公开(公告)号：US20200154555A1

公开(公告)日：2020-05-14

申请号：US16223044

申请日：2018-12-17

Applicant: Industrial Technology Research Institute

Inventor： Chih-Yung Huang ,  Kuan-Chou Chen ,  Shih-Chin Lin ,  Yi-Jiun Lin ,  Ching-Chiun Wang

IPC: H05H1/00 ,  H05H1/24 ,  H04N5/247 ,  G06T7/246

Abstract: A flow field visualization device includes a chamber, a power supply, at least one pair of electrodes, and at least two high-speed cameras. The power supply outputs a voltage for plasma generation, and the pair of electrodes is disposed in the chamber. The pair of electrodes includes a first electrode and a second electrode. The first electrode has a plurality of first tips, the second electrode has a plurality of second tips, and the first tips and the second tips are aligned with each other. The pair of electrodes generates a periodically densely distributed plasma by exciting a gas in the chamber through the voltage from the power supply. The high-speed cameras are disposed outside the chamber and are positioned in different directions corresponding to the pair of electrodes in order to capture images of different dimensions.

公开(公告)号：US20250164981A1

公开(公告)日：2025-05-22

申请号：US18951650

申请日：2024-11-19

Applicant: Industrial Technology Research Institute

Inventor： Shih-Chin Lin ,  Wen-Jun Chen ,  Ching-Chiun Wang ,  Chih-Ming Ho ,  Da-Jeng Yao

IPC: G05B19/418 ,  C23C14/54 ,  C23C16/52

Abstract: An optimization method for a vacuum plating process includes following steps. A property of a thin film to be optimized is determined. According to the property of the thin film to be optimized, process parameters and a level of each of the process parameters are determined. M sets of experiments are designed, where M is a positive integer, M is positively related to a number of the process parameters, but M is not related to a number of the level of the process parameters. The M sets of experiments are performed to obtain M sets of test films and the property of each of the test films are measured or calculated. Process parameters used in the M sets of experiments and the property of the M sets of test films are fitted with a multi-dimensional quadratic transformation function to obtain a first fitting function. The first fitting function is dynamically modified using an iteration method to obtain a best fitting function. A multi-dimensional response surface diagram is illustrated using the best fitting function to determine an optimal process parameter combination.

公开(公告)号：US20210132104A1

公开(公告)日：2021-05-06

申请号：US16701073

申请日：2019-12-02

Applicant: Industrial Technology Research Institute

Inventor： Chih-Yung Huang ,  Yao-Hsien Liu ,  Kuan-Chou Chen ,  Yi-Jiun Lin ,  Shih-Chin Lin ,  Ching-Chiun Wang

IPC: G01P13/00

Abstract: A visualization device for a flow field includes a chamber, a power supply, at least one pair of electrodes, and at least one flow field observation module. The flow field observation module includes a high-speed camera, a light detecting component, and a light filter component. The power supply outputs a voltage to generate a plasma, and the pair of electrodes is disposed in the chamber. The flow field observation module is disposed outside the chamber and captures an image of a fluid particle excited by the plasma toward the chamber. The light filter component is disposed between the high-speed camera and the chamber. The light detecting component obtains a light information within the chamber and sends the light information to the light filter component.

公开(公告)号：US20180169606A1

公开(公告)日：2018-06-21

申请号：US15832736

申请日：2017-12-05

Applicant: Industrial Technology Research Institute

Inventor： Chun-An Lu ,  Yuan-Ling Tsai ,  Chiung-Hsiung Chen ,  Yi-Chen Wu ,  Shih-Chin Lin

IPC: B01J19/08 ,  B01J19/12

CPC classification number: B01J19/088 ,  B01J19/129 ,  B01J2219/0809 ,  B01J2219/083 ,  B01J2219/0833 ,  B01J2219/0869 ,  B01J2219/0875 ,  B01J2219/0898

Abstract: An apparatus for producing an inorganic powder and an apparatus for producing and classifying an inorganic powder are provided, wherein the apparatus for producing an inorganic powder includes an insulating tube, at least one pair of annular RF electrodes, and a gas supply apparatus. The pair of annular RF electrodes surrounds the outer circumference of the insulating tube to generate a first electric field region outside the insulating tube and generate a second electric field region having a plasma torch in the insulating tube after being turned on. The gas supply apparatus supplies a reaction mist and an inert gas into the insulating tube to thermally degrade and oxidize the reaction mist into an inorganic powder via the plasma torch.

公开(公告)号：US11320449B2

公开(公告)日：2022-05-03

申请号：US16701073

申请日：2019-12-02

Applicant: Industrial Technology Research Institute

Inventor： Chih-Yung Huang ,  Yao-Hsien Liu ,  Kuan-Chou Chen ,  Yi-Jiun Lin ,  Shih-Chin Lin ,  Ching-Chiun Wang

IPC: G01P13/00

Abstract: A visualization device for a flow field includes a chamber, a power supply, at least one pair of electrodes, and at least one flow field observation module. The flow field observation module includes a high-speed camera, a light detecting component, and a light filter component. The power supply outputs a voltage to generate a plasma, and the pair of electrodes is disposed in the chamber. The flow field observation module is disposed outside the chamber and captures an image of a fluid particle excited by the plasma toward the chamber. The light filter component is disposed between the high-speed camera and the chamber. The light detecting component obtains a light information within the chamber and sends the light information to the light filter component.

公开(公告)号：US20180119273A1

公开(公告)日：2018-05-03

申请号：US15384333

申请日：2016-12-20

Applicant: Industrial Technology Research Institute

Inventor： Chih-Yung Huang ,  Shih-Chin Lin ,  Ching-Chiun Wang

IPC: C23C14/50 ,  C23C14/24

CPC classification number: C23C14/505 ,  C23C14/228 ,  C23C14/24 ,  C23C14/243

Abstract: The disclosure is an evaporation apparatus and a method of evaporation using the same. The evaporation apparatus includes an evaporation chamber, an evaporation source, a carrying device, and a fluid disturbance device. The evaporation chamber has an evaporation space, the evaporation source is disposed at a lower part in the evaporation space, and the evaporation source is suitable for accommodating an evaporation source material. The carrying device is disposed to be rotatable about a reference axis as the center at an upper part in the evaporation space and is opposite to the evaporation source; the carrying device is suitable for carrying a substrate and positions the substrate between the evaporation source and the carrying device. The fluid disturbance device is suitable for injecting a disturbed fluid towards the carrying device in the evaporation space.

公开(公告)号：US09023693B1

公开(公告)日：2015-05-05

申请号：US14138147

申请日：2013-12-23

Applicant: Industrial Technology Research Institute

Inventor： Kung-Liang Lin ,  Chien-Chih Chen ,  Fu-Ching Tung ,  Chih-Yung Chen ,  Shih-Chin Lin ,  Kuan-Yu Lin ,  Chia-Hao Chang ,  Shieh-Sien Wu

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/31 ,  H01L21/469 ,  H01L51/52 ,  C23C16/455 ,  H01L21/02 ,  C23C16/458 ,  C23C16/505

CPC classification number: C23C16/4583 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45548 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/3244 ,  H01L21/02274 ,  H01L21/0228 ,  H01L51/5253

Abstract: A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.

Abstract translation: 提供一种多模式薄膜沉积设备，包括反应室，承载座，喷头，惰性气体供应源，第一气体流入系统和第二气体流入系统。 承载座设置在反应室中。 喷头具有设在气体混合室一侧的气体混合室和气孔。 气体混合室通过面向承载座的多个气孔连接到反应室。 第一气体流入系统连接到反应室，并在第一薄膜沉积工艺模式期间提供第一工艺气体。 惰性气体供给源连接到用于供给惰性气体的气体混合室。 第二气体流入系统连接到气体混合室，以在第二薄膜沉积工艺模式期间提供第二工艺气体。

公开(公告)号：US20230178643A1

公开(公告)日：2023-06-08

申请号：US17561633

申请日：2021-12-23

Applicant: Industrial Technology Research Institute

Inventor： Shih-Chin Lin ,  Ching-Chiun Wang ,  Jwu-Sheng Hu ,  Yi Chang ,  Yi-Jiun Lin

IPC: H01L29/778 ,  H01L29/15 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7785 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205

Abstract: A high electron mobility transistor (HEMT) device includes at least an AlN nucleation layer, a superlattice composite layer, a GaN electron transport layer, and an AlGaN barrier layer. The superlattice composite layer is disposed on the AlN nucleation layer, and the superlattice composite layer includes a plurality of AlN films and a plurality of GaN films stacked alternately to reduce device stress. The GaN electron transport layer is disposed on the superlattice composite layer, and the AlGaN barrier layer is disposed on the GaN electron transport layer.

公开(公告)号：US20150147890A1

公开(公告)日：2015-05-28

申请号：US14138147

申请日：2013-12-23

Applicant: Industrial Technology Research Institute

Inventor： Kung-Liang Lin ,  Chien-Chih Chen ,  Fu-Ching Tung ,  Chih-Yung Chen ,  Shih-Chin Lin ,  Kuan-Yu Lin ,  Chia-Hao Chang ,  Shieh-Sien Wu

IPC: H01L51/52 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/4583 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45548 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/3244 ,  H01L21/02274 ,  H01L21/0228 ,  H01L51/5253

Abstract: A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.

Abstract translation: 提供一种多模式薄膜沉积设备，包括反应室，承载座，喷头，惰性气体供应源，第一气体流入系统和第二气体流入系统。 承载座设置在反应室中。 喷头具有设在气体混合室一侧的气体混合室和气孔。 气体混合室通过面向承载座的多个气孔连接到反应室。 第一气体流入系统连接到反应室，并在第一薄膜沉积工艺模式期间提供第一工艺气体。 惰性气体供给源连接到用于供给惰性气体的气体混合室。 第二气体流入系统连接到气体混合室，以在第二薄膜沉积工艺模式期间提供第二工艺气体。