Invention Grant
US08835200B2 High light extraction efficiency nitride based light emitting diode by surface roughening
有权
高光提取效率氮化物基发光二极管通过表面粗糙化
- Patent Title: High light extraction efficiency nitride based light emitting diode by surface roughening
- Patent Title (中): 高光提取效率氮化物基发光二极管通过表面粗糙化
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Application No.: US13349342Application Date: 2012-01-12
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Publication No.: US08835200B2Publication Date: 2014-09-16
- Inventor: Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L21/02
Abstract:
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
Public/Granted literature
- US20120104412A1 HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING Public/Granted day:2012-05-03
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