MODE-DISCRIMINATING EMITTER DEVICE WITH AN ACTIVE EMITTER AND A PASSIVE EMITTER

    公开(公告)号:US20230238778A1

    公开(公告)日:2023-07-27

    申请号:US17654655

    申请日:2022-03-14

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

    EMITTER WITH AN OXIDE-LAYER-BASED REFLECTOR PAIR

    公开(公告)号:US20230261441A1

    公开(公告)日:2023-08-17

    申请号:US17656303

    申请日:2022-03-24

    CPC classification number: H01S5/18311 H01S5/18377 H01S5/18394 H01S5/2086

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a set of epitaxial layers disposed on the substrate layer. The set of epitaxial layers may include a first mirror and a second mirror. At least one of the first mirror or the second mirror may include at least one reflector pair that includes a semiconductor material layer and an oxidized semiconductor material layer. The set of epitaxial layers may include an oxidation trench axially extending into at least the second mirror, an active region between the first mirror and the second mirror, and an oxidation layer with an oxidation aperture.

    STACKED GRATINGS FOR OPTICAL EMITTERS
    3.
    发明公开

    公开(公告)号:US20240014633A1

    公开(公告)日:2024-01-11

    申请号:US17935790

    申请日:2022-09-27

    CPC classification number: H01S5/18361 H01S5/18313 H01S2304/04

    Abstract: Some implementations described herein may provide an optical device. The optical device may include an optical emitter and an optical element aligned to the optical emitter. The optical element may include an oxidation aperture, one or more distributed Bragg reflectors (DBRs) disposed on the oxidation aperture, and a stacked periodic grating structure disposed on the one or more DBRs. The stacked periodic grating structure may include a set of layers. The set of layers may include alternating layers of a first material and a second material. The stacked periodic grating structure may have a selected period, depth, and fill factor that are selected to achieve greater than a threshold level of optical field confinement in a transverse direction of an optical field emitted by the optical emitter.

    TAPERED-MESA VERTICAL CAVITY SURFACE EMITTING LASER

    公开(公告)号:US20250079797A1

    公开(公告)日:2025-03-06

    申请号:US18545939

    申请日:2023-12-19

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate, a first mirror on the substrate, an active region on the first mirror, and a second mirror on the active region. The second mirror may include a plurality of reflector layers. A mesa may be defined in the second mirror. The mesa may taper out from a top surface of the mesa to a periphery of the mesa. A quantity of reflector layers, of the plurality of reflector layers, in sections of the mesa may decrease from a central section of the mesa, underneath the top surface, to the periphery of the mesa.

    VERTICAL CAVITY SURFACE EMITTING LASER WITH ENHANCED MODULATION BANDWIDTH

    公开(公告)号:US20240136794A1

    公开(公告)日:2024-04-25

    申请号:US18067296

    申请日:2022-12-16

    CPC classification number: H01S5/18327 H01S5/18369

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate having a first side and a second side, a first mirror disposed to the first side of the substrate, a second mirror disposed to the first side of the substrate and defining a first optical cavity between the first mirror and the second mirror, an active region between the first mirror and the second mirror, and a third mirror defining a second optical cavity. The VCSEL may be configured to generate a primary optical mode and a secondary optical mode under direct modulation. The second optical cavity may be configured to resonate the secondary optical mode.

    PLATED TRENCH FOR PARASITIC CAPACITANCE CONTROL OF VERTICAL CAVITY SURFACE EMITTING LASER DEVICES

    公开(公告)号:US20240348014A1

    公开(公告)日:2024-10-17

    申请号:US18336546

    申请日:2023-06-16

    CPC classification number: H01S5/18311 H01S5/042 H01S5/18322 H01S5/18347

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) minor; a second DBR minor arranged on the first DBR mirror; an active layer arranged between the first DBR mirror and the second DBR mirror; and an oxidation layer arranged between the active layer and the second DBR mirror. The oxidation layer comprises an oxide aperture formed through the oxidation layer. A plurality of segmented oxidation trenches are arranged around an area in which the oxide aperture is formed and extend into the stacked structure to expose the oxidation layer for oxidation that forms the oxide aperture. A plurality of plating islands are spatially separated from each other. Each plating island vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer.

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