Abstract:
A method and apparatus for conditioning a polishing pad is provided. In one embodiment, a pad conditioning device for a substrate polishing process is provided. The pad conditioning device includes an optical device coupled to a portion of a polishing station adjacent a polishing pad, the optical device comprising a laser emitter adapted to emit a beam toward a polishing surface of the polishing pad, the beam having a wavelength range that is substantially non-reactive with a polishing fluid utilized in the polishing process, but is reactive with the polishing pad.
Abstract:
Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.
Abstract:
Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.
Abstract:
A polishing pad includes a guide plate, a compressible foam under layer disposed adjacent to a lower surface of the guide plate, and a plurality of polishing elements that extend in a first direction substantially normal to a plane defined by the guide plate and through the guide plate. The pad further includes an optical path along the first direction and which is defined by an aperture in the compressible foam under layer and the guide plate. The optical path includes a transparent window that extends above an upper surface of the guide plate but below tips of the polishing elements, the upper surface of the guide plate being opposite the lower surface thereof. An optional slurry distribution layer may be disposed on the upper surface of the guide plate, in which case the polishing elements extend through the slurry distribution layer and the transparent window extends beyond a top surface thereof.
Abstract:
A polishing pad conditioning apparatus includes a laser beam generating unit for providing a laser beam, a fluid delivery system for providing a fluid stream and a vacuum line for removing debris. The laser beam may directly impinge on a surface of a polishing pad thereby creating cutting action, while an atomized fluid stream provides cooling and pad debris along with fluid are removed thru the vacuum line. Alternatively, the laser beam may be combined with the atomized fluid stream in a region above the pad surface to substantially impart part of its energy to the fluid stream, generating high energy droplets which provide “cool” cutting action on the pad surface.
Abstract:
A polishing pad conditioning apparatus includes a laser beam generating unit along with a system to transmit or focus the beam. The unit is mounted on a conditioning arm, such that the laser beam may be directed perpendicular to the plane of the polishing pad, which is next to the polishing platen. The conditioning arm is capable of moving across the polishing table to scan the pad radius, allowing the laser to traverse the pad radius.
Abstract:
Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.
Abstract:
A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.
Abstract:
A method and composition for planarizing a substrate. The composition includes a pressure sensitive solution and one or more chemical agents for complexing with a metal or oxidized metal. The method for removal of a copper containing layer from a substrate surface, comprising applying a composition to a polishing media, the composition comprising a pressure sensitive solution, and one or more chemical agents for complexing with a metal or oxidized metal, and polishing the substrate surface with the polishing media.
Abstract:
Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.