PLATED TRENCH FOR PARASITIC CAPACITANCE CONTROL OF VERTICAL CAVITY SURFACE EMITTING LASER DEVICES

    公开(公告)号:US20240348014A1

    公开(公告)日:2024-10-17

    申请号:US18336546

    申请日:2023-06-16

    CPC classification number: H01S5/18311 H01S5/042 H01S5/18322 H01S5/18347

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) minor; a second DBR minor arranged on the first DBR mirror; an active layer arranged between the first DBR mirror and the second DBR mirror; and an oxidation layer arranged between the active layer and the second DBR mirror. The oxidation layer comprises an oxide aperture formed through the oxidation layer. A plurality of segmented oxidation trenches are arranged around an area in which the oxide aperture is formed and extend into the stacked structure to expose the oxidation layer for oxidation that forms the oxide aperture. A plurality of plating islands are spatially separated from each other. Each plating island vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer.

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