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    Crystal growing apparatus
    3.
    发明申请
    Crystal growing apparatus 有权
    水晶生长装置

    公开(公告)号：US20080223288A1

    公开(公告)日：2008-09-18

    申请号：US12073904

    申请日：2008-03-11

    Applicant: Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    Inventor： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC: C30B9/12

    CPC classification number: C30B29/403 ,  C30B9/00 ,  C30B9/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    Abstract: An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

    Abstract translation: 本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。 钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。 液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置 用于控制填充其内部空间的氩（Ar）气体的状态。 因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na） ，和管道。

    Method for producing group III nitride semiconductor
    5.
    发明申请
    Method for producing group III nitride semiconductor 有权
    III族氮化物半导体的制造方法

    公开(公告)号：US20100247418A1

    公开(公告)日：2010-09-30

    申请号：US12662006

    申请日：2010-03-26

    Applicant: Takayuki Sato ,  Seiji Nagai ,  Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka

    Inventor： Takayuki Sato ,  Seiji Nagai ,  Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka

    IPC: C01B21/06

    CPC classification number: C30B9/12 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625

    Abstract: An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

    Abstract translation: 本发明的目的是通过Na通量法有效地添加Ge生产GaN。 在坩埚中，放置晶种衬底，使得衬底的一端保留在支撑基底上，由此籽晶衬底相对于坩埚的底表面保持倾斜，并且将镓固体和锗固体放置在 晶种基板与坩埚底面之间的空间。 然后，将钠固体置于晶种衬底上。 通过使用这种布置，当GaN晶体通过Na通量法在籽晶衬底上生长时，锗在形成钠 - 锗合金之前溶解在熔融镓中。 因此，GaN晶体可以有效地掺杂Ge。

    METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND REACTION VESSEL FOR USE IN SAME
    6.
    发明申请
    METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND REACTION VESSEL FOR USE IN SAME 有权
    第III组金属硝酸盐和反应容器的单晶生长方法

    公开(公告)号：US20120137961A1

    公开(公告)日：2012-06-07

    申请号：US13315871

    申请日：2011-12-09

    Applicant: Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

    Inventor： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

    IPC: C30B11/06

    CPC classification number: C30B29/403 ,  C30B9/10 ,  C30B35/002

    Abstract: Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

    Abstract translation: 属于III族的金属的氮化物单晶和助熔剂的材料包含在容纳在反应容器中的坩埚中，反应容器容纳在外容器中，外容器容纳在压力容器中， 向外容器供给含氮气氛，在坩埚中产生熔融物，生长属于III族的金属的氮化物单晶。 反应容器包括容纳坩埚和盖的主体。 主体包括具有配合面的侧壁和在配合面处的槽开口和底壁。 盖具有上板部，其包括用于主体的嵌合面的接触面和从上板部延伸并围绕所述侧壁的外侧的凸缘部。

    Method for growing single crystal of group III metal nitride and reaction vessel for use in same
    9.
    发明授权
    Method for growing single crystal of group III metal nitride and reaction vessel for use in same 有权
    用于生长III族金属氮化物的单晶的方法和用于其的反应容器

    公开(公告)号：US08568532B2

    公开(公告)日：2013-10-29

    申请号：US13315871

    申请日：2011-12-09

    Applicant: Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

    Inventor： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

    IPC: C30B19/06

    CPC classification number: C30B29/403 ,  C30B9/10 ,  C30B35/002

    Abstract: Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

    Abstract translation: 属于III族的金属的氮化物单晶和助熔剂的材料包含在容纳在反应容器中的坩埚中，反应容器容纳在外容器中，外容器容纳在压力容器中， 向外容器供给含氮气氛，在坩埚中产生熔融物，生长属于III族的金属的氮化物单晶。 反应容器包括容纳坩埚和盖的主体。 主体包括具有配合面的侧壁和在配合面处的槽开口和底壁。 盖具有上板部，其包括用于主体的嵌合面的接触面和从上板部延伸并围绕所述侧壁的外侧的凸缘部。

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