公开(公告)号：US09023693B1

公开(公告)日：2015-05-05

申请号：US14138147

申请日：2013-12-23

Applicant: Industrial Technology Research Institute

Inventor： Kung-Liang Lin ,  Chien-Chih Chen ,  Fu-Ching Tung ,  Chih-Yung Chen ,  Shih-Chin Lin ,  Kuan-Yu Lin ,  Chia-Hao Chang ,  Shieh-Sien Wu

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/31 ,  H01L21/469 ,  H01L51/52 ,  C23C16/455 ,  H01L21/02 ,  C23C16/458 ,  C23C16/505

CPC classification number: C23C16/4583 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45548 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/3244 ,  H01L21/02274 ,  H01L21/0228 ,  H01L51/5253

Abstract: A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.

Abstract translation: 提供一种多模式薄膜沉积设备，包括反应室，承载座，喷头，惰性气体供应源，第一气体流入系统和第二气体流入系统。 承载座设置在反应室中。 喷头具有设在气体混合室一侧的气体混合室和气孔。 气体混合室通过面向承载座的多个气孔连接到反应室。 第一气体流入系统连接到反应室，并在第一薄膜沉积工艺模式期间提供第一工艺气体。 惰性气体供给源连接到用于供给惰性气体的气体混合室。 第二气体流入系统连接到气体混合室，以在第二薄膜沉积工艺模式期间提供第二工艺气体。

公开(公告)号：US20150147890A1

公开(公告)日：2015-05-28

申请号：US14138147

申请日：2013-12-23

Applicant: Industrial Technology Research Institute

Inventor： Kung-Liang Lin ,  Chien-Chih Chen ,  Fu-Ching Tung ,  Chih-Yung Chen ,  Shih-Chin Lin ,  Kuan-Yu Lin ,  Chia-Hao Chang ,  Shieh-Sien Wu

IPC: H01L51/52 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/4583 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45548 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/3244 ,  H01L21/02274 ,  H01L21/0228 ,  H01L51/5253

Abstract: A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.

Abstract translation: 提供一种多模式薄膜沉积设备，包括反应室，承载座，喷头，惰性气体供应源，第一气体流入系统和第二气体流入系统。 承载座设置在反应室中。 喷头具有设在气体混合室一侧的气体混合室和气孔。 气体混合室通过面向承载座的多个气孔连接到反应室。 第一气体流入系统连接到反应室，并在第一薄膜沉积工艺模式期间提供第一工艺气体。 惰性气体供给源连接到用于供给惰性气体的气体混合室。 第二气体流入系统连接到气体混合室，以在第二薄膜沉积工艺模式期间提供第二工艺气体。