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    Method of magnetic field assisted self-assembly
    1.
    发明授权
    Method of magnetic field assisted self-assembly 失效
    磁场辅助自组装方法

    公开(公告)号：US07217592B2

    公开(公告)日：2007-05-15

    申请号：US11077961

    申请日：2005-03-11

    Applicant: Ravindra M. Nuggehalli ,  Anthony T. Fiory ,  Shet Sudhakar

    Inventor： Ravindra M. Nuggehalli ,  Anthony T. Fiory ,  Shet Sudhakar

    IPC: H01L21/44

    CPC classification number: B81C1/00007 ,  H01L24/95 ,  H01L2224/95085 ,  H01L2224/95092 ,  H01L2224/95122 ,  H01L2224/95136 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00

    Abstract: A method for assembling and integrating microstructures (pills) onto a substrate. A plurality of patterned recesses are formed on the substrates, the recesses having transverse cross-sections and openings of specific shapes. A hard magnetic layer is deposited at the bottom of each said recess. A guide is positioned over the substrate, the guide having patterned hole shapes matching the shapes of the openings to the patterned recesses with which the holes mate. A collection of the pills is placed atop the guide. The said collection includes members with cross-sections matching the shapes of the openings to the recesses, and each pill is coated at one end with a soft magnetic layer. A moving magnetic field is applied to the collection of pills to agitate the pills, and effect a magnetic attraction between the layers at the ends of the pills and the soft magnetic layer at the bottom of the recesses. The pills fall through the similarly shaped guide holes and into the recesses and are firmly attracted to the bottoms of the recesses by the magnetic attractive forces.

    Abstract translation: 将微结构（丸）组装和整合到基底上的方法。 在基板上形成多个图案化的凹部，凹部具有横截面和具体形状的开口。 在每个所述凹部的底部沉积硬磁性层。 引导件定位在基板上方，引导件具有与开口形状匹配的图形孔形状与孔匹配的图案化凹部。 药片的收集放在指南顶部。 所述集合包括具有与开口的形状匹配到凹部的横截面的构件，并且每个药丸在一端被涂覆有软磁性层。 移动的磁场被施加到药丸的收集以搅拌药丸，并且在药丸末端的层和凹部底部的软磁性层之间的层之间产生磁吸引力。 药丸通过类似形状的引导孔落入凹槽中，并通过磁力吸引力牢固地吸引到凹部的底部。

    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies
    3.
    发明授权
    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies 失效
    半导体加工技术，包括辐射加热体的高温测量

    公开(公告)号：US5305416A

    公开(公告)日：1994-04-19

    申请号：US042028

    申请日：1993-04-02

    Applicant: Anthony T. Fiory

    Inventor： Anthony T. Fiory

    IPC: G01J5/10 ,  G01J5/00 ,  H05B3/62

    CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0818 ,  G01J5/0878 ,  G01J2005/0048 ,  G01J2005/0074

    Abstract: In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitude according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface. The second probe effectively samples this radiation from an area of the diffusely reflecting surface that subtends a solid angle .OMEGA..sub.2 at the wafer surface. The first probe effectively samples radiation from an area of the wafer that subtends a solid angle .OMEGA..sub.1 at the first probe. The radiation sampling is carried out such that .OMEGA..sub.2 is at least about .OMEGA..sub.1.

    Abstract translation: 在加热过程中，例如处理室内的半导体晶片，晶片暴露于由交流电流激励的灯的电磁辐射通量。 测量晶片的表面温度，并且响应地控制辐射通量。 温度测量程序包括收集在第一光管探针中离开晶片传播的辐射，收集在第二光管探针中向晶片传播的辐射并检测在各个探针中收集的辐射。 该过程还包括在从每个探测器接收的信号中确定由激励电流的时间变化导致的时变分量的幅度，并且根据可从其推断温度的数学表达式至少组合这些幅度 。 在从漫反射表面反射之后收集由第二探针收集的至少一些辐射。 第二个探针有效地从弥漫反射表面的面对晶片表面的立体角（Ω）2的区域采样这种辐射。 第一探针有效地从在第一探针处对准立体角（Ω）1的晶片区域的辐射。 进行辐射采样使得（Ω）2为至少约（Ω）1。

    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
    4.
    发明授权
    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique 失效
    半导体加工技术，包括辐射加热体的高温测量和用于实践该技术的设备

    公开(公告)号：US5624590A

    公开(公告)日：1997-04-29

    申请号：US418337

    申请日：1995-04-07

    Applicant: Anthony T. Fiory

    Inventor： Anthony T. Fiory

    IPC: G01J5/00

    CPC classification number: G01J5/0003

    Abstract: In an apparatus and process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first probe, collecting radiation propagating away from the wafer and radiation from the lamps in a second probe, and detecting radiation collected in the respective probes. This procedure further involves deconvolving the multiphase ac component of the signal received from each probe, determining the linear functional relationship of the first probe signal as a function of the second probe signal resulting from time-variations of the energizing current, and using this linear functional relationship along with the signal data according to a mathematical expression to infer the temperature. The probes are oriented such that the first probe samples radiation from a portion of the wafer that subtends an angle .OMEGA..sub.1 from the first probe and the second probe samples radiation from the same portion of the wafer and at least one lamp which subtends a solid angle .OMEGA..sub.2.

    Abstract translation: 在用于加热的设备和方法中，例如处理室内的半导体晶片，晶片暴露于由交流电流激励的灯的电磁辐射通量。 测量晶片的表面温度，并且响应地控制辐射通量。 温度测量程序包括收集在第一探针中远离晶片传播的辐射，收集在晶片上传播的辐射和在第二探针中来自灯的辐射，以及检测在各个探针中收集的辐射。 该过程还包括对从每个探头接收的信号的多相交流分量进行解卷积，确定第一探针信号的线性函数关系作为由激励电流的时间变化产生的第二探针信号的函数，并且使用该线性函数 关系以及根据数学表达式的信号数据来推断温度。 探针定向成使得第一探针从晶片的一部分对准来自第一探针的角度OMEGA 1的辐射，并且第二探针对来自晶片的相同部分的辐射进行采样，并且至少一个对准立体角的灯 欧米茄2

    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies
    5.
    发明授权
    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies 失效
    半导体加工技术，包括辐射加热体的高温测量

    公开(公告)号：US5442727A

    公开(公告)日：1995-08-15

    申请号：US227844

    申请日：1994-04-14

    Applicant: Anthony T. Fiory

    Inventor： Anthony T. Fiory

    IPC: G01J5/10 ,  G01J5/00 ,  H05B3/62

    CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0818 ,  G01J5/0878 ,  G01J2005/0048 ,  G01J2005/0074

    Abstract: In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe, and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitudes according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface. The second probe effectively samples this radiation from an area of the diffusely reflecting surface that subtends a solid angle .OMEGA..sub.2 at the wafer surface. The first probe effectively samples radiation from an area of the wafer that subtends a solid angle .OMEGA..sub.1 at the first probe. The radiation sampling is carried out such that .OMEGA..sub.2 is at least about .OMEGA..sub.1.

    Abstract translation: 在加热过程中，例如处理室内的半导体晶片，晶片暴露于由交流电流激励的灯的电磁辐射通量。 测量晶片的表面温度，并且响应地控制辐射通量。 温度测量程序包括收集在第一光管探针中离开晶片传播的辐射，收集在第二光管探针中向晶片传播的辐射，以及检测在各个探针中收集的辐射。 该过程进一步包括在从每个探测器接收到的信号中确定由激励电流的时间变化导致的时变分量的幅度，并且根据可从其推断温度的数学表达式至少组合这些幅度 。 在从漫反射表面反射之后收集由第二探针收集的至少一些辐射。 第二探针有效地从漫反射表面的与晶片表面的立体角OMEGA 2相对的区域采样该辐射。 第一探针有效地从在第一探针处对准固体角度的OMEGA 1的晶片区域的辐射。 进行辐射采样使得OMEGA 2至少约为OMEGA 1。

    Method of producing a superconductive oxide layer on a substrate
    6.
    发明授权
    Method of producing a superconductive oxide layer on a substrate 失效
    在基材上生产超导氧化层的方法

    公开(公告)号：US5132280A

    公开(公告)日：1992-07-21

    申请号：US101043

    申请日：1987-09-25

    Applicant: Anthony T. Fiory ,  Michael Gurvitch

    Inventor： Anthony T. Fiory ,  Michael Gurvitch

    IPC: C01B13/14 ,  C01G1/00 ,  C01G3/00 ,  C04B41/89 ,  C23C14/08 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

    CPC classification number: H01L39/2451 ,  H01L39/2464 ,  Y10S505/73 ,  Y10S505/731

    Abstract: A method of forming a superconductive metal oxide film on a substrate is disclosed. The method comprises depositing a metal layer on the substrate and heat treating the metal layer in an oxygen-containing atmosphere such that the oxide film is formed therefrom. The metal layer is deposited such that it is substantially free of reactive constituents, e.g., oxygen and/or fluorine, and such that it contains all the metal constitutents that are to be contained in the oxide film. Advantageously, the metal layer is deposited such that the various metal constituents (e.g., Y, Ba, and Cu) are substantially mixed. The inventive method simplifies deposition control since the densities of the metal deposits are well known and constant, and permits relatively rapid deposition (e.g., by DC sputtering) since the targets are not subject to oxidation. A multi-stage heat treatment process, with patterning of the oxide layer carried out at an intermediate stage of the process, that can result in improved pattern definition and can avoid deterioration of the oxide film as a consequence of the patterning, is also disclosed.

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