公开(公告)号：US20230184827A1

公开(公告)日：2023-06-15

申请号：US17926376

申请日：2021-04-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Norimichi CHINONE ,  Tomonori NAKAMURA ,  Akira SHIMASE ,  Shigeru EURA

IPC: G01R31/311 ,  G01R31/28

CPC classification number: G01R31/311 ,  G01R31/2837

Abstract: A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that calculates a frequency at which the characteristic signal reflecting the electrical characteristics of a first layer and the characteristic signal reflecting the electrical characteristics of a second layer have a predetermined phase difference, corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at the scanning position reflecting the electrical characteristics of the first layer as a reference, and outputs an in-phase component and a quadrature component at the arbitrary scanning position at the calculated frequency.

公开(公告)号：US20230184825A1

公开(公告)日：2023-06-15

申请号：US17926390

申请日：2021-04-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Norimichi CHINONE ,  Tomonori NAKAMURA ,  Akira SHIMASE

IPC: G01R31/28

CPC classification number: G01R31/2879 ,  G01R31/287

Abstract: A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics of the semiconductor device; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at a scanning position reflecting the electrical characteristics of a first layer in the semiconductor device as a reference, specifies a phase component of the characteristic signal at a scanning position reflecting the electrical characteristics of a second layer, normalizes the phase component of the characteristic signal at the arbitrary scanning position by using the phase component, and outputs a result based on the normalized phase component.