Field effect transistor
    9.
    发明授权

    公开(公告)号:US11289600B2

    公开(公告)日:2022-03-29

    申请号:US16874033

    申请日:2020-05-14

    Inventor: Byounggun Choi

    Abstract: Provided is a field effect transistor including a semiconductor layer, a gate electrode provided on a channel region in the semiconductor layer, and a channel adjusting member provided adjacent to the channel region on one surface of the semiconductor layer and overlapping the gate electrode on a plane. Here, the channel adjusting member provides a depletion layer in the channel region.

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