公开(公告)号：US12067943B2

公开(公告)日：2024-08-20

申请号：US18471324

申请日：2023-09-21

Applicant: Chengdu BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Yao Huang ,  Rui Wang ,  Benlian Wang ,  Haigang Qing ,  Zhi Wang

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0842 ,  G09G2310/061 ,  G09G2320/0233 ,  G09G2320/0247

Abstract: A pixel circuit, a driving method for same, and a display apparatus are provided. The pixel circuit includes a driving sub-circuit, a writing sub-circuit, a compensation sub-circuit, a first reset sub-circuit, an emitting element. The driving sub-circuit provides a driving current for a third node under control of signals of first and second nodes. The writing sub-circuit writes a signal of the data signal terminal into the second node under control of a signal of a second scanning signal terminal. The first reset sub-circuit writes an initial voltage signal of a first initial signal terminal into the third node under control of a first scanning signal terminal and a first emitting control signal terminal. The compensation sub-circuit writes the initial voltage signal of the third node into the first node under control of a third scanning signal terminal, compensates the first node under control of the third scanning signal terminal.

公开(公告)号：US11469336B2

公开(公告)日：2022-10-11

申请号：US16958120

申请日：2020-01-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianhua Du ,  Chao Li ,  Zhaohui Qiang ,  Yupeng Gao ,  Feng Guan ,  Rui Huang ,  Zhi Wang ,  Yang Lv ,  Chao Luo

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20

Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

公开(公告)号：US11063069B2

公开(公告)日：2021-07-13

申请号：US16577578

申请日：2019-09-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Guan ,  Chen Xu ,  Zhi Wang ,  Liwei Liu ,  Lei Chen ,  Xueyong Wang ,  Yan Chen

IPC: H01L27/12 ,  H01L21/02

Abstract: A method for manufacturing a display substrate is provided to include: forming an amorphous silicon layer on a base substrate; irradiating at least part of the display region through a mask plate with a laser, to convert a portion of the amorphous silicon layer in the irradiated part of the display region corresponding to channel regions of active layers of transistors into polycrystalline silicon by a laser annealing process; irradiating at least part of the peripheral region with a laser, to convert the amorphous silicon layer in the irradiated part of the peripheral region into polycrystalline silicon; and forming the active layers of the transistors from the amorphous silicon layer which is converted to polycrystalline silicon by a patterning process.

公开(公告)号：US10998189B2

公开(公告)日：2021-05-04

申请号：US16569311

申请日：2019-09-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Guan ,  Zhi Wang ,  Chen Xu

IPC: H01L21/02 ,  B23K26/06 ,  H01L21/306 ,  H01L23/544 ,  H01L27/12 ,  B23K26/354

Abstract: A laser annealing process of a drive backplane includes: providing a mask, which has a light transmission area; and sequentially moving the mask to cover different areas of an amorphous silicon layer of the drive backplane, and annealing the amorphous silicon layer exposed in the light transmission area to form a poly-silicon pattern.

公开(公告)号：US10804405B2

公开(公告)日：2020-10-13

申请号：US16335081

申请日：2018-08-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhi Wang

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/32

Abstract: The present disclosure provides a method for making a thin film transistor (TFT), a TFT, a back plate and a display device. The TFT includes: a gate electrode, a source, a drain, a dielectric layer and an active layer on the dielectric layer. The active layer includes at least one a-Si area and at least one p-Si area. This can reduce leakage current and reduce the technical complexity of the large-channel TFT.

公开(公告)号：US20200233514A1

公开(公告)日：2020-07-23

申请号：US16604672

申请日：2019-05-22

Applicant: Chongqing BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Xuebo Liang ,  Xiuzhu Tang ,  Shuai Chen ,  Shuang Hu ,  Xing Dong ,  Lijun Xiong ,  Zhenguo Tian ,  Taoliang Tang ,  Zhi Wang

IPC: G06F3/041

Abstract: A touch display module, a controlling method, a panel and a display device are provided in embodiments of the disclosure, all belong to the technical field of display technology, the touch display module including: a touch circuit, an auxiliary circuit, a base substrate, a plurality of electrode blocks and a plurality of electrode lines; the touch circuit is configured to provide the plurality of electrode lines with respective display signals at a display stage, and to provide the plurality of electrode lines with respective touch signals at a touch stage; and the auxiliary circuit is configured to provide the plurality of electrode lines with respective display signals at the display stage, and to stop providing the plurality of electrode lines with the respective display signals at the touch stage.

公开(公告)号：US10135217B2

公开(公告)日：2018-11-20

申请号：US15796514

申请日：2017-10-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangjun Tian ,  Yan Chen ,  Xueyong Wang ,  Zhi Wang

IPC: H01S3/00 ,  H01S3/08 ,  H01L21/268 ,  H01L21/67 ,  H01S3/036 ,  H01L21/02 ,  H01L21/324 ,  H01S3/034 ,  H01S3/225 ,  H01S3/23

Abstract: The embodiments of the present disclosure provide an optical device and an excimer laser annealing equipment. The optical device includes: a light source; a transparent window spaced apart from the light source by a distance; and an optical system disposed between the light source and the transparent window. The transparent window is configured such that emergent light of the light source is vertically incident onto the transparent window after passing through the optical system.

公开(公告)号：US20180277374A1

公开(公告)日：2018-09-27

申请号：US15796514

申请日：2017-10-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangjun Tian ,  Yan Chen ,  Xueyong Wang ,  Zhi Wang

IPC: H01L21/268 ,  H01L21/67 ,  H01L21/324 ,  H01L21/02 ,  H01S3/036

CPC classification number: H01S3/08059 ,  H01L21/02422 ,  H01L21/02595 ,  H01L21/2686 ,  H01L21/324 ,  H01L21/67098 ,  H01S3/034 ,  H01S3/036 ,  H01S3/225 ,  H01S3/23

Abstract: The embodiments of the present disclosure provide an optical device and an excimer laser annealing equipment. The optical device includes: a light source; a transparent window spaced apart from the light source by a distance; and an optical system disposed between the light source and the transparent window. The transparent window is configured such that emergent light of the light source is vertically incident onto the transparent window after passing through the optical system.

公开(公告)号：US12272754B2

公开(公告)日：2025-04-08

申请号：US17761549

申请日：2021-05-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Zhi Wang ,  Feng Guan

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

Abstract: A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

公开(公告)号：US12183275B2

公开(公告)日：2024-12-31

申请号：US17640546

申请日：2021-04-28

Applicant: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Linhong Han ,  Qiwei Wang ,  Benlian Wang ,  Yao Huang ,  Weiyun Huang ,  Zhi Wang ,  Binyan Wang

IPC: G09G3/3233 ,  H10K59/131

Abstract: A display substrate and a display panel are provided. The display substrate includes: sub-pixels, a data line, a scan signal line, a first light-emitting control signal line, and a second light-emitting control signal line, each sub-pixel includes a pixel circuit that includes a first light-emitting control sub-circuit, a second light-emitting control sub-circuit, and a data writing sub-circuit, the first light-emitting control sub-circuit is connected to the first light-emitting control signal line; the second light-emitting control sub-circuit is connected to the second light-emitting control signal line; the data writing sub-circuit is connected to the scan signal line; the first light-emitting control signal line, the scan signal line, and the second light-emitting control signal line extend along a first direction and are arranged along a second direction, and the scan signal line is between the first light-emitting control signal line and the second light-emitting control signal line in the second direction.