Invention Grant
US08686397B2 Low droop light emitting diode structure on gallium nitride semipolar substrates
有权
氮化镓半极性衬底上的低垂直发光二极管结构
- Patent Title: Low droop light emitting diode structure on gallium nitride semipolar substrates
- Patent Title (中): 氮化镓半极性衬底上的低垂直发光二极管结构
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Application No.: US13493430Application Date: 2012-06-11
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Publication No.: US08686397B2Publication Date: 2014-04-01
- Inventor: Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
- Applicant: Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
Public/Granted literature
- US20120313076A1 LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES Public/Granted day:2012-12-13
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