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    Reader sensor structure and its method of construction
    1.
    发明授权
    Reader sensor structure and its method of construction 有权
    读卡器传感器结构及其施工方法

    公开(公告)号：US09337414B2

    公开(公告)日：2016-05-10

    申请号：US13803362

    申请日：2013-03-14

    Applicant: Headway Technologies, Inc.

    Inventor： Min Li ,  Ruhang Ding ,  Cherng Chyi Han ,  Jianing Zhou ,  Minghui Yu

    IPC: G11B5/33 ,  H01L43/10 ,  H01L43/00 ,  H01L29/82 ,  G11B5/127 ,  H01L29/96 ,  H01L21/8246 ,  H01L43/08 ,  H01L43/12 ,  G11B5/39 ,  H01L43/02 ,  G11B5/31 ,  G01R33/09

    CPC classification number: H01L43/08 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/398 ,  G11B5/3983 ,  H01L43/02 ,  H01L43/12

    Abstract: A TMR (tunneling magnetoresistive) read sensor is formed in which a portion of the sensor stack containing the ferromagnetic free layer and the tunneling barrier layer is patterned to define a narrow trackwidth, but a synthetic antiferromagnetic pinning/pinned layer is left substantially unpatterned and extends in substantially as-deposited form beyond the lateral edges bounding the patterned portion. The narrow trackwidth of the patterned portion permits high resolution for densely recorded data. The larger pinning/pinned layer significantly improves magnetic stability and reduces thermal noise, while the method of formation eliminates possible ion beam etch (IBE) or reactive ion etch (RIE) damage to the edges of the pinning/pinned layer.

    Abstract translation: 形成TMR（隧道磁阻）读取传感器，其中包含铁磁自由层和隧道势垒层的传感器堆叠的一部分被图案化以限定窄的轨道宽度，但是合成的反铁磁性钉扎/钉扎层基本上未被图案化地延伸 在基本上沉积的形式中超过限定图案化部分的横向边缘。 图案部分的窄轨道宽度允许高密度记录数据的分辨率。 较大的钉扎/钉扎层显着提高了磁稳定性并降低了热噪声，而形成方法消除了对钉扎/钉扎层边缘的可能的离子束蚀刻（IBE）或反应离子蚀刻（RIE）损伤。

    Wrap-Around Shielded Writer with Highly Homogeneous Shield Material
    2.
    发明申请
    Wrap-Around Shielded Writer with Highly Homogeneous Shield Material 审中-公开
    带有高度均匀的屏蔽材料的包装屏蔽作者

    公开(公告)号：US20150029616A1

    公开(公告)日：2015-01-29

    申请号：US14484442

    申请日：2014-09-12

    Applicant: Headway Technologies, Inc.

    Inventor： Zhigang Bai ,  Yan Wu ,  Moris Dovek ,  Cherng Chyi Han

    IPC: G11B5/60 ,  G11B5/11 ,  G11B5/127

    CPC classification number: G11B5/6082 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/315 ,  G11B5/3163 ,  Y10T428/1171

    Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a main pole shielded laterally by a pair of side shields, shielded above by a trailing shield and shielded optionally below by a leading shield. The shields and the seed layers on which they are formed are formed of materials having substantially the same physical characteristics including the same material composition, the same hardness, the same response to processes such as ion beam etching (IBE), chemical mechanical polishing (CMP), mechanical lapping, such as the slider ABS lapping, the same coefficient of thermal expansion (CTE) as well as the same Bs. Optionally, the trailing shield may be formed on a high Bs seed layer to provide the write head with improved down-track performance.

    Abstract translation: 垂直磁记录（PMR）头被制造成具有由一对侧屏蔽横向屏蔽的主极，屏蔽在后面并由屏蔽罩屏蔽并且被前屏蔽罩屏蔽。 其形成的屏蔽层和种子层由具有相同物理特性的材料形成，包括相同的材料组成，相同的硬度，对离子束蚀刻（IBE），化学机械抛光（CMP） ），机械研磨，如滑块ABS研磨，相同的热膨胀系数（CTE）以及相同的Bs。 可选地，后屏蔽可以形成在高Bs种子层上，以向写头提供改进的下行轨迹性能。

    Reader Sensor Structure and its Method of Construction
    5.
    发明申请
    Reader Sensor Structure and its Method of Construction 有权
    读卡器传感器结构及其施工方法

    公开(公告)号：US20140264665A1

    公开(公告)日：2014-09-18

    申请号：US13803362

    申请日：2013-03-14

    Applicant: HEADWAY TECHNOLOGIES, INC.

    Inventor： Min Li ,  Ruhang Ding ,  Cherng Chyi Han ,  Jianing Zhou ,  Minghui Yu

    IPC: H01L43/08 ,  H01L43/12

    CPC classification number: H01L43/08 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/398 ,  G11B5/3983 ,  H01L43/02 ,  H01L43/12

    Abstract: A TMR (tunneling magnetoresistive) read sensor is formed in which a portion of the sensor stack containing the ferromagnetic free layer and the tunneling barrier layer is patterned to define a narrow trackwidth, but a synthetic antiferromagnetic pinning/pinned layer is left substantially unpatterned and extends in substantially as-deposited form beyond the lateral edges bounding the patterned portion. The narrow trackwidth of the patterned portion permits high resolution for densely recorded data. The larger pinning/pinned layer significantly improves magnetic stability and reduces thermal noise, while the method of formation eliminates possible ion beam etch (IBE) or reactive ion etch (RIE) damage to the edges of the pinning/pinned layer.

    Abstract translation: 形成TMR（隧道磁阻）读取传感器，其中包含铁磁自由层和隧道势垒层的传感器堆叠的一部分被图案化以限定窄的轨道宽度，但是合成的反铁磁性钉扎/钉扎层基本上未被图案化地延伸 在基本上沉积的形式中超过限定图案化部分的横向边缘。 图案部分的窄轨道宽度允许高密度记录数据的分辨率。 较大的钉扎/钉扎层显着提高了磁稳定性并降低了热噪声，而形成方法消除了对钉扎/钉扎层边缘的可能的离子束蚀刻（IBE）或反应离子蚀刻（RIE）损伤。

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