Abstract:
An electrical interconnect assembly includes an insulating substrate, upper conductive pads coupled to a top surface of the insulating substrate, and lower conductive pads coupled to a bottom surface of the insulating substrate. The upper conductive pads and the lower conductive pads comprise an electrically conductive material. A metallization layer is deposited on the top surface of the insulating substrate and the upper conductive pads. The metallization layer extends through vias formed through a thickness of the insulating substrate to contact a top surface of the lower conductive pads.
Abstract:
A system and method for chip package fabrication is disclosed. The chip package includes a base re-distribution layer having an opening formed therein, an adhesive layer having a window formed therein free of adhesive material, and a die affixed to the base re-distribution layer by way of the adhesive layer, the die being aligned with the window such that only a perimeter of the die contacts the adhesive layer. A shield element is positioned between the base re-distribution layer and adhesive layer that is generally aligned with the opening formed in the base re-distribution layer and the window of the adhesive layer such that only a perimeter of the shield element is attached to the adhesive layer. The shield element is separated from the die by an air gap and is configured to be selectively removable from the adhesive layer so as to expose the front surface of the die.
Abstract:
An electrical interconnect assembly for use in an integrated circuit package includes a mounting substrate having a thickness defined between a first surface and a second surface thereof and at least one electrically conductive pad formed on the first surface of the mounting substrate. A metallization layer coats a surface of the at least one electrically conductive pad and is electrically coupled thereto. The metallization layer also coats portion of the first surface of the mounting substrate and extends through at least one via formed through the thickness of the mounting substrate.
Abstract:
An interconnect assembly for an embedded chip package includes a dielectric layer, first metal layer comprising upper contact pads, second metal layer comprising lower contact pads, and metalized connections formed through the dielectric layer and in contact with the upper and lower contact pads to form electrical connections therebetween. A first surface of the upper contact pads is affixed to a top surface of the dielectric layer and a first surface of the lower contact pads is affixed to a bottom surface of the dielectric layer. An input/output (I/O) of a first side of the interconnect assembly is formed on a surface of the lower contact pads that is opposite the first surface of the lower contact pads, and an I/O of a second side of the interconnect assembly is formed on a surface of the upper contact pads that is opposite the first surface of the upper contact pads.
Abstract translation:用于嵌入式芯片封装的互连组件包括介电层,包括上接触焊盘的第一金属层,包括下接触焊盘的第二金属层和通过介电层形成并与上接触焊盘和下接触焊盘接触的金属化连接,以形成电 它们之间的连接。 上接触焊盘的第一表面固定到电介质层的顶表面,并且下接触焊盘的第一表面固定到电介质层的底表面。 互连组件的第一侧的输入/输出(I / O)形成在下接触焊盘的与下接触焊盘的第一表面相对的表面上,并且第二侧的I / O 互连组件形成在与上接触焊盘的第一表面相对的上接触焊盘的表面上。
Abstract:
A system and method for chip package fabrication is disclosed. The chip package includes a base re-distribution layer having an opening formed therein, an adhesive layer having a window formed therein free of adhesive material, and a die affixed to the base re-distribution layer by way of the adhesive layer, the die being aligned with the window such that only a perimeter of the die contacts the adhesive layer. A shield element is positioned between the base re-distribution layer and adhesive layer that is generally aligned with the opening formed in the base re-distribution layer and the window of the adhesive layer such that only a perimeter of the shield element is attached to the adhesive layer. The shield element is separated from the die by an air gap and is configured to be selectively removable from the adhesive layer so as to expose the front surface of the die.
Abstract:
An electrical interconnect assembly for use in an integrated circuit package includes a mounting substrate having a thickness defined between a first surface and a second surface thereof and at least one electrically conductive pad formed on the first surface of the mounting substrate. A metallization layer coats a surface of the at least one electrically conductive pad and is electrically coupled thereto. The metallization layer also coats portion of the first surface of the mounting substrate and extends through at least one via formed through the thickness of the mounting substrate. A method of manufacturing an electrical interconnect assembly includes forming at least one top side contact pad on a top surface of a mounting substrate and depositing a metallization layer on the top side contact pad(s), on an exposed portion of the top surface, and into via(s) formed through a thickness of the mounting substrate.
Abstract:
A chip package includes a first substrate having at least one circuit layer formed on a first surface thereof, a first die mounted on a second surface of the first substrate opposite from the first surface, and an interconnection assembly comprising upper and lower conductive layers provided on an insulating substrate, with the upper conductive layer of the interconnection assembly affixed to the second surface of the first substrate and electrically connected to the at least one circuit layer of the first substrate. A second substrate is positioned on a side of the first die opposite from the first substrate so as to position the die between the first and second substrates, the second substrate having at least one circuit layer formed on an outward facing first surface thereof that is electrically connected to at least one of the lower conductive layers of the interconnection assembly and the first die.
Abstract:
An interconnect assembly for an embedded chip package includes a dielectric layer, first metal layer comprising upper contact pads, second metal layer comprising lower contact pads, and metalized connections formed through the dielectric layer and in contact with the upper and lower contact pads to form electrical connections therebetween. A first surface of the upper contact pads is affixed to a top surface of the dielectric layer and a first surface of the lower contact pads is affixed to a bottom surface of the dielectric layer. An input/output (I/O) of a first side of the interconnect assembly is formed on a surface of the lower contact pads that is opposite the first surface of the lower contact pads, and an I/O of a second side of the interconnect assembly is formed on a surface of the upper contact pads that is opposite the first surface of the upper contact pads.
Abstract translation:用于嵌入式芯片封装的互连组件包括介电层,包括上接触焊盘的第一金属层,包括下接触焊盘的第二金属层和通过介电层形成并与上接触焊盘和下接触焊盘接触的金属化连接,以形成电 它们之间的连接。 上接触焊盘的第一表面固定到电介质层的顶表面,并且下接触焊盘的第一表面固定到电介质层的底表面。 互连组件的第一侧的输入/输出(I / O)形成在下接触焊盘的与下接触焊盘的第一表面相对的表面上,并且第二侧的I / O 互连组件形成在与上接触焊盘的第一表面相对的上接触焊盘的表面上。
Abstract:
A chip package includes a first substrate having at least one circuit layer formed on a first surface thereof, a first die mounted on a second surface of the first substrate opposite from the first surface, and an interconnection assembly comprising upper and lower conductive layers provided on an insulating substrate, with the upper conductive layer of the interconnection assembly affixed to the second surface of the first substrate and electrically connected to the at least one circuit layer of the first substrate. A second substrate is positioned on a side of the first die opposite from the first substrate so as to position the die between the first and second substrates, the second substrate having at least one circuit layer formed on an outward facing first surface thereof that is electrically connected to at least one of the lower conductive layers of the interconnection assembly and the first die.
Abstract:
An interconnect assembly for an embedded chip package includes a dielectric layer, first metal layer comprising upper contact pads, second metal layer comprising lower contact pads, and metalized connections formed through the dielectric layer and in contact with the upper and lower contact pads to form electrical connections therebetween. A first surface of the upper contact pads is affixed to a top surface of the dielectric layer and a first surface of the lower contact pads is affixed to a bottom surface of the dielectric layer. An input/output (I/O) of a first side of the interconnect assembly is formed on a surface of the lower contact pads that is opposite the first surface of the lower contact pads, and an I/O of a second side of the interconnect assembly is formed on a surface of the upper contact pads that is opposite the first surface of the upper contact pads.
Abstract translation:用于嵌入式芯片封装的互连组件包括介电层,包括上接触焊盘的第一金属层,包括下接触焊盘的第二金属层和通过介电层形成并与上接触焊盘和下接触焊盘接触的金属化连接,以形成电 它们之间的连接。 上接触焊盘的第一表面固定到电介质层的顶表面,并且下接触焊盘的第一表面固定到电介质层的底表面。 互连组件的第一侧的输入/输出(I / O)形成在下接触焊盘的与下接触焊盘的第一表面相对的表面上,并且第二侧的I / O 互连组件形成在与上接触焊盘的第一表面相对的上接触焊盘的表面上。