The second metal layer may include a plurality of second electrodes. The plurality of first electrodes and the plurality of second electrodes may form a plurality of matrix addressable subarrays of the VCSEL array, where each matrix addressable subarray of the plurality of matrix addressable subarrays includes one or more emitters.

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