公开(公告)号：US20230206422A1

公开(公告)日：2023-06-29

申请号：US17925625

申请日：2021-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira SHIMASE ,  Xiangguang MAO ,  Akihito UCHIKADO

IPC: G06T7/00 ,  G06V10/764 ,  G01R31/308

CPC classification number: G06T7/001 ,  G01R31/308 ,  G06V10/764 ,  G06T2207/10024 ,  G06T2207/20081 ,  G06T2207/20212 ,  G06T2207/30148

Abstract: A semiconductor inspecting method according to an embodiment includes a step of scanning a semiconductor device with laser light to acquire characteristic information indicative of characteristics of an electrical signal of the semiconductor device in response to irradiation with the laser light for each of irradiation positions of the laser light and to generate a first pattern image of the semiconductor device based on characteristic information for each of irradiation positions, a step of generating a second pattern image of the semiconductor device based on a layout image of the semiconductor device and current path information indicative of a current path in the semiconductor device, and a step of acquiring matching information indicative of a relative relationship between the first pattern image and the layout image based on a result of positional alignment between the first pattern image and the second pattern image.

公开(公告)号：US20200152525A1

公开(公告)日：2020-05-14

申请号：US16742382

申请日：2020-01-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinsuke SUZUKI ,  Akira SHIMASE ,  Shinsuke SUZUKI

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  H01L21/268 ,  G01R31/28

Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device (D) including a substrate (SiE) and a metal layer (ME) formed on the substrate (SiE), and the inspection method includes specifying a fault point (fp) in the semiconductor device (D) by inspecting the semiconductor device (D), and irradiating the semiconductor device (D) with laser light having a wavelength that is transmitted through the substrate (SiE) from the substrate (SiE) side so that a marking is formed at least at a boundary between the substrate (SiE) and the metal layer (ME) on the basis of the fault point (fp).

公开(公告)号：US20220406644A1

公开(公告)日：2022-12-22

申请号：US17772596

申请日：2020-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira SHIMASE ,  Toshimichi ISHIZUKA ,  Masataka IKESU

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/67

Abstract: A failure analysis unit is a wafer conveyance unit configured to convey a wafer while holding the wafer in a semiconductor failure analysis apparatus, the wafer conveyance unit including: a placement table configured to fix a wafer at a predetermined observation position; and a wafer chuck configured to convey the wafer while holding the wafer to the observation position. The wafer chuck includes a plurality of holding members (protruding portions) provided so as to face a side surface of the wafer, and holds the wafer by sandwiching a peripheral portion of the wafer W with the plurality of holding members.

公开(公告)号：US20210373071A1

公开(公告)日：2021-12-02

申请号：US16766095

申请日：2018-09-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira SHIMASE ,  Kazuhiro HOTTA

IPC: G01R31/28 ,  G01R31/265 ,  G01R31/308 ,  G01R31/26 ,  G01R1/07

Abstract: An inspection apparatus includes a light sensor that detects light from a semiconductor device to which an electric signal has been input, an optical system that guides light from the semiconductor device to the light sensor, and a control device electrically connected to the light sensor. The control device includes a measurement unit that acquires waveform data obtained by optical measurement for each of a plurality of positions on a defective semiconductor device and waveform data obtained by the optical measurement for each of a plurality of positions on a non-defective semiconductor device, a calculation unit that calculates a degree of correspondence between the waveform data of the defective semiconductor device and the waveform data of the non-defective semiconductor device, and an analysis unit that analyzes a defective part of the defective semiconductor device on the basis of the degree of correspondence for each of the plurality of positions.

公开(公告)号：US20190371682A1

公开(公告)日：2019-12-05

申请号：US16478192

申请日：2017-10-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinsuke SUZUKI ,  Akira SHIMASE ,  Shinsuke SUZUKI

IPC: H01L21/66 ,  H01L21/268 ,  H01L23/544 ,  H01L21/67 ,  G01R31/28

Abstract: An inspection method according to an embodiment is an inspection method of performing laser marking on a semiconductor device including a substrate and a metal layer formed on the substrate, and the inspection method includes specifying a fault point in the semiconductor device by inspecting the semiconductor device, and irradiating the semiconductor device with laser light having a wavelength that is transmitted through the substrate from the substrate side so that a marking is formed at least at a boundary between the substrate and the metal layer on the basis of the fault point.

公开(公告)号：US20190271734A1

公开(公告)日：2019-09-05

申请号：US16346594

申请日：2017-09-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toru MATSUMOTO ,  Akira SHIMASE

IPC: G01R31/265

Abstract: A semiconductor device inspection apparatus is an apparatus for inspecting a semiconductor device which is an object to be inspected based on a result signal which is output in accordance with input of a test pattern signal to the semiconductor device, the apparatus including: an ultrasonic transducer, disposed to face the semiconductor device, which generates ultrasonic waves; a stage for moving a relative position of the semiconductor device and the ultrasonic transducer; a stimulation condition control unit for controlling a condition of stimulation by the ultrasonic waves applied to the semiconductor device; and an analysis unit for generating a measurement image based on the result signal which is output from the semiconductor device.

公开(公告)号：US20240402092A1

公开(公告)日：2024-12-05

申请号：US18698876

申请日：2022-06-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira SHIMASE ,  Tomochika TAKESHIMA ,  Akari ITO

IPC: G01N21/88 ,  G01N21/95 ,  G01N21/956 ,  G02B7/36

Abstract: An autofocus support method according to an embodiment supports autofocus for a semiconductor device having a substrate and a device pattern formed on one main surface side of the substrate. The method includes: a step of acquiring a first image focused on the substrate; a step of acquiring a spatial frequency image from the first image by Fourier transform and generating mask data for masking linear patterns in the same direction on the substrate based on the spatial frequency image; a step of performing filtering on a plurality of second images, which are captured by using an imaging device while changing the focal position of the imaging device on the other main surface side of the substrate, by using the mask data; and a step of focusing the imaging device on the device pattern based on the second image after filtering.

公开(公告)号：US20230184827A1

公开(公告)日：2023-06-15

申请号：US17926376

申请日：2021-04-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Norimichi CHINONE ,  Tomonori NAKAMURA ,  Akira SHIMASE ,  Shigeru EURA

IPC: G01R31/311 ,  G01R31/28

CPC classification number: G01R31/311 ,  G01R31/2837

Abstract: A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that calculates a frequency at which the characteristic signal reflecting the electrical characteristics of a first layer and the characteristic signal reflecting the electrical characteristics of a second layer have a predetermined phase difference, corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at the scanning position reflecting the electrical characteristics of the first layer as a reference, and outputs an in-phase component and a quadrature component at the arbitrary scanning position at the calculated frequency.

公开(公告)号：US20230184825A1

公开(公告)日：2023-06-15

申请号：US17926390

申请日：2021-04-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Norimichi CHINONE ,  Tomonori NAKAMURA ,  Akira SHIMASE

IPC: G01R31/28

CPC classification number: G01R31/2879 ,  G01R31/287

Abstract: A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics of the semiconductor device; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at a scanning position reflecting the electrical characteristics of a first layer in the semiconductor device as a reference, specifies a phase component of the characteristic signal at a scanning position reflecting the electrical characteristics of a second layer, normalizes the phase component of the characteristic signal at the arbitrary scanning position by using the phase component, and outputs a result based on the normalized phase component.

公开(公告)号：US20200333134A1

公开(公告)日：2020-10-22

申请号：US16766069

申请日：2018-09-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira SHIMASE ,  Kazuhiro HOTTA

IPC: G01B11/24 ,  G01N21/956

Abstract: A semiconductor device inspection apparatus includes: a light sensor that detects light from a semiconductor device as a DUT to which an electric signal has been input; an optical system that guides light from the semiconductor device to the light sensor; and a control device electrically connected to the light sensor. The control device includes: a data reading unit that reads mask data indicating a mask layout of the semiconductor device; a search unit that searches for a position of a transistor in the semiconductor device on the basis of polygon data of a gate layer of the semiconductor device included in the mask data; a setting unit that sets the searched position of the transistor as an optical measurement target position; and a measurement unit that performs optical measurement for the set optical measurement target position to acquire a measurement result.