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    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N
    6.
    发明授权
    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权
    通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加

    公开(公告)号：US08772758B2

    公开(公告)日：2014-07-08

    申请号：US13470598

    申请日：2012-05-14

    Applicant: Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    Inventor： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC: H01L29/06

    CPC classification number: H01L21/0254 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513

    Abstract: A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.

    Abstract translation: 一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷 更多未掺杂的缓冲层。 掺杂可以减少或防止错配位错线的形成和额外的穿线位错。 缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。 此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。

    Key switch and keyboard
    10.
    发明授权
    Key switch and keyboard 有权
    钥匙开关和键盘

    公开(公告)号：US08624140B2

    公开(公告)日：2014-01-07

    申请号：US11822840

    申请日：2007-07-10

    Applicant: Takeshi Nishino ,  Junichi Maruyama ,  Shuji Nakamura

    Inventor： Takeshi Nishino ,  Junichi Maruyama ,  Shuji Nakamura

    IPC: H01H13/06

    CPC classification number: H01H3/122 ,  H01H13/702 ,  H01H2209/082 ,  H01H2219/014 ,  H01H2219/064 ,  H01H2221/07 ,  H01H2223/002

    Abstract: A key switch preferably used for a keyboard as an input device in electronic equipment. The key switch includes a base section; a key top disposed above the base section; a pair of link members interlocked to each other to support and direct the key top in a vertical direction relative to the base section; a switch member including a contact section capable of opening and closing in response to a vertical movement of the key top; and a biasing member capable of applying an elastic biasing force in a vertically upward direction to the key top. The key switch further includes a protection member disposed and inserted between the base section and the key top at a position where the protection member surrounds the pair of link members, the contact section and the biasing member. The protection member is elastically deformed to follow the vertical movement of the key top, and protects the pair of link members, the contact section and the biasing member from penetration of foreign matter.

    Abstract translation: 一种键盘开关，优选用于键盘作为电子设备中的输入装置。 钥匙开关包括基座部分; 位于基部上方的键顶; 一对连杆构件彼此互锁，以相对于基部在垂直方向上支撑和引导键顶; 开关构件，其包括响应于所述键顶的垂直移动而能够打开和关闭的接触部; 以及能够向键顶向垂直向上方向施加弹性偏压力的偏置构件。 钥匙开关还包括保护构件，该保护构件设置并插入在基部和键顶之间的保护构件围绕该对连杆构件，接触部分和偏置构件的位置处。 保护构件弹性变形以跟随键顶的垂直运动，并且保护一对连杆构件，接触部分和偏压构件不会渗透异物。

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