公开(公告)号：US20240112931A1

公开(公告)日：2024-04-04

申请号：US17959189

申请日：2022-10-03

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Kartik Bhupendra SHAH ,  Ala MORADIAN

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67161 ,  H01L21/02282 ,  H01L21/67253

Abstract: The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations. In one implementation, a cassette configured for disposition in a substrate processing chamber includes a first wall, a second wall spaced from the first wall, and one or more sidewalls extending between and coupled to the first wall and the second wall. The cassette includes one or more inlet openings formed in the one or more sidewalls, and one or more outlet openings formed in the one or more sidewalls opposite the one or more inlet openings. The cassette includes a plurality of levels that include a plurality of substrate supports mounted to the one or more sidewalls and spaced from each other along the one or more sidewalls.

公开(公告)号：US20230133402A1

公开(公告)日：2023-05-04

申请号：US17968561

申请日：2022-10-18

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Kartik Bhupendra SHAH ,  Chaitanya Anjaneyalu PRASAD ,  Vishwas Kumar PANDEY ,  AnilKumar BODEPUDI ,  Erika HANSEN

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458

Abstract: The present disclosure relates to a gas injection module for a process chamber. The process chamber includes a chamber body, a rotatable substrate support disposed inside a process volume of the chamber body, the substrate support configured to have a rotational spin rate; an inlet port formed in the chamber body, and an injection module coupled to the inlet port. The injection module includes a body, one or more gas inlets coupled to the body, and a plurality of nozzles formed in a supply face of the body, the supply face configured to face inside the chamber body, and gas exiting from the injection module is configured to have a flow rate; the process chamber also includes a controller configured to operate the process chamber such that the ratio of the flow rate to the rotational spin rate is between about 1/3 and 3.

公开(公告)号：US20240337020A1

公开(公告)日：2024-10-10

申请号：US18747687

申请日：2024-06-19

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Errol Antonio C. SANCHEZ ,  Sohrab ZOKAEI ,  Michael R. RICE ,  Peter REIMER

IPC: C23C16/455 ,  B01J4/00 ,  C23C16/44

CPC classification number: C23C16/4558 ,  B01J4/005 ,  B01J4/008 ,  C23C16/4412 ,  C23C16/45587

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

公开(公告)号：US20230167581A1

公开(公告)日：2023-06-01

申请号：US17919896

申请日：2021-07-16

Applicant: Applied Materials, Inc.

Inventor： Kartik Bhupendra SHAH ,  Schubert S. CHU ,  Adel George TANNOUS ,  Ala MORADIAN ,  Nyi Oo MYO ,  Surajit KUMAR ,  Zuoming ZHU ,  Brian Hayes BURROWS ,  Vishwas Kumar PANDEY ,  Shu-Kwan LAU ,  Srinivasa RANGAPPA

IPC: C30B25/10 ,  H01L21/687 ,  H01L21/67 ,  C30B25/18 ,  C30B25/08 ,  C23C16/02

CPC classification number: C30B25/105 ,  H01L21/68771 ,  H01L21/68764 ,  H01L21/67248 ,  H01L21/68757 ,  C30B25/186 ,  C30B25/08 ,  C23C16/0209 ,  C23C16/0227

Abstract: A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.

公开(公告)号：US20220364261A1

公开(公告)日：2022-11-17

申请号：US17317363

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Kartik Bhupendra SHAH ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Matthias BAUER ,  Peter REIMER ,  Michael R. RICE

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/10 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：US20230128611A1

公开(公告)日：2023-04-27

申请号：US17508493

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Colin John DICKINSON ,  Dinkesh HUDERI SOMANNA ,  Ala MORADIAN ,  Kartik Bhupendra SHAH

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/34

Abstract: An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

公开(公告)号：US20220367216A1

公开(公告)日：2022-11-17

申请号：US17317684

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Kostiantyn ACHKASOV ,  Errol Antonio C. SANCHEZ ,  Michael R. RICE ,  Marc SHULL ,  Ji-Dih HU

IPC: H01L21/67 ,  C23C16/44

Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

公开(公告)号：US20220364231A1

公开(公告)日：2022-11-17

申请号：US17317342

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Ala MORADIAN ,  Manjunath SUBBANNA ,  Kartik Bhupendra SHAH ,  Errol Antonio C. SANCHEZ ,  Sohrab ZOKAEI ,  Michael R. RICE ,  Peter REIMER

IPC: C23C16/455 ,  B01J4/00 ,  C23C16/44

Abstract: The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.

公开(公告)号：US20230230859A1

公开(公告)日：2023-07-20

申请号：US17919911

申请日：2021-07-12

Applicant: Applied Materials, Inc.

Inventor： Adel George TANNOUS ,  Schubert S. CHU ,  Shu-Kwan LAU ,  Kartik Bhupendra SHAH ,  Zuoming ZHU ,  Ala MORADIAN ,  Surajit KUMAR ,  Srinivasa RANGAPPA ,  Chia Cheng CHIN ,  Vishwas Kumar PANDEY

IPC: H01L21/67 ,  H01L21/687 ,  H05B3/00

CPC classification number: H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68771 ,  H05B3/0047

Abstract: A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.

公开(公告)号：US20220364229A1

公开(公告)日：2022-11-17

申请号：US17317565

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Manjunath SUBBANNA ,  Ala MORADIAN ,  Kartik Bhupendra SHAH ,  Errol Antonio C SANCHEZ ,  Michael R. RICE ,  Peter REIMER ,  Marc SHULL

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C30B25/12 ,  C30B25/16 ,  C30B25/10 ,  C23C16/52

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.